Vertical boat used for heat treatment of semiconductor wafer and vertical heat treatment apparatus

Claim 2

A vertical boat used for heat-treating a plurality of semiconductor wafers each having a main region to be processed on the upper surface, at the same time, comprising: an upper support plate; a lower support plate; a plurality of columns, an upper end of each of which is fixed to the upper support plate, and a lower end of each of which is fixed to the lower support plate, each of said columns having a plurality of first steps formed in the vertical direction with intervals therebetween so as to support the wafers substantially parallel to each other, and a plurality of second steps formed so as to be arranged alternately with the first steps; and a plurality of plate rings, each having an outer diameter larger than that of the wafers, and an inner diameter defining an opening for exposing substantially the entire main region of each wafer, and provided on the second steps, said rings serving to improve a uniformity of a heat treatment carried out on each wafer; wherein each first step is arranged such that one of the wafers supported thereon is positioned apart from lower and upper rings of the plate rings adjacent to said one of the wafers with first and second clearances formed therebetween, respectively, in the vertical direction so as not to contact the lower and upper rings, the first clearance having a dimension to allow transfer means for transferring said one of the wafers to be inserted therein and the second clearance having a dimension to allow the transfer means to lift said one of the wafers.

Claim 3

The boat according to claim 1, wherein the first steps are arranged at regular intervals.

Claim 4

The boat according to claim 2, wherein the second steps are arranged at regular intervals.

Claim 5

The boat according to claim 3, wherein the ring has a thickness of less than tree times as much as that of the wafer.

Claim 6

The boat according to claim 4, wherein each of the column has a horizontal cross section of an elliptic shape, which has a longitudinal axis extending in a radial direction of the ring.

Claim 7

The boat according to claim 4, wherein a notch for positioning is formed in a periphery section of the ring, and a positioning step which is engaged with the notch is formed in each of the second steps of one of the columns.

Claim 8

The boat according to claim 4, wherein the width of the ring is 10-30 mm.

Claim 9

The boat according to claim 4, wherein the columns and the rings are made of quartz.

Claim 10

The apparatus according to claim 4, wherein each of the column has a horizontal cross section of an elliptic shape, which has a longitudinal axis extending in a radial direction of the ring.

Claim 11

The apparatus according to claim 4, wherein a notch for positioning is formed in a periphery section of the ring, and a positioning step which is engaged with the notch is formed in each of the second steps of one of the columns.

Claim 12

The boat according to claim 1, wherein the second steps comprise grooves formed in the columns.

Claim 13

A vertical heat treatment apparatus used for heat-treating a plurality of semiconductor wafers each having a main region to be processed on the upper surface, at the same time, comprising; a) a process chamber; b) a heater for heating the process chamber; c) gas supply means for supplying process gas in the process chamber; d) exhaustion means for exhausting the process chamber; and e) a vertical boat for supporting the wafers in the process chamber, and comprising: an upper support plate; a lower support plate; a plurality of columns, an upper end of each of which is fixed to the upper support plate, and a lower end of each of which is fixed to the lower support plate, each of said columns having a plurality of first steps formed in the vertical direction with intervals therebetween so as to support the wafers substantially parallel to each other, and a plurality of second steps formed so as to be arranged alternately with the first steps; and a plurality of plate rings, each having an outer diameter larger than that of the wafers, and an inner diameter defining an opening for exposing substantially the entire main region of each wafer, and provided on the second steps, said rings serving to improve a uniformity of a heat treatment carried out on each wafer; wherein each first step is arranged such that one of the wafers supported thereon is positioned apart from lower and upper rings of the plate rings adjacent to said one of the wafers with first and second clearances formed therebetween, respectively, in the vertical direction so as not to contact the lower and upper rings, the first clearance having a dimension to allow transfer means for transferring said one of the wafers to be inserted therein and the second clearance having a dimension to allow the transfer means to lift said one of the wafers.

Claim 14

A vertical heat treatment apparatus used for heat-treating a plurality of semiconductor wafers each having a main region to be processed on the upper surface, at the same time, comprising; a) a process chamber; b) a heater for heating the process chamber; c) gas supply means for supplying process gas in the process chamber; d) exhaustion means for exhausting the process chamber; and e) a vertical boat for supporting the wafers in the process chamber, and comprising: an upper support plate; a lower support plate; a plurality of columns, an upper end of each of which is fixed to the upper support plate, and a lower end of each of which is fixed to the lower support plate, each of said columns having a plurality of first steps formed in the vertical direction with intervals therebetween so as to support the wafers substantially parallel to each other, and a plurality of second steps formed so as to be arranged alternately with the first steps; and a plurality of plate rings, each having an outer diameter larger than that of the wafers, and an inner diameter defining an opening for exposing substantially the entire main region of each wafer, and provided on the second steps, said rings serving to improve a uniformity of a heat treatment carried out on each wafer; wherein each first step is arranged such that one of the wafers supported thereon is positioned apart from lower and upper rings of the plate rings adjacent to said one of the wafers with first and second clearances formed therebetween, respectively, in the vertical direction so as not to contact the lower and upper rings, the first clearance having a dimension to allow transfer means for transferring said one of the wafers to be inserted therein and the second clearance having a dimension to allow the transfer means to lift said one of the wafers.

Claim 15

The apparatus according to claim 12, wherein the first steps are arranged at regular intervals, and the second steps are arranged at regular intervals.

Claim 16

The apparatus according to claim 13, wherein the ring has a thickness of less than three times as much as that of the wafer.

Claim 17

The apparatus according to claim 12, wherein the second steps comprise grooves formed in the columns.

Claim 18

The apparatus according to claim 14, wherein the gas supply means further includes means for supplying a gas for forming a film on the wafers by a CVD method.

Claim 19

A CVD apparatus used for treating a plurality of semiconductor wafers each having a main region to be processed on the upper surface, at the same time, comprising: a) a process chamber; b) a heater for heating the process chamber; c) gas supply means for supplying process gas in the process chamber; d) exhaustion means for exhausting the process chamber; e) a vertical boat for supporting the wafers in the process chamber, and comprising: an upper support plate; a lower support plate; a plurality of columns, an upper end of each of which is fixed to the upper support plate, and a lower end of each of which is fixed to the lower support plate, each of said columns having a plurality of first steps formed in the vertical direction at regular intervals therebetween so as to support the wafers substantially parallel to each other, and a plurality of second steps formed at regular intervals so as to be arranged alternately with the first steps; and a plurality of plate rings, each having an outer diameter larger than that of the wafers, and an inner diameter defining an opening for exposing substantially the entire main region of each wafer, and provided on the second steps, said rings serving to improve a uniformity of thickness of a film to be formed on each wafer; wherein each first step is arranged such that one of the wafers supported thereon is positioned apart from lower and upper rings of the plate rings adjacent to said one of the wafers with first and second clearances formed therebetween, respectively, in the vertical direction so as not to contact the lower and upper rings, the first clearance having a dimension to allow transfer mans for transferring said one of the wafers to be inserted therein and the second clearance having a dimension to allow the transfer means to lift said one of the wafers; f) an elevator located below the process chamber, said elevator lifting/lowering the boat in which the wafers are set between a first position where the boat is loaded in the process chamber, and a second position where the boat is unloaded from the process chamber; g) transfer means for transferring the wafers to/from the boat located outside the process chamber; and h) a wafer cassette, to/from which the wafers are transferred from/to the boat by the transfer means

Claim 20

A CVD apparatus used for treating a plurality of semiconductor wafers each having a main region to be processed on the upper surface, at the same time, comprising: a) a process chamber; b) a heater for heating the process chamber; c) gas supply means for supplying process gas in the process chamber; d) exhaustion means for exhausting the process chamber; e) a vertical boat for supporting the wafers in the process chamber, and comprising: an upper support plate; a lower support plate; a plurality of columns, an upper end of each of which is fixed to the upper support plate, and a lower end of each of which is fixed to the lower support plate, each of said columns having a plurality of first steps formed in the vertical direction at regular intervals therebetween so as to support the wafers substantially parallel to each other, and a plurality of second steps formed at regular intervals so as to be arranged alternately with the first steps; and a plurality of plate rings, each having an outer diameter larger than that of the wafers, and an inner diameter defining an opening for exposing substantially the entire main region of each wafer, and provided on the second steps, said rings serving to improve a uniformity of thickness of a film to be formed on each wafer; wherein each first step is arranged such that one of the wafers supported thereon is positioned apart from lower and upper rings of the plate rings adjacent to said one of the wafers with first and second clearances formed therebetween, respectively, in the vertical direction so as not to contact the lower and upper rings, the first clearance having a dimension to allow transfer mans for transferring said one of the wafers to be inserted therein and the second clearance having a dimension to allow the transfer means to lift said one of the wafers; f) an elevator located below the process chamber, said elevator lifting/lowering the boat in which the wafers are set between a first position where the boat is loaded in the process chamber, and a second position where the boat is unloaded from the process chamber; g) transfer means for transferring the wafers to/from the boat located outside the process chamber; and h) a wafer cassette, to/from which the wafers are transferred from/to the boat by the transfer means

Claim 21

The apparatus apparatus according to claim 17, wherein the transfer means includes a plurality of arms for transferring the plurality of wafers all at once to/from the boat.

Claim 22

The apparatus according to claim 18, wherein the transfer means further includes means for changing an interval of the arms when the wafers are transferred between the wafer cassette and the boat.

Claim 23

The apparatus according to claim 19, wherein the ring has a thickness of less than three times as much as that of the wafer.

Claim 24

The apparatus according to claim 20, wherein each of the column has a horizontal cross section of an elliptic shape, which has a longitudinal axis extending in a radial direction of the ring.

Claim 25

The apparatus according to claim 20, wherein a notch for positioning is formed in a periphery section of the ring, and a positioning step which is engaged with the notch is formed in each of the second steps of one of the columns.

Claim 26

The apparatus according to claim 17, wherein the second steps comprise grooves formed in the columns.

Claim 27

The apparatus according to claim 17, further comprising moving means provided on the elevator, for moving the boat from the second position to a third position, where the wafers are transferred to/from the boat.