Interlocked on-chip ECC system

Claim 2

A DRAM, comprising: a plurality of memory cells each being coupled to a respective one of a plurality of word lines and a respective one of a plurality of bit lines; a plurality of data lines, first means for coupling selected ones of said plurality of bit lines to said plurality of data lines to read data sensed from a selected one of said plurality of memory cells onto said plurality of data lines; an ECC block coupled to said data lines; and second means for monitoring said plurality of data lines and, as a result of said monitoring, preventing said ECC block from receiving data from said plurality of data lines until such data is valid.

Claim 3

The DRAM of claim 1, wherein said second means comprises a dummy data line that has the same general performance characteristics as said plurality of data lines.

Claim 4

The DRAM of claim 2, wherein said second means is coupled to a third means that has the same general performance characteristics as said first means.

Claim 5

In a DRAM having at least one array of memory cells coupled to a plurality of word lines and a plurality of bit lines, and a plurality of data lines coupled to selected ones of the bit lines to read data sensed from selected ones of the memory cells onto said plurality of data lines, the array including drivers that drive respective sensed data bits onto respective ones of the plurality of data lines as a function of the data stored by respective ones of the memory cells, an on-chip ECC block comprising: first means for reading the data bits from said plurality of data lines; second means for generating syndrome bits at an output as a function of the data bits read by said first means; third means correcting the data bit on a selected one of said plurality of data lines should said syndrome bits indicate an error thereon; and fourth means for monitoring said plurality of data lines and, as a result of said monitoring, preventing said first means and reading data from said plurality of data lines until the data bits thereon are valid.

Claim 6

In a DRAM having at least one array of memory cells coupled to a plurality of word lines and a plurality of bit lines, and a plurality of data lines coupled to selected ones of the bit lines to read data sensed from selected ones of the memory cells onto said plurality of data lines, the array including drivers that drive respective sensed data bits onto respective ones of the plurality of data lines as a function of the data stored by respective ones of the memory cells, an on-chip ECC block comprising: first means for reading the data bits from said plurality of data lines; second means for generating syndrome bits at an output as a function of the data bits read by said first means; third means correcting the data bit on a selected one of said plurality of data lines should said syndrome bits indicate an error thereon; and fourth means for monitoring said plurality of data lines and, as a result of said monitoring, preventing said first means and reading data from said plurality of data lines until the data bits thereon are valid.

Claim 7

The ECC block of claim 4, further comprising: sixth means for monitoring said second means and preventing said third means from receiving said syndrome bits from said second means until said syndrome bits are valid.

Claim 8

The ECC block of claim 4, further comprising: clocking means for enabling said first means, wherein said fourth means produces a first enabling signal at a first time interval to enable said clocking means, and wherein said fourth means produces a second enabling signal at a second time interval later than said first time interval to enable said first means to receive the data bits from said plurality of data lines.

Claim 9

The ECC block of claim 6, wherein said fourth means comprises at least one dummy data line.

Claim 10

The ECC block of claim 7, wherein said dummy data line is driven by a fifth means providing the same general performance characteristics as the drivers within the array of memory cells.

Claim 11

The ECC block of claim 4, further comprising: a data register for storing the corrected data as generated by said third means; and seventh means for driving data from said data register to said plurality of data lines.

Claim 12

The ECC block of claim 9, wherein said fourth means monitors said seventh means and prevents said array of memory cells from receiving data on said plurality of data lines from said seventh means until said data is valid.

Claim 13

The ECC block of claim 9, further comprising: eighth means for monitoring said output of said second means and for generating a first control signal that controls data transfer from said data register.

Claim 14

The ECC block of claim 11, wherein said eighth means generates a second control signal after said first control signal to at least partially restore the ECC block.

Claim 15

A DRAM, comprising an array of memory cells, a data register, a plurality of data lines coupled between said array of memory cells and said data register for passing data bits therebetween, a dummy data line driven to first and second binary logic states, said dummy data line enabling passage of data from said array of memory cells to said data register only when it is driven to said first binary logic state, and said dummy data line enabling passage of data from said data register to said array of memory cells only when it is driven to said second binary logic state.

Claim 16

A DRAM, comprising an array of memory cells, a data register, a plurality of data lines coupled between said array of memory cells and said data register for passing data bits therebetween, a dummy data line driven to first and second binary logic states, said dummy data line enabling passage of data from said array of memory cells to said data register only when it is driven to said first binary logic state, and said dummy data line enabling passage of data from said data register to said array of memory cells only when it is driven to said second binary logic state.

Claim 17

The DRAM of claim 13, wherein said dummy data line is driven by a first driver means to said first logic state, and is driven by a second driver means to said second logic state.

Claim 18

The DRAM of claim 14, wherein said array of memory cells includes third driver means for driving data therefrom to said plurality of data lines, and wherein said data register includes fourth driver means for driving data therefrom to said plurality of data lines.

Claim 19

The DRAM of claim 15, wherein said first driver means provides the same performance characteristics as said third driver means, and wherein said second driver means provides the same performance characteristics as said fourth driver means.

Claim 20

In a DRAM comprising an array of memory cells coupled to a plurality of bit lines and a plurality of word lines, a plurality of data lines selectively coupled to selected ones of the plurality of bit lines for reading data sensed from selected ones of the memory cells for being driven to carry data bits indicative of logic states stored by the selected ones of the memory cells, an on-chip ECC block comprising: receiver means for receiving the data bits from the plurality of data lines and generating inputs therefrom to a corresponding plurality of internal ECC busses; syndrome generating means for checking the data bits received by the receiver means for the presence of errors, and for producing a plurality of syndrome bits; an error detecting and correcting means coupled to said plurality of internal ECC busses, said error detecting and correcting means receiving said plurality of syndrome bits from said syndrome generating means to determine if any of said plurality of internal ECC busses are carrying bad data, and to correct such bad data thereon; a data register coupled to said plurality of ECC busses for receiving data therefrom; write-back means for driving data from said data register onto the plurality of data lines for receipt by the selected ones of the memory cells; and first interlock means for monitoring said plurality of data lines and, as a result of said monitoring, preventing said receiver means from receiving data from said plurality of data lines until such data is valid, and for preventing the selected ones of the memory cells from receiving data from said data register until such data is valid.

Claim 21

In a DRAM comprising an array of memory cells coupled to a plurality of bit lines and a plurality of word lines, a plurality of data lines selectively coupled to selected ones of the plurality of bit lines for reading data sensed from selected ones of the memory cells for being driven to carry data bits indicative of logic states stored by the selected ones of the memory cells, an on-chip ECC block comprising: receiver means for receiving the data bits from the plurality of data lines and generating inputs therefrom to a corresponding plurality of internal ECC busses; syndrome generating means for checking the data bits received by the receiver means for the presence of errors, and for producing a plurality of syndrome bits; an error detecting and correcting means coupled to said plurality of internal ECC busses, said error detecting and correcting means receiving said plurality of syndrome bits from said syndrome generating means to determine if any of said plurality of internal ECC busses are carrying bad data, and to correct such bad data thereon; a data register coupled to said plurality of ECC busses for receiving data therefrom; write-back means for driving data from said data register onto the plurality of data lines for receipt by the selected ones of the memory cells; and first interlock means for monitoring said plurality of data lines and, as a result of said monitoring, preventing said receiver means from receiving data from said plurality of data lines until such data is valid, and for preventing the selected ones of the memory cells from receiving data from said data register until such data is valid.

Claim 22

The on-chip ECC block of claim 17, further comprising: second interlock means for preventing said error detecting and correcting means from receiving said plurality of syndrome bits from said syndrome generating means until the syndrome bits are valid.

Claim 23

The on-chip ECC system of claim 17, wherein during write-back of data from said data register to said array of memory cells said syndrome generating means generates new check bits, the system further comprising: fourth interlock means for preventing said write-back means from operating until said new check bits are valid.

Claim 24

The on-chip ECC block of claim 17, further comprising: third interlock means for producing a first enable signal that enables data transfers from said data register to occur when data from said plurality of internal ECC busses is valid.

Claim 25

The on-chip ECC block of claim 20, wherein said third interlock means produces a second enable signal a predetermined time after said first enable signal to at least partially restore the ECC block.

Claim 26

The on-chip ECC system of claim 17, wherein said first interlock means comprises a dummy data line that assumes a first logic state when data on said plurality of data lines from the selected ones of the memory cells is valid, and assumes a second logic state when data on said plurality of data lines from said data register is valid.

Claim 27

The on-chip ECC system of claim 22, wherein said dummy data line is coupled to said write-back driver means.

Claim 28

The on-chip ECC system of claim 22, further comprising: control means for enabling said receiver means, said dummy data line producing a first signal at a first predetermined time prior to the data from the selected ones of the memory cells being valid to enable said control means for enabling said receiver means, and producing a second signal when the data from the selected ones of the memory cells is valid to enable the receiver means to receive inputs from the plurality of data lines.

Claim 29

The on-chip ECC system of claim 17, wherein said syndrome generating means utilizes a DED/SEC error correction code.

Claim 30

The on-chip ECC system of claim 25, wherein said DED/SEC code is a Hamming code.

Claim 31

The on-chip ECC system of claim 25, wherein said syndrome generating means comprises DCVS logic circuits.

Claim 32

The on-chip ECC system of claim 25, wherein said error detection and correction means comprises a NOR gate for receiving said syndrome bits, and an XOR gate for receiving a signal from said NOR gate and data from said internal ECC busses.

Claim 33

In a memory comprising a plurality of memory cells, each of which is coupled to one of a plurality of word lines and to one of a plurality of bit lines, a plurality of data lines for reading data from selected ones of said plurality of bit lines sensed from respective ones of said plurality of memory cells, a plurality of bit switches for coupling said selected ones of said plurality of bit lines to said data lines, a dummy data line means for simulating said plurality of data lines comprising a first simulating means having performance characteristics similar to said plurality of bit switches and a second simulating means having performance characteristics similar to said plurality of data lines, and register means for receiving data from said plurality of data lines, said register means being prevented from receiving said data from said plurality of data lines until said dummy data line means indicates that said data is valid.

Claim 34

In a memory comprising a plurality of memory cells, each of which is coupled to one of a plurality of word lines and to one of a plurality of bit lines, a plurality of data lines for reading data from selected ones of said plurality of bit lines sensed from respective ones of said plurality of memory cells, a plurality of bit switches for coupling said selected ones of said plurality of bit lines to said data lines, a dummy data line means for simulating said plurality of data lines comprising a first simulating means having performance characteristics similar to said plurality of bit switches and a second simulating means having performance characteristics similar to said plurality of data lines, and register means for receiving data from said plurality of data lines, said register means being prevented from receiving said data from said plurality of data lines until said dummy data line means indicates that said data is valid.