US5317194A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink
Assignee: Toshiba Corp
•
Filing: 1993-02-25
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Granted: 1994-05-31
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Expires: 2013-02-25
Abstract
Abstract The present invention relates to a semiconductor device sealed by a resin and, more particularly, to a semiconductor device for reducing a production cost and effectively radiating heat generated from a semiconductor element. For this reason, a silicon chip in which an insulating layer is formed between the surface of the silicon chip and a conductive layer is arranged between a heat sink and a semiconductor element. The silicon chip insulates the semiconductor element from the heat sink and transmits heat generated from the semiconductor element to the heat sink. The silicon chip can be manufactured in a line for manufacturing the semiconductor element, and the silicon chip can be assembled with the semiconductor element.
Inventors
- 👤 Shigeki Sako
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 23:51
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H10W72/00; H10W72/071; H10W72/073; H10W72/07351; H10W72/07352; H10W72/30; H10W72/321; H10W72/851; H10W72/874; H10W72/884
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
77 words
A semiconductor device comprising: a heat sink; a plurality of heat-radiating silicon chips arranged on said heat sink; and a plurality of semiconductor elements arranged on the heat-radiating silicon chips, respectively; the heat-radiating silicon chips each including a silicon layer having a surface, an electrically insulating layer, and an electrically conductive layer, the electrically insulating layer being formed on the surface of the silicon layer, and the electrically conductive layer being formed on the electrically insulating layer.
Claim 2
Dependent Claim
77 words
A semiconductor device comprising: a heat sink; a plurality of heat-radiating silicon chips arranged on said heat sink; and a plurality of semiconductor elements arranged on the heat-radiating silicon chips, respectively; the heat-radiating silicon chips each including a silicon layer having a surface, an electrically insulating layer, and an electrically conductive layer, the electrically insulating layer being formed on the surface of the silicon layer, and the electrically conductive layer being formed on the electrically insulating layer.
Claim 3
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein said silicon layer has a thickness of 0.4 to 0.13 mm.
Claim 4
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said electrically insulating layer is an oxide film.
Claim 5
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said electrically conductive layer is made of aluminum.
Claim 6
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said electrically conductive layer is made of gold.
Claim 7
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein said silicon chips and said semiconductor elements are sealed by resin except for a bottom surface of said heat sink.
Claim 8
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said semiconductor elements are power semiconductor elements.
Claim 9
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein a wire is bonded to said conductive layer.
Claim 10
Dependent Claim
106 words
A semiconductor device comprising: a heat sink; a plurality of heat-radiating silicon chips arranged on said heat sink; conductive pastes provided on the plurality of heat-radiating silicon chips; a plurality of semiconductor elements arranged on the conductive pastes, respectively; and a resin for sealing said silicon chips and said semiconductor elements except for a bottom surface of said heat sink; the heat-radiating silicon chips each including a silicon layer having a surface, an electrically insulating layer, and an electrically conductive layer, the electrically insulating layer being formed on the surface of the silicon layer, and the electrically conductive layer being formed on the electrically insulating layer.
Claim 11
Dependent Claim
106 words
A semiconductor device comprising: a heat sink; a plurality of heat-radiating silicon chips arranged on said heat sink; conductive pastes provided on the plurality of heat-radiating silicon chips; a plurality of semiconductor elements arranged on the conductive pastes, respectively; and a resin for sealing said silicon chips and said semiconductor elements except for a bottom surface of said heat sink; the heat-radiating silicon chips each including a silicon layer having a surface, an electrically insulating layer, and an electrically conductive layer, the electrically insulating layer being formed on the surface of the silicon layer, and the electrically conductive layer being formed on the electrically insulating layer.
Claim 12
Dependent Claim
134 words
A semiconductor device comprising: a heat sink; a plurality of heat-radiating silicon chips arranged on said heat sink, said heat-radiating silicon chips each including a silicon layer having a surface, an electrically insulating layer, and an electrically conductive layer, said electrically insulating layer being formed on the surface of the silicon layer, and said electrically conductive layer being formed on the insulating layer; a plurality of semiconductor elements having electrode with a bottom surface arranged on the heat-radiating silicon chips, respectively, the electrodes of the semiconductor elements being connected to the conductive layers of the heat-radiating silicon chips, respectively; a plurality of wires connected to said semiconductor elements and said conductive layers, respectively; and a resin for sealing said silicon chips and said semiconductor elements except for a bottom surface of said heat sink.
Claim 13
Dependent Claim
134 words
A semiconductor device comprising: a heat sink; a plurality of heat-radiating silicon chips arranged on said heat sink, said heat-radiating silicon chips each including a silicon layer having a surface, an electrically insulating layer, and an electrically conductive layer, said electrically insulating layer being formed on the surface of the silicon layer, and said electrically conductive layer being formed on the insulating layer; a plurality of semiconductor elements having electrode with a bottom surface arranged on the heat-radiating silicon chips, respectively, the electrodes of the semiconductor elements being connected to the conductive layers of the heat-radiating silicon chips, respectively; a plurality of wires connected to said semiconductor elements and said conductive layers, respectively; and a resin for sealing said silicon chips and said semiconductor elements except for a bottom surface of said heat sink.
Claim 14
Dependent Claim
91 words
A semiconductor device comprising: a heat sink; a plurality of heat-radiating silicon chips arranged on the heat sink; a plurality of power semiconductor elements having collectors with a bottom surface arranged on the heat-radiating silicon chips, respectively; the heat-radiating silicon chips each including a silicon layer having a surface, an electrically insulating layer, and an electrically conductive layer for connecting to collectors of the power semiconductor elements, the electrically insulating layer being formed on the surface of the silicon layer, and the electrically conductive layer being formed on the insulating layer.
Claim 15
Dependent Claim
91 words
A semiconductor device comprising: a heat sink; a plurality of heat-radiating silicon chips arranged on the heat sink; a plurality of power semiconductor elements having collectors with a bottom surface arranged on the heat-radiating silicon chips, respectively; the heat-radiating silicon chips each including a silicon layer having a surface, an electrically insulating layer, and an electrically conductive layer for connecting to collectors of the power semiconductor elements, the electrically insulating layer being formed on the surface of the silicon layer, and the electrically conductive layer being formed on the insulating layer.
Claim 16
Dependent Claim
19 words
A semiconductor device according to claim 11, wherein the silicon layer has a thickness of 0.4 to 0.13 mm.
Claim 17
Dependent Claim
15 words
A semiconductor device according to claim 11, wherein the insulating layer is an oxide film.
Claim 18
Dependent Claim
15 words
A semiconductor device according to claim 11, wherein the conductive layer is made of aluminium.
Claim 19
Dependent Claim
15 words
A semiconductor device according to claim 11, wherein the conductive layer is made of gold.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-30 | 1997-11-29 | 1998-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-30 | 2001-11-29 | 2002-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-30 | 2005-11-29 | 2006-05-31 | $7700.00 | Window Closed / Lapsed |