Patent US5316968A successfully refreshed from Google Patents.
US5316968A
Expired / Lapsed
US
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Method of making semiconductor surface emitting laser
Assignee: Nokia Bell Labs
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Filing: 1993-02-11
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Granted: 1994-05-31
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Expires: 2013-02-11
Abstract
Abstract The present applicant has discovered that one can make a surface emitting laser with enhanced operating characteristics by etching away the outer reflector stack peripheral to the intended active area and protecting the reflector stack mesa remaining over the active area by in situ metalization in high vacuum. The active area can be isolated, as by ion implantation, providing an electrical path through the active region free of the outer reflector stack. The result is a surface emitting laser having reduced series resistance. The device lases at lower voltage and provides an enhanced intensity of optical output as compared with conventional planar devices.
Inventors
- 👤 Kent D. Choquette
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:55
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18308; H01S5/04; H01S5/042; H01S5/0421; H01S5/20; H01S5/2054; H01S5/2059; H01S5/2063; Y; Y10; Y10S; Y10S438/00; Y10S438/913
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
95 words
A method for making a semiconductor device comprising an active region peripherally surrounded with metal comprising the steps of: providing a semiconductor substrate; growing on said substrate an active layer for forming said active region; growing a resistive layer overlying said active layer; etching away a portion of said resistive layer peripherally surrounding said active region in a reduced pressure environment thereby exposing a lateral edge of said resistive layer; and without exposing the etched substrate to atmosphere, covering with metal the etched surface of said substrate including said lateral edge of said resistive layer.
Claim 2
Independent Claim
95 words
A method for making a semiconductor device comprising an active region peripherally surrounded with metal comprising the steps of: providing a semiconductor substrate; growing on said substrate an active layer for forming said active region; growing a resistive layer overlying said active layer; etching away a portion of said resistive layer peripherally surrounding said active region in a reduced pressure environment thereby exposing a lateral edge of said resistive layer; and without exposing the etched substrate to atmosphere, covering with metal the etched surface of said substrate including said lateral edge of said resistive layer.
Claim 3
Dependent Claim
15 words
The method of claim 1, wherein said active region is a quantum well active region.
Claim 4
Dependent Claim
10 words
The method of claim 1, wherein said metal comprises gold.
Claim 5
Independent Claim
101 words
A method for making a semiconductor device comprising an active region peripherally surrounded with metal comprising the steps of: providing a semiconductor substrate; growing on said substrate an active layer for forming said active region; growing a resistive layer overlying said active layer; etching away a portion of said resistive layer peripherally surrounding said active region thereby exposing a lateral edge of said resistive layer; exposing the etched substrate to a gas plasma comprising hydrogen, and without exposing the plasma treated surface to atmosphere, covering with metal the etched surface of said substrate including said lateral edge of said resistive layer.
Claim 6
Independent Claim
101 words
A method for making a semiconductor device comprising an active region peripherally surrounded with metal comprising the steps of: providing a semiconductor substrate; growing on said substrate an active layer for forming said active region; growing a resistive layer overlying said active layer; etching away a portion of said resistive layer peripherally surrounding said active region thereby exposing a lateral edge of said resistive layer; exposing the etched substrate to a gas plasma comprising hydrogen, and without exposing the plasma treated surface to atmosphere, covering with metal the etched surface of said substrate including said lateral edge of said resistive layer.
Claim 7
Dependent Claim
15 words
The method of claim 4, wherein said active region is a quantum well active region.
Claim 8
Dependent Claim
10 words
The method of claim 4, wherein said metal comprises gold.
Claim 9
Independent Claim
101 words
A method of making a semiconductor vertical cavity surface emitting laser comprising the steps of: providing a semiconductor substrate; growing on said substrate a series of layers for forming an inner reflector stack, an active region, and an outer reflector stack; etching away portions of said outer reflector stack peripheral to said active region in a reduced pressure environment thereby exposing a lateral edge of said outer reflector stack; without exposing the etched substrate to atmosphere, depositing a layer of metal over the etched surface including said lateral edge of said outer reflector stack; and removing metal over the active region.
Claim 10
Independent Claim
101 words
A method of making a semiconductor vertical cavity surface emitting laser comprising the steps of: providing a semiconductor substrate; growing on said substrate a series of layers for forming an inner reflector stack, an active region, and an outer reflector stack; etching away portions of said outer reflector stack peripheral to said active region in a reduced pressure environment thereby exposing a lateral edge of said outer reflector stack; without exposing the etched substrate to atmosphere, depositing a layer of metal over the etched surface including said lateral edge of said outer reflector stack; and removing metal over the active region.
Claim 11
Dependent Claim
34 words
The method of claim 7, wherein said substrate comprises gallium arsenide, said reflector stacks comprise aluminum gallium arsenide, said active region comprises gallium arsenide, said mask comprises silicon dioxide and said metal comprises gold.
Claim 12
Independent Claim
105 words
A method of making a semiconductor vertical cavity surface emitting laser comprising the steps of: providing a semiconductor substrate; growing on said substrate a series of layers for forming an inner reflector stack, an active region, and an outer reflector stack; etching away portions of said outer reflector stack peripheral to said active region thereby exposing a lateral edge of said outer reflector stack; exposing the etched substrate to a gas plasma comprising hydrogen in a reduced pressure environment, and without exposing the etched substrate to atmosphere, covering with metal the etched surface of said substrate, including said lateral edge of said outer reflector stack.
Claim 13
Independent Claim
105 words
A method of making a semiconductor vertical cavity surface emitting laser comprising the steps of: providing a semiconductor substrate; growing on said substrate a series of layers for forming an inner reflector stack, an active region, and an outer reflector stack; etching away portions of said outer reflector stack peripheral to said active region thereby exposing a lateral edge of said outer reflector stack; exposing the etched substrate to a gas plasma comprising hydrogen in a reduced pressure environment, and without exposing the etched substrate to atmosphere, covering with metal the etched surface of said substrate, including said lateral edge of said outer reflector stack.
Claim 14
Dependent Claim
34 words
The method of claim 9, wherein said substrate comprises gallium arsenide, said reflector stacks comprise aluminum gallium arsenide, said active region comprises gallium arsenide, said mask comprises silicon dioxide and said metal comprises gold.
References Cited (Backward Citations)
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