Patent US2554198A successfully refreshed from Google Patents.
US5314575A
Expired / Lapsed
US
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Etching method and apparatus
Assignee: Sony Corp
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Filing: 1992-08-11
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Granted: 1994-05-24
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Expires: 2012-08-11
Abstract
Abstract A reactive ion etching method is described in which a silicon compound film formed on an underlying layer or a substrate is etched through a mask layer by a two-stage procedure. In the two-stage procedure, part of the silicon compound film is first etched with a gas containing a hydrogen-free carbon fluoride gas at a high etching rated and then with a gas containing a hydrogen-containing carbon fluoride gas while reducing the damage on the underlying layer or substrate. The apparatus for carrying out the method is also disclosed.
Inventors
- 👤 Toshiharu Yanagida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 07:43
CPC Classifications
H; H10; H10P; H10P50/00; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/3266; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
77 words
A reactive ion etching method which comprises the steps of: forming a mask layer with a pattern on a silicon compound film; etching part of the silicon compound film along a depth of the film through the mask layer with a first etching gas consisting of a hydrogen-free carbon fluoride gas; and further etching the remaining portion of the silicon compound film along the depth with a second etching gas consisting of a hydrogen-containing carbon fluoride gas.
Claim 2
Dependent Claim
77 words
A reactive ion etching method which comprises the steps of: forming a mask layer with a pattern on a silicon compound film; etching part of the silicon compound film along a depth of the film through the mask layer with a first etching gas consisting of a hydrogen-free carbon fluoride gas; and further etching the remaining portion of the silicon compound film along the depth with a second etching gas consisting of a hydrogen-containing carbon fluoride gas.
Claim 3
Dependent Claim
33 words
The method according to claim 1, wherein the silicon compound film is made of a member selected from the group consisting of silicon oxides and silicon nitrides and is formed on a support.
Claim 4
Dependent Claim
35 words
The method according to claim 1, wherein the hydrogen-free carbon fluoride gas is of the formula, C n F 2n or C n F 2n+2 wherein n is an integer of not less than 1.
Claim 5
Dependent Claim
35 words
The method according to claim 1, wherein the hydrogen-containing carbon fluoride gas is of the formula, C n H 2n+2-m F m wherein n and m are each an integer of not less than 1.
Claim 6
Dependent Claim
91 words
A reactive ion etching method which comprises the steps of: forming a mask layer with a pattern on a silicon compound film; etching part of the silicon compound film along a depth of the film through the mask layer with a first etching gas containing a hydrogen-free carbon fluoride gas, stopping the etching when less than 10 percent of the depth of the film is left; and further etching the remaining portion of the silicon compound film along the depth with a second etching gas containing a hydrogen-containing carbon fluoride gas.
Claim 7
Dependent Claim
91 words
A reactive ion etching method which comprises the steps of: forming a mask layer with a pattern on a silicon compound film; etching part of the silicon compound film along a depth of the film through the mask layer with a first etching gas containing a hydrogen-free carbon fluoride gas, stopping the etching when less than 10 percent of the depth of the film is left; and further etching the remaining portion of the silicon compound film along the depth with a second etching gas containing a hydrogen-containing carbon fluoride gas.
Claim 8
Dependent Claim
34 words
A method according to claim 1, wherein the hydrogen-free carbon fluoride gas is selected from the group consisting of C 3 F 8 , C 2 F 6 and C 4 F 8 .
Claim 9
Dependent Claim
27 words
A method according to claim 6, wherein the hydrogen-containing carbon fluoride gas is selected from the group consisting of CHF 3 and CH 2 F 2 .
Claim 10
Dependent Claim
31 words
A method according to claim 1, wherein the hydrogen-containing fluoride gas of the second etching gas is selected from the group consisting of CHF 3 and CH 2 F 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-23 | 1997-11-22 | 1998-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-23 | 2001-11-22 | 2002-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-23 | 2005-11-22 | 2006-05-24 | $7700.00 | Window Closed / Lapsed |