US5296722A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrically alterable resistive component stacked above a semiconductor substrate
Assignee: Unisys Corp
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Filing: 1993-01-26
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Granted: 1994-03-22
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Expires: 2013-01-26
Abstract
Abstract A memory cell includes a pair of spaced apart conductors on an insulating layer, and a novel electrically alterable resistive component between the conductors. This resistive component consists essentially of a single element semiconductor selected from the group of Si, Ge, C, and (alpha)-Sn, having a crystalline grain size which is smaller than polycrystalline. Dopant atoms in the semiconductor are limited to be less than 1017 atoms/CM3; and, such a doping range includes zero doping. All dopant atoms are interstitial in the semiconductor crystals and not substitutional.
Inventors
- 👤 Hanan Potash
- 👤 Melvyn E. Genter
- 👤 Bruce B. Roesner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:33
CPC Classifications
H; H10; H10B; H10B20/00; Y; Y10; Y10S; Y10S257/00; Y10S257/91
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
158 words
An electrically alterable resistive component in an integrated circuit; said circuit including a substrate having a major surface, a patterned insulating layer on said surface, and a polycrystalline silicon member which has large crystalline grains that occur in silicon when it is subjected to temperatures above 600° C.; and said electrically alterable resistive component being comprised of: a pair of spaced apart conductors, supported by said insulating layer, for applying a threshold voltage thereacross; a switching material serially coupled between said conductors for receiving said threshold voltage; said switching material consisting essentially of silicon having less than 10 17 dopant atoms per CM 3 and having small crystalline grains that occur in silicon which is deposited at temperatures below 600° C. and confined to such temperatures; whereby said switching material will exhibit a high resistance that will irreversibly switch to a low resistance without the flowing of any metal therethrough upon the application of said threshold voltage thereacross.
Claim 2
Dependent Claim
158 words
An electrically alterable resistive component in an integrated circuit; said circuit including a substrate having a major surface, a patterned insulating layer on said surface, and a polycrystalline silicon member which has large crystalline grains that occur in silicon when it is subjected to temperatures above 600° C.; and said electrically alterable resistive component being comprised of: a pair of spaced apart conductors, supported by said insulating layer, for applying a threshold voltage thereacross; a switching material serially coupled between said conductors for receiving said threshold voltage; said switching material consisting essentially of silicon having less than 10 17 dopant atoms per CM 3 and having small crystalline grains that occur in silicon which is deposited at temperatures below 600° C. and confined to such temperatures; whereby said switching material will exhibit a high resistance that will irreversibly switch to a low resistance without the flowing of any metal therethrough upon the application of said threshold voltage thereacross.
Claim 3
Dependent Claim
17 words
The invention of claim 1, wherein said dopant atoms in said switching material consist of intrinsic impurities.
Claim 4
Dependent Claim
143 words
An electrically alterable resistive component in an integrated circuit; said circuit including a substrate having a major surface, and a patterned insulating layer on said surface and said electrically alterable resistive component being comprised of: a pair of spaced apart conductors, supported by said insulating layer, for applying a threshold voltage thereacross; a switching material serially coupled between said conductors for receiving said threshold voltage; said switching material consisting essentially of silicon having less than 10 17 dopant atoms per CM 3 and having small crystalline grains, relative to the spacing of said conductors, such that many grains are crossed in traversing said switching material from one conductor to the other; whereby said switching material will exhibit a high resistance that will irreversibly switch to a low resistance without the flowing of any metal therethrough upon the application of said threshold voltage thereacross.
Claim 5
Dependent Claim
143 words
An electrically alterable resistive component in an integrated circuit; said circuit including a substrate having a major surface, and a patterned insulating layer on said surface and said electrically alterable resistive component being comprised of: a pair of spaced apart conductors, supported by said insulating layer, for applying a threshold voltage thereacross; a switching material serially coupled between said conductors for receiving said threshold voltage; said switching material consisting essentially of silicon having less than 10 17 dopant atoms per CM 3 and having small crystalline grains, relative to the spacing of said conductors, such that many grains are crossed in traversing said switching material from one conductor to the other; whereby said switching material will exhibit a high resistance that will irreversibly switch to a low resistance without the flowing of any metal therethrough upon the application of said threshold voltage thereacross.
Claim 6
Dependent Claim
17 words
The invention of claim 3, wherein said dopant atoms in said switching material consist of intrinsic impurities.
References Cited (Backward Citations)
US4146902A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-21 | 1997-09-20 | 1998-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-21 | 2001-09-20 | 2002-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-21 | 2005-09-20 | 2006-03-22 | $7700.00 | Window Closed / Lapsed |