US5010382A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heterojunction bipolar transistor having double hetero structure
Assignee: Toshiba Corp
•
Filing: 1989-12-04
•
Granted: 1991-04-23
•
Expires: 2009-12-04
Abstract
Abstract A double heterojunction bipolar transistor which comprises a first conductivity type emitter layer, a second conductivity type base layer which is in contact with the emitter layer and forms a first heterojunction in conjunction with the emitter layer, and a collector layer which is in contact with the base layer and is made up of a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The collector layer includes a low-impurity concentration layer which is in contact with the base layer. The low-impurity concentration layer has the same conductivity type as the base layer and has an impurity concentration lower than that of the base layer. The collector layer forms a second heterojunction in conjunction with the base layer. The emitter layer and the collector layer are formed of a semiconductor material having a band gap wider than that of the base layer.
Inventors
- 👤 Riichi Katoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:26
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/80; H10D10/821; H10D62/00; H10D62/10; H10D62/17; H10D62/177
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
170 words
A double heterojunction bipolar transistor, comprising: a first conductivity type emitter layer; a second conductivity type base layer which is in contact with the emitter layer and forms a first heterojunction in conjunction with the emitter layer; and a collector layer which is in contact with the base layer, said collector layer being made up of a first conductivity type semiconductor layer and a second conductivity type semiconductor layer and including a second conductivity type low-impurity concentration layer which is in contact with the base layer such that the low-impurity concentration layer has an impurity concentration lower than that of the base layer, said collector layer forming a second heterojunction in conjunction with the base layer, the second heterojunction including a transition layer which is formed such that the band gap thereof varies stepwise or smoothly, said transition layer being isolated from the base layer, and said emitter layer and said collector layer being formed of a semiconductor material having a band gap wider than that of the base layer.
Claim 2
Dependent Claim
170 words
A double heterojunction bipolar transistor, comprising: a first conductivity type emitter layer; a second conductivity type base layer which is in contact with the emitter layer and forms a first heterojunction in conjunction with the emitter layer; and a collector layer which is in contact with the base layer, said collector layer being made up of a first conductivity type semiconductor layer and a second conductivity type semiconductor layer and including a second conductivity type low-impurity concentration layer which is in contact with the base layer such that the low-impurity concentration layer has an impurity concentration lower than that of the base layer, said collector layer forming a second heterojunction in conjunction with the base layer, the second heterojunction including a transition layer which is formed such that the band gap thereof varies stepwise or smoothly, said transition layer being isolated from the base layer, and said emitter layer and said collector layer being formed of a semiconductor material having a band gap wider than that of the base layer.
Claim 3
Dependent Claim
37 words
A double heterojunction bipolar transistor according to claim 1, wherein said transition layer is formed in contact with the low-impurity concentration layer, and is isolated from both the base layer and the first conductivity type semiconductor layer.
Claim 4
Dependent Claim
48 words
A double heterojunction bipolar transistor according to claim 1, wherein said transition layer is in contact with the low-impurity concentration layer, and includes a second conductivity type region in contact with the low-impurity concentration layer and a first conductivity region in contact with the second conductivity type region.
Claim 5
Dependent Claim
68 words
A double heterojunction bipolar transistor according to claim 1, wherein the first heterojunction between the base layer and the collector layer includes a transition layer which is formed such that the band gap thereof varies stepwise or smoothly, said transition layer being of the first conductivity type and formed in that portion of the first conductivity type semiconductor layer which is located outside of the low-impurity concentration region.
Claim 6
Dependent Claim
148 words
A double heterojunction bipolar transistor according to claim 1, wherein: said collector layer includes a first collector layer which is of the same conductivity type as the base layer, a second collector layer which is of a different conductivity type from that of the base layer, and a third collector layer which is of the same conductivity type as the second collector layer, said first collector layer being closest to the base layer and said third collector layer being farthest from the base layer; said first, second and third collector layers satisfy the following relationship: N.sub.1 <N.sub.2 ≦N.sub.3 where N 1 denotes the impurity concentration in the first collector layer, N 2 denotes the impurity concentration in the second collector layer, and N 3 denotes the impurity concentration in the third collector layer; and said first collector layer is not completely depleted when a zero bias is applied.
Claim 7
Dependent Claim
40 words
A double heterojunction bipolar transistor according to claim 1, wherein said base layer includes an external base region, and that portion of the collector layer which is located under the external base region is formed by a high resistant layer.
Claim 8
Dependent Claim
90 words
A double heterojunction bipolar transistor according to claim 1, wherein said collector layer includes: a first conductivity type high-impurity concentration layer; a first conductivity type first transition layer formed on the high-impurity concentration layer; a first conductivity type low-impurity concentration layer formed on the first transition layer; a second conductivity type second transition layer formed on the low-impurity concentration layer; and the second conductivity type low-impurity concentration layer formed on the second transition layer, said second transition layer being formed such that the band gap thereof varies stepwise or smoothly.
Claim 9
Dependent Claim
21 words
A double heterojunction bipolar transistor according to claim 1, wherein said double heterojunction bipolar transistor is of a collector top structure.
Claim 10
Dependent Claim
28 words
A double heterojunction bipolar transistor according to claim 1, wherein said emitter layer includes semiconductor layers which are combined in such a manner as to cause lattice mismatching.
Claim 11
Dependent Claim
28 words
A double heterojunction bipolar transistor according to claim 1, wherein said emitter layer includes an Al 0 .3 Ga 0 .7 As layer having a wide band gap.
References Cited (Backward Citations)
JPS59211267A
Cited
JPS60110159A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-22 | 1994-10-22 | 1995-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-22 | 1998-10-22 | 1999-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-22 | 2002-10-22 | 2003-04-23 | $7700.00 | Window Closed / Lapsed |