US4878097A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor photoelectric conversion device and method for making same
Assignee: Eastman Kodak Co
•
Filing: 1988-10-21
•
Granted: 1989-10-31
•
Expires: 2008-10-21
Abstract
Abstract A non-single-crystal semiconductor photoelectric conversion device has a laminate member composed of a pair of first and second PIN structures and a transparent conductive layer interposed therebetween, the first PIN structure being disposed on the side to which light is incident. I-type layers of the first and second PIN structures have the same semiconductor component, and the transparent conductive layer consists of compound of metal and the same material as that for a P or N-type layer of the first or second PIN structure. The I-type layer of the first PIN structure is larger in the optical energy gap and in the amount of recombination center neutralizer contained but lower in the degree of crystallization than the I-type layer of the second PIN structure. In the case of forming the laminate member, a PIN structure corresponding to the first (or second) PIN structure of the laminate member is formed by a known CVD method, then a transparent conductive layer corresponding to the transparent conductive layer is deposited on the PIN structure and then heat annealed, and then other PIN structure corresponding to the second (or first) PIN structure is formed the CVD method, followed by crystallizing its I-type.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:17
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F77/00; H10F77/20; H10F77/244; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/004
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
148 words
A photoelectric conversion device comprising: a substrate; a first doped non-single-crystalline semiconductor layer of a first conductivity type formed on said substrate; a first intrinsic non-single-crystalline semiconductor layer formed on said first doped semiconductor layer; a second doped non-single-crystalline semiconductor layer of a second conductivity type opposite to said first conductivity type formed on said intrinsic semiconductor layer; a transparent conductive layer made of chromium silicide and having a thickness of 5-20 Å formed on said second doped semiconductor layer for the purpose of avoiding the impurity diffusion between said second and third doped semiconductor layers; a third doped non-single-crystalline semiconductor layer of said first conductivity type deposited on said transparent layer; a second intrinsic non-single-crystalline semiconductor layer formed on said third layer; and a fourth doped non-single-crystalline semiconductor layer of said second conductivity type opposite to said first conductivity type formed on said second intrinsic semiconductor layer.
Claim 2
Dependent Claim
148 words
A photoelectric conversion device comprising: a substrate; a first doped non-single-crystalline semiconductor layer of a first conductivity type formed on said substrate; a first intrinsic non-single-crystalline semiconductor layer formed on said first doped semiconductor layer; a second doped non-single-crystalline semiconductor layer of a second conductivity type opposite to said first conductivity type formed on said intrinsic semiconductor layer; a transparent conductive layer made of chromium silicide and having a thickness of 5-20 Å formed on said second doped semiconductor layer for the purpose of avoiding the impurity diffusion between said second and third doped semiconductor layers; a third doped non-single-crystalline semiconductor layer of said first conductivity type deposited on said transparent layer; a second intrinsic non-single-crystalline semiconductor layer formed on said third layer; and a fourth doped non-single-crystalline semiconductor layer of said second conductivity type opposite to said first conductivity type formed on said second intrinsic semiconductor layer.
Claim 3
Dependent Claim
24 words
The device as defined by claim 1 wherein said second and third impurity semiconductor layers are made from Si x C 1-x wherein 0<x<1.
Claim 4
Dependent Claim
20 words
The device as defined by claim 2 wherein one of said intrinsic semiconductor layers has been crystallized by light irradiation.
Claim 5
Dependent Claim
147 words
A photoelectric device comprising: a substrate; a first doped non-single-crystalline semiconductor layer of a first conductivity type formed on said substrate; a first intrinsic non-single-crystalline semiconductor layer formed on said first doped semiconductor layer; a second doped non-single-crystalline semiconductor layer of a second conductivity type opposite to said first conductivity type formed on said intrinsic semiconductor layer; a transparent conductive layer made of molybdenum silicide and having a thickness of 5-20 Å formed on said second doped semiconductor layer for the purpose of avoiding the impurity diffusion between said second and third doped semiconductor layers; a third doped non-single-crystalline semiconductor layer of said first conductivity type deposited on said transparent layer; a second intrinsic non-single-crystalline semiconductor layer formed on said third layer; and a fourth doped non-single-crystalline semiconductor layer of said second conductivity type opposite to said first conductivity type formed on said second intrinsic semiconductor layer.
Claim 6
Dependent Claim
147 words
A photoelectric device comprising: a substrate; a first doped non-single-crystalline semiconductor layer of a first conductivity type formed on said substrate; a first intrinsic non-single-crystalline semiconductor layer formed on said first doped semiconductor layer; a second doped non-single-crystalline semiconductor layer of a second conductivity type opposite to said first conductivity type formed on said intrinsic semiconductor layer; a transparent conductive layer made of molybdenum silicide and having a thickness of 5-20 Å formed on said second doped semiconductor layer for the purpose of avoiding the impurity diffusion between said second and third doped semiconductor layers; a third doped non-single-crystalline semiconductor layer of said first conductivity type deposited on said transparent layer; a second intrinsic non-single-crystalline semiconductor layer formed on said third layer; and a fourth doped non-single-crystalline semiconductor layer of said second conductivity type opposite to said first conductivity type formed on said second intrinsic semiconductor layer.
Claim 7
Dependent Claim
24 words
The device as defined by claim 4 wherein said second and third impurity semiconductor layers are made from Si x C 1-x wherein 0<x<1.
Claim 8
Dependent Claim
20 words
The device as defined by claim 5 wherein one of said intrinsic semiconductor layers has been crystallized by light irradiation.
Claim 9
Dependent Claim
148 words
A photoelectric conversion device comprising: a substrate; a first doped non-single-crystalline semiconductor layer of a first conductivity type formed on said substrate; a first intrinsic non-single-crystalline semiconductor layer formed on said first doped semiconductor layer; a second doped non-single-crystalline semiconductor layer of a second conductivity type opposite to said first conductivity type formed on said intrinsic semiconductor layer; a transparent conductive layer made of tungsten silicide and having a thickness of 5-20 Å formed on said second doped semiconductor layer for the purpose of avoiding the impurity diffusion between said second and third doped semiconductor layers; a third doped non-single-crystalline semiconductor layer of said first conductivity type deposited on said transparent layer; a second intrinsic non-single-crystalline semiconductor layer formed on said third layer; and a fourth doped non-single-crystalline semiconductor layer of said second conductivity type opposite to said first conductivity type formed on said second intrinsic semiconductor layer.
Claim 10
Dependent Claim
148 words
A photoelectric conversion device comprising: a substrate; a first doped non-single-crystalline semiconductor layer of a first conductivity type formed on said substrate; a first intrinsic non-single-crystalline semiconductor layer formed on said first doped semiconductor layer; a second doped non-single-crystalline semiconductor layer of a second conductivity type opposite to said first conductivity type formed on said intrinsic semiconductor layer; a transparent conductive layer made of tungsten silicide and having a thickness of 5-20 Å formed on said second doped semiconductor layer for the purpose of avoiding the impurity diffusion between said second and third doped semiconductor layers; a third doped non-single-crystalline semiconductor layer of said first conductivity type deposited on said transparent layer; a second intrinsic non-single-crystalline semiconductor layer formed on said third layer; and a fourth doped non-single-crystalline semiconductor layer of said second conductivity type opposite to said first conductivity type formed on said second intrinsic semiconductor layer.
Claim 11
Dependent Claim
24 words
The device as defined by claim 7 wherein said second and third impurity semiconductor layers are made from Si x C 1-x wherein 0<x<1.
Claim 12
Dependent Claim
20 words
The device as defined by claim 8 wherein one of said intrinsic semiconductor layers has been crystallized by light irradiation.
Claim 13
Dependent Claim
148 words
A photoelectric conversion device comprising: a substrate; a first doped non-single-crystalline semiconductor layer of a first conductivity type formed on said substrate; a first intrinsic non-single-crystalline semiconductor layer formed on said first doped semiconductor layer; a second doped non-single-crystalline semiconductor layer of a second conductivity type opposite to said first conductivity type formed on said intrinsic semiconductor layer; a transparent conductive layer made of titanium silicide and having a thickness of 5-20 Å formed on said second doped semiconductor layer for the purpose of avoiding the impurity diffusion between said second and third doped semiconductor layers; a third doped non-single-crystalline semiconductor layer of said first conductivity type deposited on said transparent layer; a second intrinsic non-single-crystalline semiconductor layer formed on said third layer; and a fourth doped non-single-crystalline semiconductor layer of said second conductivity type opposite to said first conductivity type formed on said second intrinsic semiconductor layer.
Claim 14
Dependent Claim
148 words
A photoelectric conversion device comprising: a substrate; a first doped non-single-crystalline semiconductor layer of a first conductivity type formed on said substrate; a first intrinsic non-single-crystalline semiconductor layer formed on said first doped semiconductor layer; a second doped non-single-crystalline semiconductor layer of a second conductivity type opposite to said first conductivity type formed on said intrinsic semiconductor layer; a transparent conductive layer made of titanium silicide and having a thickness of 5-20 Å formed on said second doped semiconductor layer for the purpose of avoiding the impurity diffusion between said second and third doped semiconductor layers; a third doped non-single-crystalline semiconductor layer of said first conductivity type deposited on said transparent layer; a second intrinsic non-single-crystalline semiconductor layer formed on said third layer; and a fourth doped non-single-crystalline semiconductor layer of said second conductivity type opposite to said first conductivity type formed on said second intrinsic semiconductor layer.
Claim 15
Dependent Claim
24 words
The device as defined by claim 10 wherein said second and third impurity semiconductor layers are made from Si x C 1-x wherein 0<x<1.
Claim 16
Dependent Claim
20 words
The device as defined by claim 11 wherein one of said intrinsic semiconductor layers has been crystallized by light irradiation.
References Cited (Backward Citations)
US4333099A
Cited
US4272641A
Cited
US4356622A
Cited
US4316049A
Cited
US4253882A
Cited
US4292461A
Cited
US4488166A
Cited
US4387265A
Cited
US4379943A
Cited
US4517269A
Cited
US4536607A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-30 | 1993-05-01 | 1993-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-30 | 1997-05-01 | 1997-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-30 | 2001-05-01 | 2001-10-31 | $7700.00 | Window Closed / Lapsed |