Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
100 words
A method of forming a passivating/buffer film on a substrate, comprising the steps of: a) heating the substrate to a temperature sufficient to cause a precursor to pyrolyze and be deposited on the substrate; b) volatilizing the precursor, which consists essentially of a single cubane or cubane-forming organometallic compound, at a precursor source; and c) directing a carrier gas from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate, whereby the volatilized precursor is pyrolyzed and is deposited onto the substrate, thereby forming the passivating/buffer film on said substrate.
Claim 2
Independent Claim
100 words
A method of forming a passivating/buffer film on a substrate, comprising the steps of: a) heating the substrate to a temperature sufficient to cause a precursor to pyrolyze and be deposited on the substrate; b) volatilizing the precursor, which consists essentially of a single cubane or cubane-forming organometallic compound, at a precursor source; and c) directing a carrier gas from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate, whereby the volatilized precursor is pyrolyzed and is deposited onto the substrate, thereby forming the passivating/buffer film on said substrate.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein the organometallic compound is a cubane organometallic compound.
Claim 4
Dependent Claim
14 words
The method of claim 2 wherein the precursor is (( t Bu)GaS) 4 .
Claim 5
Dependent Claim
14 words
The method of claim 2 wherein the precursor is (( t Bu)AlS) 4 .
Claim 6
Dependent Claim
14 words
The method of claim 2 wherein the precursor is (( t Bu)GaSe) 4 .
Claim 7
Dependent Claim
14 words
The method of claim 2 wherein the precursor is (( t Bu)GaTe) 4 .
Claim 8
Dependent Claim
14 words
The method of claim 1 wherein the organometallic compound is a cubane-forming organometallic compound.
Claim 9
Dependent Claim
16 words
The method of claim 7 wherein the cubane-forming organometallic compound is (( t Bu)GaS) 4 .
Claim 10
Dependent Claim
10 words
The method of claim 1 wherein the precursor includes selenium.
Claim 11
Dependent Claim
10 words
The method of claim 1 wherein the precursor includes tellurium.
Claim 12
Dependent Claim
10 words
The method of claim 1 wherein the precursor includes gallium.
Claim 13
Dependent Claim
10 words
The method of claim 1 wherein the precursor includes aluminum.
Claim 14
Dependent Claim
16 words
The method of claim 1 wherein the precursor further includes at least one tertiary butyl group.
Claim 15
Dependent Claim
11 words
The method of claim 13 wherein the substrate includes gallium arsenide.
Claim 16
Dependent Claim
11 words
The method of claim 13 wherein the substrate further includes aluminum.
Claim 17
Dependent Claim
15 words
The method of claim 15 wherein the aluminum is a component of an aluminum-containing compound.
Claim 18
Dependent Claim
26 words
The method of claim 1 wherein the precursor is (( n Bu)InSe) x and wherein x is in the range of between about four and eight.
Claim 19
Dependent Claim
14 words
The method of claim 1 wherein the precursor is (( t Bu)GaS) 7 .
Claim 20
Dependent Claim
26 words
The method of claim 1 wherein the precursor is (( n Bu)InS) x and wherein x is in the range of between about four and eight.
Claim 21
Dependent Claim
18 words
The method of claim 1 wherein the precursor is (( t Bu) 2 In(S t Bu)) 2 .
Claim 22
Dependent Claim
18 words
The method of claim 1 wherein the precursor is (( n Bu) 2 In(S t Bu)) 3 .
Claim 23
Dependent Claim
18 words
The method of claim 1 wherein the precursor is (( t Bu) 2 Ga(S t Bu)) 2 .
Claim 24
Dependent Claim
14 words
The method of claim 1 wherein the film formed is lattice-matched with the substrate.