US5313423A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device
Assignee: Micron Memory Japan Ltd
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Filing: 1991-09-03
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Granted: 1994-05-17
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Expires: 2011-09-03
Abstract
Abstract A multiport memory is provided which permits both random access and serial access. In order to reduce parasitic capacitance and improve operating speed, the serial input/output lines are each divided into two parts at their middle points. Sense amplifiers for the serial input/output lines are provided at upper and lower ends of the serial access memory elements to respectively amplify signals from the divided lines. Additional features are provided for improving both the serial and random operation. For example, during the serial read mode, the column selector for random access is simultaneously operated, and read data passing through the random access column selector is used as head data for the serial output operation to be delivered through the serial output circuit. Also, a serial selector can be controlled by a select signal formed by a Gray Code counter to improve operating speed. Further features included a redundancy system for relief of defective bits, the use of common bit lines to improve integration density and an improved refreshing arrangement to reduce power consumption during the refresh mode.
Inventors
- 👤 Katsuyuki Sato
- 👤 Miki Matsumoto
- 👤 Sadayuki Ohkuma
- 👤 Masahiro Ogata
- 👤 Masahiro Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:01
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/18; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C7/10; G11C7/1075; G11C8/00; G11C8/10
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
209 words
A semiconductor memory device comprising: a serial memory array having a plurality of address locations; a spare serial memory array having a plurality of spare address locations; addressing means for receiving address data; selecting means coupled between said addressing means and said serial memory array to sequentially select predetermined address locations within said serial memory array in accordance with said address data; means for selectively coupling predetermined address locations in said serial memory array with an input/output buffer in accordance with outputs of said selecting means; a comparator including means for storing data regarding known defective address locations in said serial memory array, means for comparing an output of said addressing means with said known defective address locations, and means for generating a first signal if said output of said addressing means matches one of said known defective address location; and means coupled to said comparator for coupling a predetermined one of said spare memory locations in said spare serial memory array with said input/output buffer instead of a predetermined one of said address locations in said serial memory array when said first signal is generated by said generating means, wherein said selecting means includes a Gray Code Counter for converting said address data into a Gray Code sequence.
Claim 2
Dependent Claim
209 words
A semiconductor memory device comprising: a serial memory array having a plurality of address locations; a spare serial memory array having a plurality of spare address locations; addressing means for receiving address data; selecting means coupled between said addressing means and said serial memory array to sequentially select predetermined address locations within said serial memory array in accordance with said address data; means for selectively coupling predetermined address locations in said serial memory array with an input/output buffer in accordance with outputs of said selecting means; a comparator including means for storing data regarding known defective address locations in said serial memory array, means for comparing an output of said addressing means with said known defective address locations, and means for generating a first signal if said output of said addressing means matches one of said known defective address location; and means coupled to said comparator for coupling a predetermined one of said spare memory locations in said spare serial memory array with said input/output buffer instead of a predetermined one of said address locations in said serial memory array when said first signal is generated by said generating means, wherein said selecting means includes a Gray Code Counter for converting said address data into a Gray Code sequence.
Claim 3
Dependent Claim
33 words
A semiconductor memory device according to claim 1, wherein said selecting means includes a shift register to provide a succession of selection signals in a clocked manner in accordance with said address data.
Claim 4
Dependent Claim
34 words
A semiconductor memory according to claim 1 further comprising means for disabling the selection of a predetermined address location in said serial memory array when said first signal is generated by said generating means.
Claim 5
Dependent Claim
34 words
A semiconductor device according to claim 1 further comprising means for disabling the selection of a predetermined address location in said serial memory array when said first signal is generated by said generating means.
Claim 6
Dependent Claim
117 words
A semiconductor memory device according to claim 2 further comprising a first switch coupled between said address locations in said serial memory array and said input/output buffer, and a second switch coupled between said spare address locations in said spare serial memory array and said input/output buffer, wherein said first switch operates to disconnect said predetermined one of said address locations in said serial memory address array from said input/output buffer when said first signal is generated by said generating means, and wherein said second switch operates to connect said predetermined one of said spare address locations in said spare serial memory array to said input/output buffer when said first signal is generated by said generating means.
Claim 7
Dependent Claim
119 words
A semiconductor memory device according to claim 5 further comprising: a plurality of bit lines in said serial memory array respectively coupled to said memory address locations; a plurality of spare bit lines in said spare serial memory array respectfully coupled to said spare memory address locations; a pair of common input/output lines coupled between said plurality of bit lines and said input/output buffer; and a pair of spare common input/output lines coupled between said plurality of spare bit lines and said input/output buffer, wherein said first switch is coupled between said pair of common input/output lines and said input/output buffer; and wherein said second switch is coupled between said pair of spare input/output lines and said input/output buffer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-16 | 1997-11-15 | 1998-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-16 | 2001-11-15 | 2002-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-16 | 2005-11-15 | 2006-05-17 | $7700.00 | Window Closed / Lapsed |