US5300377A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a phase shift mask comprising two phase shift layers and sloping sidewalls
Assignee: SK Hynix Inc
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Filing: 1992-05-07
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Granted: 1994-04-05
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Expires: 2012-05-07
Abstract
Abstract In order to manufacture a phase shift mask for hyperfine patterning, a sidewall phase shift mask is formed on both sides of each phase shift film in a spatial frequency modulation type phase shift mask. Accordingly, the light intensity occurring from the end part of the phase shift film, as the forming factor of the bridge pattern film, is reduced by the sidewall phase shift film.
Inventors
- 👤 Eun S. Keum
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:14
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/30
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
129 words
A method of manufacturing a phase shift mask comprising: (a) forming a light shielded film on a light incident substrate; (b) forming in parallel a plurality of pairs of light shielded pattern films, having a predetermined interval from each other, after having patterned the above light shielded film; (c) forming a first phase shift film on a whole surface formed by steps (a) and (b); (d) forming a phase shift film between each pair of light shielded pattern films, and then removing the first phase shift film between each pair; (e) forming a second phase shift film on a whole surface formed by step (d); (f) dry-etching the second phase shift film and forming a non-vertically sloping sidewall phase shift film on a sidewall of each phase shift film.
Claim 2
Independent Claim
129 words
A method of manufacturing a phase shift mask comprising: (a) forming a light shielded film on a light incident substrate; (b) forming in parallel a plurality of pairs of light shielded pattern films, having a predetermined interval from each other, after having patterned the above light shielded film; (c) forming a first phase shift film on a whole surface formed by steps (a) and (b); (d) forming a phase shift film between each pair of light shielded pattern films, and then removing the first phase shift film between each pair; (e) forming a second phase shift film on a whole surface formed by step (d); (f) dry-etching the second phase shift film and forming a non-vertically sloping sidewall phase shift film on a sidewall of each phase shift film.
Claim 3
Dependent Claim
57 words
A method of manufacturing a phase shift mask as defined in claim 1, wherein a width of the phase shift film formed between 2 light shielded pattern films, to be constituted with each pair in step (d), is wider than a width of an inside end part and narrower than a width of an outside end part.
Claim 4
Dependent Claim
21 words
A method of manufacturing a phase shift mask as defined in claim 1, wherein the dry-etching in step (f) is RIE.
Claim 5
Dependent Claim
20 words
A method of manufacturing a phase shift mask as defined in claim 1, wherein the light incident substrate is silica.
Claim 6
Dependent Claim
20 words
A method of manufacturing a phase shift mask as defined in claim 1, wherein the light shielded film is chrome.
References Cited (Backward Citations)
US5079113A
Cited
US5045417A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |