US5315129A
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Organic optoelectronic devices and methods
Assignee: University of Southern California
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Filing: 1991-05-01
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Granted: 1994-05-24
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Expires: 2011-05-01
Abstract
Abstract Organic optoelectronic devices, such as a modulator (54) and a photodetector (73) comprising alternating layers (58) of two crystalline planar organic aromatic semiconductors (60 and 62), have been grown by organic molecular beam deposition. These organic substances have been deposited in ultra-thin layers only 10 Å in depth using organic molecular beam deposition methods. Due to the anisotropic character of these organic materials,, the devices formed using these methods possess unique electronic and optical properties. The preferred embodiment of the invention utilizes 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and 3,4,7,8-naphthalenetetracarboxylic dianhydride (NTCDA). While the inventors have identified PTCDA and NTCDA as excellent materials for the manufacture of organic optoelectronic IC devices, the broad scope of the present invention encompasses the use of any planar organic aromatic semiconductor which readily forms a crystalline structure. The preferred method of the invention employs a chamber (23) containing an inorganic substrate (32) with appropriate material for making electrical contact to the organic structures and sources of PTCDA (36) and NTCDA (38). The chamber (23) is maintained at a pressure which is generally less than 10.sup. -6 Torr. The substrate (32) is separated from the source materials by a minimum separation distance of 10 cm. The substrate (32) is held below 150K while the PTCDA and NTCDA are alternately heated. The methods described above may also be employed to fabricate an organic phototransistor/photodetector (78).
Inventors
- 👤 Stephen R. Forrest
- 👤 Franky F. So
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:57
CPC Classifications
B; B82; B82Y; B82Y20/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/017; H; H10; H10D; H10D10/00; H10D10/80; H10D10/821; H10D10/891; H10K; H10K10/00; H10K10/20; H10K10/23; H10K10/40; H10K10/43; H10K10/46; H10K85/00; H10K85/60; H10K85/615; H10K85/621; G02F2202/00; G02F2202/02; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/549; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
220 words
An optoelectronic device formed by a process comprising the steps of: (a) providing a chamber (23) having an interior (24); (b) placing a substrate (32) in said chamber (23); (c) maintaining said interior (24) of said chamber (23) at a pressure less than about 10 -6 Torr; (d) placing a first source material (36) in said chamber (23), said first source material (36) being a planar crystalline organic aromatic semiconductor and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; (e) placing a second source material (38) in said chamber (23), said second source material (38) being a planar crystalline organic aromatic semiconductor, said second source material (38) having a generally different chemical composition from said first source material (36) and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; (f) depositing a layer of said first source material (36) on top of said substrate (32) by heating said first source material (36); (g) depositing a layer of said second source material (38) on top of said first source material (38) by heating said second source material (38); and (h) maintaining said substrate (32) at a temperature during deposition sufficient to provide good morphology, sharp interfaces between layers, and single crystalline layers of said first and second materials.
Claim 2
Dependent Claim
220 words
An optoelectronic device formed by a process comprising the steps of: (a) providing a chamber (23) having an interior (24); (b) placing a substrate (32) in said chamber (23); (c) maintaining said interior (24) of said chamber (23) at a pressure less than about 10 -6 Torr; (d) placing a first source material (36) in said chamber (23), said first source material (36) being a planar crystalline organic aromatic semiconductor and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; (e) placing a second source material (38) in said chamber (23), said second source material (38) being a planar crystalline organic aromatic semiconductor, said second source material (38) having a generally different chemical composition from said first source material (36) and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; (f) depositing a layer of said first source material (36) on top of said substrate (32) by heating said first source material (36); (g) depositing a layer of said second source material (38) on top of said first source material (38) by heating said second source material (38); and (h) maintaining said substrate (32) at a temperature during deposition sufficient to provide good morphology, sharp interfaces between layers, and single crystalline layers of said first and second materials.
Claim 3
Dependent Claim
123 words
A quasi-epitaxial optoelectronic device comprising: (a) a substrate (32); (b) a first layer (60) deposited on top of said substrate (32), said first layer (60) comprising a planar crystalline organic aromatic semiconductor and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; and (c) a second layer (62) deposited on top of said first layer (60), said second layer (62) comprising a planar crystalline organic aromatic semiconductor, said second layer (62) having a generally different chemical composition than said first layer (60) and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, said first (60) and second (62) layers having crystal structures in an ordered relationship with respect to each other.
Claim 4
Dependent Claim
123 words
A quasi-epitaxial optoelectronic device comprising: (a) a substrate (32); (b) a first layer (60) deposited on top of said substrate (32), said first layer (60) comprising a planar crystalline organic aromatic semiconductor and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; and (c) a second layer (62) deposited on top of said first layer (60), said second layer (62) comprising a planar crystalline organic aromatic semiconductor, said second layer (62) having a generally different chemical composition than said first layer (60) and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, said first (60) and second (62) layers having crystal structures in an ordered relationship with respect to each other.
Claim 5
Dependent Claim
26 words
The device as recited in claim 2, in which said substrate (32) comprises a material selected from the group consisting of glass and an inorganic semiconductor.
Claim 6
Dependent Claim
30 words
The device as recited in claim 3, in which said substrate (32) comprises an inorganic semiconductor selected from the group consisting of silicon, gallium arsenide, indium phosphide, and cadmium telluride.
Claim 7
Dependent Claim
32 words
The device as recited in claim 2, in which said first and second layers are independently selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole, and oxadiazole derivative.
Claim 8
Dependent Claim
26 words
The device as recited in claim 5, in which said first layer (60) comprises 3,4,9,10-perylenetetracarboxylic dianhydride and in which said second layer (62) comprises 3,4,7,8-naphthalenetetracarboxylic dianhydride.
Claim 9
Dependent Claim
170 words
An organic multiple quantum well light modulator (54) comrpising: (a) a substrate layer (56); (b) a plurality of alternating layers (58) of a first (60) and a second (62) planar crystalline organic aromatic semiconductor material, said second (62) planar crystalline organic aromatic semiconductor material having a generally different chemical composition than said first (60) planar crystalline organic aromatic semiconductor material, said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; (c) said plurality of alternating layers (58) of said first (60) and said second (62) planar crystalline organic aromatic semiconductor materials located on top of said substrate layer (56); (d) an additional layer (64) of said first (60) planar crystalline organic aromatic semiconductor material located on top of said plurality of alternating layers (58); (e) a cap layer (66) disposed to collect photons (71); (f) a ground lead (68) connected to said substrate layer (56); and (g) a voltage lead (70) connected to said cap layer (66).
Claim 10
Dependent Claim
170 words
An organic multiple quantum well light modulator (54) comrpising: (a) a substrate layer (56); (b) a plurality of alternating layers (58) of a first (60) and a second (62) planar crystalline organic aromatic semiconductor material, said second (62) planar crystalline organic aromatic semiconductor material having a generally different chemical composition than said first (60) planar crystalline organic aromatic semiconductor material, said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; (c) said plurality of alternating layers (58) of said first (60) and said second (62) planar crystalline organic aromatic semiconductor materials located on top of said substrate layer (56); (d) an additional layer (64) of said first (60) planar crystalline organic aromatic semiconductor material located on top of said plurality of alternating layers (58); (e) a cap layer (66) disposed to collect photons (71); (f) a ground lead (68) connected to said substrate layer (56); and (g) a voltage lead (70) connected to said cap layer (66).
Claim 11
Dependent Claim
16 words
The modulator as recited in claim 7, in which said substrate layer (56) comprises a conductor.
Claim 12
Dependent Claim
15 words
The modulator as recited in claim 8, in which said substrate layer (56) comprises gold.
Claim 13
Dependent Claim
16 words
The modulator as recited in claim 7, in which said substrate layer (56) comprises an insulator.
Claim 14
Dependent Claim
16 words
The modulator as recited in claim 7, in which said cap layer (66) comprises a conductor.
Claim 15
Dependent Claim
15 words
The modulator as recited in claim 11, in which said cap layer (66) comprises gold.
Claim 16
Dependent Claim
16 words
The modulator as recited in claim 7, in which said cap layer (66) comprises an insulator.
Claim 17
Dependent Claim
32 words
The modulator as recited in claim 7, in which said first and second layers are independently selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole, and oxadiazole derivative.
Claim 18
Dependent Claim
26 words
The modulator as recited in claim 14, in which said first layer (60) comprises 3,4,9,10-perylenetetracarboxylic dianhydride and in which said second layer (62) comprises 3,4,7,8-naphthalenetetracarboxylic dianhydride.
Claim 19
Dependent Claim
176 words
An organic multiple quantum well photodetector (73) comprising: (a) a substrate layer (74); (b) a plurality of alternating layers (58) of a first (60) and a second (62) planar crystalline organic aromatic semiconductor materials, said second (62) planar organic aromatic semiconductor material having a generally different chemical composition than said first (60) planar organic aromatic semiconductor material, said plurality of alternating layers (58) of said first (60) and said second (62) organic aromatic semiconductor materials located on top of said substrate layer (74), said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; (c) an additional layer (64) of said first (60) planar organic aromatic semiconductor material located on top of said plurality of alternating layers (58); (d) a cap layer (78) disposed to collect photons (71); said cap layer (78) being formed from a tin indium oxide (ITO) material; (e) a ground lead (68) connected to said substrate layer (74); and (f) a voltage lead (70) connected to said cap layer (78).
Claim 20
Dependent Claim
176 words
An organic multiple quantum well photodetector (73) comprising: (a) a substrate layer (74); (b) a plurality of alternating layers (58) of a first (60) and a second (62) planar crystalline organic aromatic semiconductor materials, said second (62) planar organic aromatic semiconductor material having a generally different chemical composition than said first (60) planar organic aromatic semiconductor material, said plurality of alternating layers (58) of said first (60) and said second (62) organic aromatic semiconductor materials located on top of said substrate layer (74), said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; (c) an additional layer (64) of said first (60) planar organic aromatic semiconductor material located on top of said plurality of alternating layers (58); (d) a cap layer (78) disposed to collect photons (71); said cap layer (78) being formed from a tin indium oxide (ITO) material; (e) a ground lead (68) connected to said substrate layer (74); and (f) a voltage lead (70) connected to said cap layer (78).
Claim 21
Dependent Claim
16 words
The photodetector as recited in claim 16, in which said substrate layer (74) comprises a conductor.
Claim 22
Dependent Claim
15 words
The photodetector as recited in claim 17, in which said substrate layer (74) comprises gold.
Claim 23
Dependent Claim
16 words
The photodetector as recited in claim 16, in which said substrate layer (74) comprises an insulator.
Claim 24
Dependent Claim
32 words
The photodetector as recited in claim 16, in which said first and second layers are independently selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole, and oxadiazole derivative.
Claim 25
Dependent Claim
26 words
The photodetector as recited in claim 20, in which said first layer (60) comprises 3,4,9,10-perylenetetracarboxylic dianhydride and in which said second layer (62) comprises 3,4,7,8-naphthalenetetracarboxylic dianhydride.
Claim 26
Dependent Claim
66 words
A bipolar transistor formed on a substrate (80, 80') and comprising three layers (84, 86, 88, 84', 86', 88') of semiconductor material, at least one of which layers comprises a planar crystalline organic aromatic semiconductor material selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, with appropriate contacts (82, 90, 82', 89, 90') made to at least two layers thereof.
Claim 27
Dependent Claim
66 words
A bipolar transistor formed on a substrate (80, 80') and comprising three layers (84, 86, 88, 84', 86', 88') of semiconductor material, at least one of which layers comprises a planar crystalline organic aromatic semiconductor material selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, with appropriate contacts (82, 90, 82', 89, 90') made to at least two layers thereof.
Claim 28
Dependent Claim
24 words
The transistor as recited in claim 22, in which said substrate comprises a material selected from the group consisting of glass and inorganic semiconductors.
Claim 29
Dependent Claim
30 words
The transistor as recited in claim 23 in which said substrate comprises an inorganic semiconductor material selected from the group consisting of silicon, gallium arsenide, indium phosphide, and cadmium telluride.
Claim 30
Dependent Claim
32 words
The transistor as recited in claim 22, in which said planar crystalline organic semiconductor material is selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole, and oxadiazole derivative.
Claim 31
Dependent Claim
94 words
The transistor (78) of claim 22 comprising three organic semiconductor layers, with an inner layer (86) comprising a first planar crystalline organic aromatic semiconductor, said one layer sandwiched between two outer layers (84, 88) each comprising a second planar crystalline organic aromatic semiconductor, one of which organic semiconductors conducts holes and the other of which organic semiconductors conducts electrons, said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, with contacts (82, 90) formed to at least said two outer layers.
Claim 32
Dependent Claim
42 words
The transistor of claim 26 wherein said substrate comprises a transparent material, wherein one of said outer layers (84) is formed over said substrate, and wherein a transparent conductor (82) is interposed between said substrate and said one of said outer layers.
Claim 33
Dependent Claim
24 words
The transistor of claim 26 wherein said hole-conducting semiconductor is selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, and 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole.
Claim 34
Dependent Claim
14 words
The transistor of claim 26 wherein said electron-conducting semiconductor consists essentially of oxadiazole derivative.
Claim 35
Dependent Claim
98 words
The transistor of claim 22 comprising a collector layer (84') of a first conductivity type and a base layer (86') formed thereon of a second conductivity type, said collector and base layers consisting essentially of an inorganic semiconductor material and further comprising an emitter layer (88') formed on said base layer, said emitter layer consisting essentially of said first planar crystalline organic aromatic semiconductor, said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, with separate contacts (82', 89, 90') formed to each semiconductor layer.
Claim 36
Dependent Claim
29 words
The transistor of claim 30 wherein said inorganic semiconductor materials comprising said base and collector layers are selected from the group consisting of indium phosphide, gallium arsenide, and silicon.
Claim 37
Dependent Claim
15 words
The transistor of claim 22 wherein said organic semiconductor material consists essentially of 3,4,9,10-perylenetetracarboxylic dianhydride.
Claim 38
Dependent Claim
30 words
The optoelectronic device prepared by the process of claim 1 wherein steps (f) and (g) are alternately repeated a sufficient number of times to provide a multiple quantum well structure.
Claim 39
Dependent Claim
50 words
The device as recited in claim 2 comprising a plurality of alternating layers (58) of said first layer (60) and said second layer (62), said plurality of alternating layers (58) of said first (60) and said second (62) organic aromatic semiconductor materials located on top of said substrate layer (32).
Claim 40
Dependent Claim
123 words
The transistor of claim 26 wherein said outer layers (84, 84', 88, 88') constitute an emitter (88, 88') and a collector (84, 84') and wherein said inner layer (86, 86') constitutes a base (86, 86') and further wherein at least one of said collector (84, 84') and said base (86, 86') comprises a plurality of alternating layers (58) of said first (60) and said second (62) planar crystalline organic aromatic semiconductor materials, said second (62) planar crystalline organic aromatic semiconductor material having a generally different chemical composition than said first (60) planar organic aromatic semiconductor material, said plurality of alternating layers (58) of said first (60) and said second (62) organic aromatic semiconductor materials located on top of said substrate layer (80, 80').
References Cited (Backward Citations)
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