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Patent US5296094A successfully refreshed from Google Patents.
US5296094A
Expired / Lapsed
US
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Process for etching silicon dioxide layer without micro masking effect
Assignee: Intel Corp
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Filing: 1992-06-12
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Granted: 1994-03-22
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Expires: 2012-06-12
Abstract
Abstract A process for etching a silicon dioxide layer is disclosed. The novel two step etch process is used, for example, to perform a contact etch through a BPSG layer. Both etch steps are carried out in a flow of O 2 and CHF 3 . In the first step, a high flow rate of oxygen (approximately 19 SCCM) is used. During this step, the bulk of the oxide is removed, without the problem of micro masking wherein small localized regions remain partially un-etched. In the second step, the remaining oxide is removed in a lower O 2 flow rate, giving good oxide to silicon selectivity.
Inventors
- 👤 Hongging Shan
- 👤 Donald W. Jillie, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:27
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
87 words
A process for etching an oxide layer during the fabrication of a device on a semiconductor substrate comprising the steps of: providing said semiconductor substrate having said oxide layer; and performing an etch in a flow of a mixture of gases comprising a halogen containing species and O 2 , wherein said flow of said O 2 is equal to or greater than 15 SCCM and wherein said flow of said O 2 is equal to or greater than 10% by volume of the total gas flow.
Claim 2
Dependent Claim
87 words
A process for etching an oxide layer during the fabrication of a device on a semiconductor substrate comprising the steps of: providing said semiconductor substrate having said oxide layer; and performing an etch in a flow of a mixture of gases comprising a halogen containing species and O 2 , wherein said flow of said O 2 is equal to or greater than 15 SCCM and wherein said flow of said O 2 is equal to or greater than 10% by volume of the total gas flow.
Claim 3
Dependent Claim
16 words
The process as described in claim 1 wherein said halogen containing species is CHF 3 .
Claim 4
Dependent Claim
37 words
The process as described in claim 2 wherein said flow of said O 2 is in the range of approximately 15-25 SCCM and said flow of said CHF 3 is in the range of approximately 75-150 SCCM.
Claim 5
Dependent Claim
13 words
The process as described in claim 2 wherein said oxide layer comprises BPSG.
Claim 6
Dependent Claim
41 words
The process as described in claim 3 wherein a surface comprising silicon underlies said oxide layer to be etched in at least some regions, said process exposing said surface comprising silicon in one or more of said at least some regions.
Claim 7
Dependent Claim
41 words
The process as described in claim 4 wherein a surface comprising silicon underlies said oxide layer to be etched in at least some regions, said process exposing said surface comprising silicon in one or more of said at least some regions.
Claim 8
Dependent Claim
102 words
A process for etching an oxide layer during the fabrication of a device on a semiconductor substrate comprising the steps of: providing said semiconductor substrate having said oxide layer; performing a first etch in a first flow of a first mixture of gases comprising a first halogen containing species and O 2 ; and performing a second etch in a second flow of a second mixture of gases comprising a second halogen containing species and O 2 , wherein said flow of said O 2 in said first mixture is greater than said flow of said O 2 in said second mixture.
Claim 9
Dependent Claim
102 words
A process for etching an oxide layer during the fabrication of a device on a semiconductor substrate comprising the steps of: providing said semiconductor substrate having said oxide layer; performing a first etch in a first flow of a first mixture of gases comprising a first halogen containing species and O 2 ; and performing a second etch in a second flow of a second mixture of gases comprising a second halogen containing species and O 2 , wherein said flow of said O 2 in said first mixture is greater than said flow of said O 2 in said second mixture.
Claim 10
Dependent Claim
20 words
The process as described in claim 7 wherein said first and said second halogen containing species are CHF 3 .
Claim 11
Dependent Claim
48 words
The process as described in claim 8 wherein said flow of said O 2 in said first etch is equal to or greater than 15 SCCM and wherein said flow of said O 2 is equal to or greater than 10% by volume of the total gas flow.
Claim 12
Dependent Claim
70 words
The process as described in claim 8 wherein the flow of O 2 in said first mixture of gases is in the range of approximately 15-25 SCCM, the flow of O 2 in said second mixture of gases is in the range of approximately 5-15 SCCM, and the flow of CHF 3 in said first and said second mixture of gases is in the range of approximately of 75-150 SCCM.
Claim 13
Dependent Claim
13 words
The process as described in claim 8 wherein said oxide layer comprises BPSG.
Claim 14
Dependent Claim
13 words
The process as described in claim 9 wherein said oxide layer comprises BPSG.
Claim 15
Dependent Claim
41 words
The process as described in claim 8 wherein a surface comprising silicon underlies said oxide layer to be etched in at least some regions, said process exposing said surface comprising silicon in one or more of said at least some regions.
Claim 16
Dependent Claim
41 words
The process as described in claim 11 wherein a surface comprising silicon underlies said oxide layer to be etched in at least some regions, said process exposing said surface comprising silicon in one or more of said at least some regions.
Claim 17
Dependent Claim
41 words
The process as described in claim 12 wherein a surface comprising silicon underlies said oxide layer to be etched in at least some regions, said process exposing said surface comprising silicon in one or more of said at least some regions.
Claim 18
Dependent Claim
126 words
A process for forming a contact opening through an oxide layer during the fabrication of a device on a semiconductor substrate, comprising the steps of: providing said substrate with said oxide layer; forming a mask on said substrate to expose said oxide layer in regions where said contact opening is to be formed; performing a first etch in a flow of a first mixture of gases comprising a first halogen containing species and O 2 ; performing a second etch in a flow of a second mixture of gases comprising a second halogen containing species and O 2 wherein said flow of said O 2 in said first mixture is greater than said flow of said O 2 in said second mixture; and removing said mask.
Claim 19
Dependent Claim
126 words
A process for forming a contact opening through an oxide layer during the fabrication of a device on a semiconductor substrate, comprising the steps of: providing said substrate with said oxide layer; forming a mask on said substrate to expose said oxide layer in regions where said contact opening is to be formed; performing a first etch in a flow of a first mixture of gases comprising a first halogen containing species and O 2 ; performing a second etch in a flow of a second mixture of gases comprising a second halogen containing species and O 2 wherein said flow of said O 2 in said first mixture is greater than said flow of said O 2 in said second mixture; and removing said mask.
Claim 20
Dependent Claim
20 words
The process as described in claim 16 wherein said first and said second halogen containing species are CHF 3 .
Claim 21
Dependent Claim
48 words
The process as described in claim 17 wherein said flow of said O 2 in said first etch is equal to or greater than 15 SCCM and wherein said flow of said O 2 is equal to or greater than 10% by volume of the total gas flow.
Claim 22
Dependent Claim
70 words
The process as described in claim 17 wherein the flow of O 2 in said first mixture of gases is in the range of approximately 15-25 SCCM, the flow of O 2 in said second mixture of gases is in the range of approximately 5-15 SCCM, and the flow of CHF 3 in said first and said second mixture of gases is in the range of approximately of 75-150 SCCM.
Claim 23
Dependent Claim
13 words
The process as described in claim 17 wherein said oxide layer comprises BPSG.
Claim 24
Dependent Claim
13 words
The process as described in claim 18 wherein said oxide layer comprises BPSG.
Claim 25
Dependent Claim
41 words
The process as described in claim 16 wherein a surface comprising silicon underlies said oxide layer to be etched in at least some regions, said process exposing said surface comprising silicon in one or more of said at least some regions.
Claim 26
Dependent Claim
41 words
The process as described in claim 20 wherein a surface comprising silicon underlies said oxide layer to be etched in at least some regions, said process exposing said surface comprising silicon in one or more of said at least some regions.
Claim 27
Dependent Claim
41 words
The process as described in claim 21 wherein a surface comprising silicon underlies said oxide layer to be etched in at least some regions, said process exposing said surface comprising silicon in one or more of said at least some regions.
Claim 28
Dependent Claim
19 words
The process as described in claim 16 wherein said contact opening has a diameter of 1.0 micron or less.
Claim 29
Dependent Claim
19 words
The process as described in claim 17 wherein said contact opening has a diameter of 1.0 micron or less.
Claim 30
Dependent Claim
19 words
The process as described in claim 18 wherein said contact opening has a diameter of 1.0 micron or less.
Claim 31
Dependent Claim
19 words
The process as described in claim 19 wherein said contact opening has a diameter of 1.0 micron or less.
References Cited (Backward Citations)
US4511430A
Cited
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