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US5315282A
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Magnetoresistance effect element
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1991-05-20
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Granted: 1994-05-24
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Expires: 2011-05-20
Abstract
Abstract PCT No. PCT/JP91/00671 Sec. 371 Date Jan. 21, 1992 Sec. 102(e) Date Jan. 21, 1992 PCT Filed May 20, 1991 PCT Pub. No. WO91/18424 PCT Pub. Date Nov. 28, 1991.A magnetoresistance effect element including a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces and each of the magnetic thin layers and the non-magnetic layer has a thickness of not larger than 200 ANGSTROM , which has a large magnetoresistance ratio of several % to several ten % at a small external magnetic field of several Oe to several ten Oe and can provide a MR sensor having a high sensitivity and a MR head which achieves high density magnetic recording.
Inventors
- 👤 Teruya Shinjo
- 👤 Hidefumi Yamamoto
- 👤 Toshio Takada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 15:52
CPC Classifications
B; B82; B82Y; B82Y10/00; B82Y25/00; G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; H; H10; H10N; H10N50/00; H10N50/10; G11B2005/3996
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
73 words
A magnetoresistance effect element having a multilayer structure of the following layers: [(a layer of an alloy comprising Ni and Fe)/(a layer of Cu or its alloy)/ (a layer of Co or its alloy)/(Cu or its alloy)] n wherein n is the number of the above multilayer structure and is an integer from 3 to 15, and a thickness of the layer of Cu or its alloy is from 30 to 55 Å.
Claim 2
Dependent Claim
73 words
A magnetoresistance effect element having a multilayer structure of the following layers: [(a layer of an alloy comprising Ni and Fe)/(a layer of Cu or its alloy)/ (a layer of Co or its alloy)/(Cu or its alloy)] n wherein n is the number of the above multilayer structure and is an integer from 3 to 15, and a thickness of the layer of Cu or its alloy is from 30 to 55 Å.
Claim 3
Dependent Claim
77 words
The magnetoresistance effect element according to claim 1 having the composition [Ni 0 .8 Fe 0 .2 (25)/Cu(55)/Co(25)/Cu(55)] 3 [Ni 0 .8 Fe 0 .2 (25)/Cu(55)/Co(25)/Cu(55)] 5 [Ni 0 .8 Fe 0 .2 (25)/Cu(55)/Co(25)/Cu(55)] 7 [Ni 0 .8 Fe 0 .2 (25)/Cu(55)/Co(25)/Cu(55)] 10 [Ni 0 .8 Fe 0 .2 (25)/Cu(55)/Co(25)/Cu(55)] 15 or [Ni 0 .8 Fe 0 .15 Mo 0 .05 (25)/Cu(55)/Co(25)/Cu(55)] 5 , the numbers in parentheses representing the thickness in Å of the respective layers.
Claim 4
Dependent Claim
44 words
The magnetoresistance effect element according to claim 1, wherein said magnetic thin layer is formed from at least one magnetic substance selected from the group consisting of Fe, Ni, Co, Mn, Cr, Dy, Er, Nd, Tb, Tm, Ce, Gd and their alloys and compounds.
Claim 5
Dependent Claim
43 words
The magnetoresistance effect element according to claim 2, wherein said Y, or compound is selected from the group consisting of Fe--Si, Fe--Ni, Fe--Co, Fe--Gd, Fe--Al--Si, Fe--Y, Fe--Mn, Cr--Sb, Co base amorphous alloys, Co--Pt, Fe--Al, Fe--C, Mn--Sb, Ni--Mn, Co--O, Ni--O, Fe--O, Ni--F and ferrites.
Claim 6
Dependent Claim
24 words
The magnetoresistance effect element according to claim 1, wherein each of said magnetic thin layers has a thickness of not larger than 200 Å.
Claim 7
Dependent Claim
23 words
The magnetoresistance effect element according to claim 4, wherein a thickness of each of said magnetic thin layers is at least 4 Å.
Claim 8
Dependent Claim
49 words
The magnetoresistance effect element according to claim 1, wherein said non-magnetic thin layer is formed from at least one metallic non-magnetic material selected from the group consisting of Au, Ag, Cu, Pt, Al, Mg, Mo, Zn, Nb, Ta, V, Hf, Sb, Zr, Ga, Ti, Sn, Pb and their alloys.
Claim 9
Dependent Claim
46 words
The magnetoresistance effect element according to claim 1, wherein said non-magnetic thin layer is formed from at least one semimetallic non-magnetic material selected from the group consisting of Si, Ge, C, B and a composite material of at least one of these element and other element.
Claim 10
Dependent Claim
55 words
The magnetoresistance effect element according to claim 1, wherein said non-magnetic thin layer is formed from at least one non-metallic non-magnetic material selected from the group consisting of SiO 2 , SiO, SiN, Al 2 O 3 , ZnO, MgO, TiN and a composite material of at least one of these materials and other element.
Claim 11
Dependent Claim
22 words
The magnetoresistance effect element according to claim 1, wherein said non-magnetic thin layer has a thickness of not larger than 200 Å.
Claim 12
Dependent Claim
21 words
The magnetoresistance effect element according to claim 9, wherein a thickness of said non-magnetic thin layer is at least 4 Å.
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| 3.5 Years (Year 4) | 1997-05-23 | 1997-11-22 | 1998-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-23 | 2001-11-22 | 2002-05-24 | $3760.00 | Window Closed / Lapsed |
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