Patent US5298446A successfully refreshed from Google Patents.
US5298446A
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Process for producing semiconductor device
Assignee: Sharp Corp
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Filing: 1992-08-25
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Granted: 1994-03-29
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Expires: 2012-08-25
Abstract
Abstract A process for producing a semiconductor device comprising the steps of: (a) on a semiconductor Si substrate having a gate electrode formed thereon through the intermediary of an SiO 2 film, i) forming as side wall of SiO 2 on the side of said gate electrode followed by formation of an SiN film over the entire surface of the Si substrate, or ii) forming on the entire surface of said substrate, an SiO 2 film and and SiN film in sequence, followed by formation of a side wall of SiO 2 on the side of said gate electrode; (b) injecting ions into said substrate; and (c) subjecting said substrate to a heat treatment with or without removal of the side wall of SiO 2 , thereby forming a diffusion region in the substrate.
Inventors
- 👤 Shigeo Onishi
- 👤 Akitsu Ayukawa
- 👤 Kenichi Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:12
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/21; H10P30/212; H10P30/225; H10P30/28; Y; Y10; Y10S; Y10S148/00; Y10S148/003
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
174 words
A process for producing a semiconductor device comprising the steps of: (a) on a semiconductor Si substrate having a gate electrode formed thereon through the intermediary of an SiO 2 film, forming on the entire surface of said substrate including said gate electrode, an SiO 2 film and a SiN film in sequence, followed by formation of a side wall of SiO 2 on the side of said gate electrode, the formation of the SiO 2 film being conducted by a heat oxidation method and the formation of the SiN film being conducted by a nitriding method; (b) injecting ions into said substrate through said SiO 2 film and said SiN film formed in sequence; and (c) removing the side wall of SiO 2 , followed by removal of the SiN film, the ion injection being conducted at an acceleration energy level of 20 KeV to 50 KeV and a dosage of about 3 to 5×10 15 cm -2 ; and, (d) subjecting said substrate to heat treatment to form a diffusion region therein.
Claim 2
Dependent Claim
174 words
A process for producing a semiconductor device comprising the steps of: (a) on a semiconductor Si substrate having a gate electrode formed thereon through the intermediary of an SiO 2 film, forming on the entire surface of said substrate including said gate electrode, an SiO 2 film and a SiN film in sequence, followed by formation of a side wall of SiO 2 on the side of said gate electrode, the formation of the SiO 2 film being conducted by a heat oxidation method and the formation of the SiN film being conducted by a nitriding method; (b) injecting ions into said substrate through said SiO 2 film and said SiN film formed in sequence; and (c) removing the side wall of SiO 2 , followed by removal of the SiN film, the ion injection being conducted at an acceleration energy level of 20 KeV to 50 KeV and a dosage of about 3 to 5×10 15 cm -2 ; and, (d) subjecting said substrate to heat treatment to form a diffusion region therein.
Claim 3
Dependent Claim
34 words
The process of claim 1 wherein the SiO 2 film has a thickness of about 50 Å to 150 Å and the SiN film has a thickness of about 5 Å to 15 Å.
Claim 4
Dependent Claim
18 words
The process of claim 1 wherein the ion injection is conducted so as to inject As + ions.
Claim 5
Dependent Claim
26 words
The process of claim 1 wherein the formation of said side wall of SiO 2 is conducted utilizing an RIE method and an HF etching method.
Claim 6
Dependent Claim
18 words
The process of claim 1 wherein the heat treatment is conducted at about 800° C. to 900° C.
Claim 7
Dependent Claim
149 words
A process for producing a semiconductor device comprising the steps of: (a) on a semiconductor Si substrate having a gate electrode formed thereon through the intermediary of an SiO 2 film, forming on the entire surface of said substrate, an SiO 2 film and SiN film in sequence, followed by formation of a side wall of SiO 2 on the side of said gate electrode; (b) injecting ions into said substrate; and (c) subjecting said substrate to a heat treatment, thereby forming a diffusion region in the substrate; wherein in step (a) the formation of the SiO 2 is conducted by a heat oxidation method and the formation of the SiN film is conducted by a nitriding method, in step (b) the ion injection is conducted at an acceleration energy level of 20 KeV to 50 KeV and a dosage of about 3 to 5×10 15 cm -2 .
Claim 8
Dependent Claim
149 words
A process for producing a semiconductor device comprising the steps of: (a) on a semiconductor Si substrate having a gate electrode formed thereon through the intermediary of an SiO 2 film, forming on the entire surface of said substrate, an SiO 2 film and SiN film in sequence, followed by formation of a side wall of SiO 2 on the side of said gate electrode; (b) injecting ions into said substrate; and (c) subjecting said substrate to a heat treatment, thereby forming a diffusion region in the substrate; wherein in step (a) the formation of the SiO 2 is conducted by a heat oxidation method and the formation of the SiN film is conducted by a nitriding method, in step (b) the ion injection is conducted at an acceleration energy level of 20 KeV to 50 KeV and a dosage of about 3 to 5×10 15 cm -2 .
Claim 9
Dependent Claim
22 words
A process as in claim 6 wherein the heat treatment is conducted with removal of the side wall of SiO 2 .
Claim 10
Dependent Claim
35 words
A process as in claim 6 wherein the SiO 2 film has a thickness of about 50 Å to 150 Å and the SiN film has a thickness of about 5 Å to 15 Å.
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