Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
195 words
A method of fabricating an active matrix substrate for a liquid-crystal display having a plurality of individual transparent electrodes and a plurality of thin-film transistors both arranged in a matrix form, said method comprising the steps of: forming a first silicon thin film in which impurities high in concentration are doped onto a transparent substrate, and patterning said first silicon thin film into source and drain regions; forming a second silicon thin film on said source and drain regions, and patterning said second silicon thin film into a first island region which covers said source and drain regions and a second island region which is contiguous to said first island region and is slightly larger than the configuration of said transparent electrode; forming an insulating film on said second silicon thin film; forming in said insulating film at least a pair of contact holes over said source and drain regions, and a hole identical with the configuration of said individual transparent electrode on said second island region of said second silicon thin film; forming a metal silicide by heat-treating said metal; and patterning said metal to form a gate, a source, and a drain line.
Claim 2
Independent Claim
195 words
A method of fabricating an active matrix substrate for a liquid-crystal display having a plurality of individual transparent electrodes and a plurality of thin-film transistors both arranged in a matrix form, said method comprising the steps of: forming a first silicon thin film in which impurities high in concentration are doped onto a transparent substrate, and patterning said first silicon thin film into source and drain regions; forming a second silicon thin film on said source and drain regions, and patterning said second silicon thin film into a first island region which covers said source and drain regions and a second island region which is contiguous to said first island region and is slightly larger than the configuration of said transparent electrode; forming an insulating film on said second silicon thin film; forming in said insulating film at least a pair of contact holes over said source and drain regions, and a hole identical with the configuration of said individual transparent electrode on said second island region of said second silicon thin film; forming a metal silicide by heat-treating said metal; and patterning said metal to form a gate, a source, and a drain line.
Claim 3
Independent Claim
160 words
A method of fabricating an active matrix substrate for a liquid-crystal display having a plurality of individual transparent electrodes and a plurality of thin-film transistors both arranged in a matrix form, said method comprising the steps of: forming a first silicon thin film in which high concentrations of impurities are doped onto a transparent substrate, and patterning said first silicon thin film into source and drain regions; forming a second silicon thin film on said source and drain regions; forming an insulating film on said second silicon thin film; forming in said insulating film at least a pair of contact holes over said source and drain regions, and a hole identical with the configuration of said transparent electrode; forming metal on said second silicon thin film, said metal reacting with at least silicon in order to form silicide; forming a metal silicide by heat-treating said metal; and patterning said metal to form a gate, a source and a drain line.
Claim 4
Independent Claim
160 words
A method of fabricating an active matrix substrate for a liquid-crystal display having a plurality of individual transparent electrodes and a plurality of thin-film transistors both arranged in a matrix form, said method comprising the steps of: forming a first silicon thin film in which high concentrations of impurities are doped onto a transparent substrate, and patterning said first silicon thin film into source and drain regions; forming a second silicon thin film on said source and drain regions; forming an insulating film on said second silicon thin film; forming in said insulating film at least a pair of contact holes over said source and drain regions, and a hole identical with the configuration of said transparent electrode; forming metal on said second silicon thin film, said metal reacting with at least silicon in order to form silicide; forming a metal silicide by heat-treating said metal; and patterning said metal to form a gate, a source and a drain line.