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US5316511A
Expired / Lapsed
US
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Method for making a silicon field emission device
Assignee: Samsung SDI Co Ltd
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Filing: 1993-03-02
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Granted: 1994-05-31
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Expires: 2013-03-02
Abstract
Abstract This invention discloses a method for making a silicon field emission device which ensures in the higher electron emission effect at the same voltage required for field emission by shrinking the diameter of a gate aperture to make the field emission structure sharp. The shrinkage effect of the gate aperture of about 42-45% may be achieved in accordance with this invention.
Inventors
- 👤 Kangok Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:19
CPC Classifications
H; H01; H01J; H01J31/00; H01J31/08; H01J31/10; H01J31/12; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J2209/00; H01J2209/02; H01J2209/022; H01J2209/0223; H01J2209/0226
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
137 words
A method for making a silicon field emission device comprising the steps of: forming thermal oxide masks by photo-etching after thermal oxidation of a high density silicon substrate; carrying out reactive ion etching on said silicon substrate to form conical emitters by means of said thermal oxide masks; carrying out a thermal oxidation process to form said plane emitters to have sharp tips; forming insulating films self-aligned through said masks; carrying out a densification process at a high temperature to shrink each thickness of said masks and insulating films in the vertical and horizontal directions; forming gate electrodes to enclose one part of said insulating films by depositing a gate metal layer on said insulating films having the thickness shrank through said process sequence; and carrying out lift-off to remove simultaneously said upper layers including said mask.
Claim 2
Independent Claim
137 words
A method for making a silicon field emission device comprising the steps of: forming thermal oxide masks by photo-etching after thermal oxidation of a high density silicon substrate; carrying out reactive ion etching on said silicon substrate to form conical emitters by means of said thermal oxide masks; carrying out a thermal oxidation process to form said plane emitters to have sharp tips; forming insulating films self-aligned through said masks; carrying out a densification process at a high temperature to shrink each thickness of said masks and insulating films in the vertical and horizontal directions; forming gate electrodes to enclose one part of said insulating films by depositing a gate metal layer on said insulating films having the thickness shrank through said process sequence; and carrying out lift-off to remove simultaneously said upper layers including said mask.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-30 | 1997-11-29 | 1998-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-30 | 2001-11-29 | 2002-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-30 | 2005-11-29 | 2006-05-31 | $7700.00 | Window Closed / Lapsed |