US5296730A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor pressure sensor for sensing pressure applied thereto
Assignee: Lapis Semiconductor Co Ltd
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Filing: 1993-01-05
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Granted: 1994-03-22
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Expires: 2013-01-05
Abstract
Abstract A semiconductor pressure sensor according to the present invention comprises a semiconductor substrate having a first surface, a second surface opposite to the first surface and a recess formed in the first surface, the recess defining an interior surface including a bottom surface; and a diffusion region extending from the adjacency of the bottom surface to the second surface. A pressure-sensitive resistance of the semiconductor pressure sensor is formed in the vicinity of the bottom surface of a diaphragm. Therefore, the pressure-sensitive resistance can be formed so as to be brought into alignment with the position of the diaphragm after the formation of the diaphragm. Accordingly, a semiconductor pressure sensor, which does not cause a displacement in position between the diaphragm and the pressure-sensitive resistance and is excellent in accuracy, can be easily fabricated. Further, since the pressure-sensitive resistance can be formed according to the shape of the diaphragm, the diaphragm can be reduced in size and fabricated in the form of a thin film.
Inventors
- 👤 Osamu Takano
- 👤 Koji Matsumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:22
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00222; B81C1/00246; G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0051; G01L9/0052; G01L9/0055; B81C2203/00; B81C2203/07; B81C2203/0707; B81C2203/0728; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
69 words
A semiconductor pressure sensor comprising: a semiconductor substrate having a first surface, a second surface opposite the first surface and a recess formed in the first surface, the recess defining an interior surface including a bottom surface; a diffusion region formed in the semiconductor substrate extending from the bottom surface to the second surface; and a conductive layer formed on the second surface, electrically connected to the diffusion region.
Claim 2
Dependent Claim
69 words
A semiconductor pressure sensor comprising: a semiconductor substrate having a first surface, a second surface opposite the first surface and a recess formed in the first surface, the recess defining an interior surface including a bottom surface; a diffusion region formed in the semiconductor substrate extending from the bottom surface to the second surface; and a conductive layer formed on the second surface, electrically connected to the diffusion region.
Claim 3
Dependent Claim
92 words
The semiconductor pressure sensor according to claim 1, wherein the semiconductor substrate comprises a first semiconductor substrate, an insulating layer formed on the first semiconductor substrate and a second semiconductor substrate formed on the insulating layer, the first semiconductor substrate having the first surface and a third surface opposite to the first surface, the second semiconductor substrate having the second surface and a fourth surface opposite to the second surface, the insulating layer sandwiched between the third surface and the fourth surface, a portion of the fourth surface constituting the bottom surface.
Claim 4
Dependent Claim
16 words
The semiconductor pressure sensor according to claim 1, wherein said diffusion region forms a piezoresistor element.
Claim 5
Dependent Claim
78 words
A semiconductor pressure sensor comprising: a semiconductor substrate having a first surface, a second surface opposite to the first surface and a recess formed in the first surface, the recess defining an interior surface including a bottom surface; an impurity layer formed in the semiconductor substrate extending from the bottom surface to the second surface, wherein the impurity layer forms a piezoresistor element; and a conductive layer formed on the second surface, electrically connected to the diffusion region.
Claim 6
Dependent Claim
78 words
A semiconductor pressure sensor comprising: a semiconductor substrate having a first surface, a second surface opposite to the first surface and a recess formed in the first surface, the recess defining an interior surface including a bottom surface; an impurity layer formed in the semiconductor substrate extending from the bottom surface to the second surface, wherein the impurity layer forms a piezoresistor element; and a conductive layer formed on the second surface, electrically connected to the diffusion region.
Claim 7
Dependent Claim
91 words
The semiconductor pressure sensor according to claim 4, wherein the semiconductor substrate comprises a first semiconductor substrate, an insulating layer formed on the first semiconductor substrate and a second semiconductor substrate formed on the insulating layer, the first semiconductor substrate having the first surface and a third surface opposite to the first surface, the second semiconductor substrate having the second surface and a fourth surface opposite the second surface, the insulating layer sandwiched between the third surface and the fourth surface, a portion of the fourth surface constituting the bottom surface.
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JPH03178172A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-21 | 1997-09-20 | 1998-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-21 | 2001-09-20 | 2002-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-21 | 2005-09-20 | 2006-03-22 | $7700.00 | Window Closed / Lapsed |