Patent US5664964A successfully refreshed from Google Patents.
Patent US5310531A successfully refreshed from Google Patents.
US5310531A
Expired / Lapsed
US
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Polycrystalline silicon rod for floating zone method and process for making the same
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1992-11-30
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Granted: 1994-05-10
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Expires: 2012-11-30
Abstract
Abstract A polycrystalline silicon rod for preparing a monocrystalline silicon rod by a floating zone method, wherein at least a central portion of the section of the polycrystalline silicon rod has coarsened silicon monocrystalline grains around the center over an area of or above the minimum section of a molten zone during progress in the floating zone method and the outer peripheral portion of the coarsened region has fine monocrystalline grains. From the polycrystalline silicon rod, the monocrystalline silicon rod for a semiconductor is prepared with a high yield by the single floating zone method.
Inventors
- 👤 Yasuhiro Ikeda
- 👤 Kyoji Oguro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:40
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B13/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
167 words
A polycrystalline silicon rod for preparing a monocrystalline silicon rod for a semiconductor by a floating zone method wherein the monocrystalline silicon rod is prepared by a single passage of the floating molten zone through said polycrystalline silicon rod, said polycrystalline silicon rod comprising: (a) a monocrystalline silicon rod portion having a longitudinal axis in the <100> direction at the center of the radial section of the polycrystalline silicon rod, and a polycrystalline silicon portion formed around said monocrystalline silicon rod portion by a chemical vapor growth method; and (b) a first region of the sectional area of said polycrystalline silicon portion which is formed of coarsened silicon monocrystal grains surrounding said monocrystalline silicon rod portion and a second region of said sectional area which is formed of fine silicon micro-monocrystal grains surrounding said first region of said polycrystalline silicon portion and said first region and the monocrystalline silicon rod portion combined having a sectional area larger than the minimum sectional area of the floating molten zone.
Claim 2
Dependent Claim
167 words
A polycrystalline silicon rod for preparing a monocrystalline silicon rod for a semiconductor by a floating zone method wherein the monocrystalline silicon rod is prepared by a single passage of the floating molten zone through said polycrystalline silicon rod, said polycrystalline silicon rod comprising: (a) a monocrystalline silicon rod portion having a longitudinal axis in the <100> direction at the center of the radial section of the polycrystalline silicon rod, and a polycrystalline silicon portion formed around said monocrystalline silicon rod portion by a chemical vapor growth method; and (b) a first region of the sectional area of said polycrystalline silicon portion which is formed of coarsened silicon monocrystal grains surrounding said monocrystalline silicon rod portion and a second region of said sectional area which is formed of fine silicon micro-monocrystal grains surrounding said first region of said polycrystalline silicon portion and said first region and the monocrystalline silicon rod portion combined having a sectional area larger than the minimum sectional area of the floating molten zone.
Claim 3
Dependent Claim
52 words
The polycrystalline silicon rod of claim 1 wherein the first region of said sectional area consists of densified aggregates of coarsened silicon monocrystalline needle-like grains of 2 mm to 3 mm in length and the monocrystalline silicon rod portion of the center of said polycrystalline silicon rod is about 5 mm thick.
Claim 4
Dependent Claim
26 words
The polycrystalline silicon rod of claim 2 wherein said first region of said sectional area is about 30 to about 50 mm in the outer diameter.
Claim 5
Dependent Claim
29 words
The polycrystalline silicon rod of claim 1 wherein the monocrystalline silicon rod portion is in the form of a square pillar with the four sides all in {110} planes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-09 | 1997-11-08 | 1998-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-09 | 2001-11-08 | 2002-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-09 | 2005-11-08 | 2006-05-10 | $7700.00 | Window Closed / Lapsed |