US5318667A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for dry etching
Assignee: Renesas Electronics Corp
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Filing: 1993-03-18
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Granted: 1994-06-07
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Expires: 2013-03-18
Abstract
Abstract A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameter for controlling the first and second conditions are contemplated.
Inventors
- 👤 Takao Kumihashi
- 👤 Kazunori Tsujimoto
- 👤 Shinichi Tachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:05
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32192; H01J37/32431; H01J37/3244; H01J37/32449; H01J37/32798; H01J37/32816; H01J37/32834; H01J37/32917; H01J37/32935; H01J37/32972; H10P50/244; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3322; H01J2237/334; H01J2237/3343; Y; Y10; Y10S; Y10S438/00; Y10S438/913; Y10S438/978
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
62 words
A dry etching method, comprising the steps of: providing a sample in a vacuum chamber; supplying an etching gas to the vacuum chamber; etching a layer of the sample to form a mask pattern; and overetching the layer to remove etching resident; wherein the effective pumping speed of the vacuum chamber is higher during the overetching step than during the etching step.
Claim 2
Dependent Claim
62 words
A dry etching method, comprising the steps of: providing a sample in a vacuum chamber; supplying an etching gas to the vacuum chamber; etching a layer of the sample to form a mask pattern; and overetching the layer to remove etching resident; wherein the effective pumping speed of the vacuum chamber is higher during the overetching step than during the etching step.
Claim 3
Dependent Claim
60 words
A dry etching method, comprising the steps of: providing a sample in a vacuum chamber; supplying an etching gas to the vacuum chamber; etching the sample; and controlling at least one of the effective pumping speed of the vacuum chamber and the flow rate of the gas in accordance With the intensity of plasma emission produced in the vacuum chamber.
Claim 4
Dependent Claim
60 words
A dry etching method, comprising the steps of: providing a sample in a vacuum chamber; supplying an etching gas to the vacuum chamber; etching the sample; and controlling at least one of the effective pumping speed of the vacuum chamber and the flow rate of the gas in accordance With the intensity of plasma emission produced in the vacuum chamber.
Claim 5
Dependent Claim
102 words
A dry etching apparatus, comprising: a vacuum chamber having a gas inlet for introducing an etching gas into the vacuum chamber; a sample stage in the vacuum chamber for supporting a sample to be etched; means for measuring the intensity of plasma emission produced in the vacuum chamber; pumping first control means for controlling the effective pumping speed of the vacuum chamber; second control means for controlling the flow rate of the etching gas entering through the inlet; and third means for controlling at least one of the first and second means in accordance with a signal received from the measuring means.
Claim 6
Dependent Claim
102 words
A dry etching apparatus, comprising: a vacuum chamber having a gas inlet for introducing an etching gas into the vacuum chamber; a sample stage in the vacuum chamber for supporting a sample to be etched; means for measuring the intensity of plasma emission produced in the vacuum chamber; pumping first control means for controlling the effective pumping speed of the vacuum chamber; second control means for controlling the flow rate of the etching gas entering through the inlet; and third means for controlling at least one of the first and second means in accordance with a signal received from the measuring means.
Claim 7
Dependent Claim
97 words
A dry etching apparatus, comprising: a vacuum chamber having an inlet for introducing an etching gas into the vacuum chamber; a sample stage for supporting a sample to be etched in the vacuum chamber; means for measuring the area of an underlayer exposed by the etching gas; first control means for controlling the effective pumping speed of the vacuum chamber; second control means for controlling the flow rate of the etching gas; and third control means for controlling at least one of the first and second means in accordance with a signal received from the measuring means.
Claim 8
Dependent Claim
97 words
A dry etching apparatus, comprising: a vacuum chamber having an inlet for introducing an etching gas into the vacuum chamber; a sample stage for supporting a sample to be etched in the vacuum chamber; means for measuring the area of an underlayer exposed by the etching gas; first control means for controlling the effective pumping speed of the vacuum chamber; second control means for controlling the flow rate of the etching gas; and third control means for controlling at least one of the first and second means in accordance with a signal received from the measuring means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-06 | 1997-12-06 | 1998-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-06 | 2001-12-06 | 2002-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-06 | 2005-12-06 | 2006-06-07 | $7700.00 | Window Closed / Lapsed |