US5292399A — Plasma etching apparatus with conductive means fo…

Claim 1

Independent Claim 84 words

A method for plasma etching a semiconductor wafer without damaging said wafer by arcing from charge buildup on one or more insulation surfaces adjacent said wafer which comprises etching said wafer in a plasma etching apparatus having a plurality of conductive plug means for inhibiting arcing from electrical charges on said one or more insulation members which are located on metal members at rf potential within said apparatus, said conductive plug means extending through said one or more insulation surfaces to said metal members.

Claim 2

Independent Claim 84 words

A method for plasma etching a semiconductor wafer without damaging said wafer by arcing from charge buildup on one or more insulation surfaces adjacent said wafer which comprises etching said wafer in a plasma etching apparatus having a plurality of conductive plug means for inhibiting arcing from electrical charges on said one or more insulation members which are located on metal members at rf potential within said apparatus, said conductive plug means extending through said one or more insulation surfaces to said metal members.

Claim 3

Independent Claim 136 words

A method for plasma etching a semiconductor wafer without damaging said wafer by arcing from charge buildup on one or more insulation surfaces adjacent said wafer which comprises etching said wafer in a plasma etching apparatus containing a metal pedestal having a top surface on which said wafer to be etched is supported; insulation material located on a portion of said top surface of said metal pedestal, at least a portion of which insulation material immediately surrounds and is adjacent to said wafer; and electrical resistance means having an electrical resistivity of less than about 100 ohm-cm for inhibiting arcing from electrical charges on said insulation material, said electrical resistance means located on a top surface of said pedestal spaced from said wafer and surrounding said insulation material which surrounds and is adjacent to said wafer.

Claim 4

Independent Claim 136 words

A method for plasma etching a semiconductor wafer without damaging said wafer by arcing from charge buildup on one or more insulation surfaces adjacent said wafer which comprises etching said wafer in a plasma etching apparatus containing a metal pedestal having a top surface on which said wafer to be etched is supported; insulation material located on a portion of said top surface of said metal pedestal, at least a portion of which insulation material immediately surrounds and is adjacent to said wafer; and electrical resistance means having an electrical resistivity of less than about 100 ohm-cm for inhibiting arcing from electrical charges on said insulation material, said electrical resistance means located on a top surface of said pedestal spaced from said wafer and surrounding said insulation material which surrounds and is adjacent to said wafer.

Claim 5

Dependent Claim 131 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers to inhibit arcing from electrical charge buildup on one or more protective insulator surfaces on members at rf potential within said apparatus comprising: a) a metal pedestal having a top surface on which said wafer to be etched is supported; b) insulation material located on a portion of said top surface of said metal pedestal comprising a first portion immediately surrounding and adjacent said wafer; c) low electrical resistance means surrounded by at least a portion of said insulation material and extending from a top surface of said insulation material through said insulation material to said top surface of said pedestal; whereby arcing from electrical charge buildup on said surface of said insulation material within said apparatus is inhibited.

Claim 6

Dependent Claim 131 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers to inhibit arcing from electrical charge buildup on one or more protective insulator surfaces on members at rf potential within said apparatus comprising: a) a metal pedestal having a top surface on which said wafer to be etched is supported; b) insulation material located on a portion of said top surface of said metal pedestal comprising a first portion immediately surrounding and adjacent said wafer; c) low electrical resistance means surrounded by at least a portion of said insulation material and extending from a top surface of said insulation material through said insulation material to said top surface of said pedestal; whereby arcing from electrical charge buildup on said surface of said insulation material within said apparatus is inhibited.

Claim 7

Dependent Claim 34 words

The improved plasma etching apparatus of claim 3 wherein said low electrical resistance means comprise a conductive material selected from the class consisting of carbon; a silicide; titanium nitride; a carbide; and a semiconductor.

Claim 8

Dependent Claim 49 words

The improved plasma etching apparatus of claim 4 wherein said conductive material comprises one or more plug members extending from said top surface of said insulation material on said metal pedestal through said insulation material to at least said top surface of said metal pedestal beneath said insulation material.

Claim 9

Dependent Claim 29 words

The improved plasma etching apparatus of claim 5 wherein said one or more conductive plug members extend down into recesses formed in said top surface of said metal pedestal.

Claim 10

Dependent Claim 36 words

The improved plasma etching apparatus of claim 6 wherein said one or more conductive plug members each has an enlarged portion which extends down into a recess formed in said top surface of said metal pedestal.

Claim 11

Dependent Claim 60 words

The improved plasma etching apparatus of claim 5 wherein said metal pedestal has a side surface covered with an insulation member and said one or more plug members constructed of said conductive material extends from an outer surface of said insulation member on said side surface of said metal pedestal through said insulation member to said metal pedestal side surface.

Claim 12

Dependent Claim 16 words

The improved plasma etching apparatus of claim 4 wherein said low electrical resistance means comprise silicon.

Claim 13

Dependent Claim 25 words

The improved plasma etching apparatus of claim 9 wherein said silicon is doped to provide a resistivity ranging from about 0.001 to about 20 ohm-cm.

Claim 14

Dependent Claim 29 words

The improved plasma etching apparatus of claim 9 wherein said silicon is doped with one or more dopants selected from the class consisting of boron, phosphorus, antimony, and arsenic.

Claim 15

Dependent Claim 31 words

The improved plasma etching apparatus of claim 4 wherein said low electrical resistance means comprise a conductive material resistant to chemical attack by the plasma etching carried out in said apparatus.

Claim 16

Dependent Claim 54 words

The improved plasma etching apparatus of claim 4 wherein said conductive material comprises a ring on at least a portion of said top surface of said metal pedestal surrounding an inner ring of insulation on said top surface of said pedestal which inner ring of insulation surrounds said wafer mounted on said metal pedestal.

Claim 17

Dependent Claim 27 words

The improved plasma etching apparatus of claim 3 wherein said low electrical resistance means comprise a plurality of metal plugs symmetrically spaced apart in said insulation material.

Claim 18

Dependent Claim 63 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein the improvement comprises a plurality of conductive plug means for inhibiting arcing from electrical charges on one or more protective insulation members which are located on metal members at rf potential within said apparatus, said conductive plug means extending through said one or more insulation members to said metal members.

Claim 19

Dependent Claim 63 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein the improvement comprises a plurality of conductive plug means for inhibiting arcing from electrical charges on one or more protective insulation members which are located on metal members at rf potential within said apparatus, said conductive plug means extending through said one or more insulation members to said metal members.

Claim 20

Dependent Claim 60 words

The apparatus of claim 15 wherein said conductive plug means comprises one or more silicon plug members extending from a top surface of an insulation member which is located on a metal pedestal on which said wafer to be etched is mounted through said insulation member to at least a top surface of said metal pedestal beneath said insulation member.

Claim 21

Dependent Claim 42 words

The improvement of claim 16 wherein said one or more silicon plug members are doped with from about 10 14 to about 10 20 atoms/cm 3 of one or more dopants selected from the class consisting of boron, phosphorus, antimony, and arsenic.

Claim 22

Dependent Claim 81 words

The improved plasma etching apparatus of claim 15 wherein said plurality of conductive plug means comprises conductive plug members extending from a top surface of an insulation member which surrounds said wafer and is located on a metal pedestal on which said wafer to be etched is mounted through said insulation member to at least a top surface of said metal pedestal beneath said insulation member, and said conductive plug members are symmetrically spaced in said insulation member around said wafer.

Claim 23

Dependent Claim 28 words

The improved plasma etching apparatus of claim 15 wherein a top surface of each of said plurality of conductive plug means is completely surrounded by said insulation surfaces.

Claim 24

Dependent Claim 19 words

The improved plasma etching apparatus of claim 15 wherein said plurality of conductive plug means are circular in cross-section.

Claim 25

Dependent Claim 27 words

The improved plasma etching apparatus of claim 15 wherein the total area of said plurality of conductive plug means is at least about 1 cm 2 .

Claim 26

Dependent Claim 31 words

The apparatus of claim 15 wherein said plug members are constructed of a conductive material selected from the group consisting of carbon; a silicide; titanium nitride; a carbide; and a semiconductor.

Claim 27

Dependent Claim 114 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein the improvement comprises a plurality of conductive silicon plug means each having an end portion located in one or more protective insulator members which are located on members at rf potential within said apparatus to inhibit arcing from electrical charges accumulating on said insulator members, said silicon plug means extending through said one or more protective insulator members to said members at rf potential, said silicon plug means being doped with a sufficient amount of one or more dopants selected from the group consisting of boron, phosphorus, antimony, and arsenic to provide a resistivity of not greater than about 20 ohm-cm.

Claim 28

Dependent Claim 114 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein the improvement comprises a plurality of conductive silicon plug means each having an end portion located in one or more protective insulator members which are located on members at rf potential within said apparatus to inhibit arcing from electrical charges accumulating on said insulator members, said silicon plug means extending through said one or more protective insulator members to said members at rf potential, said silicon plug means being doped with a sufficient amount of one or more dopants selected from the group consisting of boron, phosphorus, antimony, and arsenic to provide a resistivity of not greater than about 20 ohm-cm.

Claim 29

Dependent Claim 161 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers having a metal pedestal at rf potential within said apparatus which supports said wafer, wherein the improvement comprises a first ring of protective insulation material covering a portion of an exposed top surface of said metal pedestal immediately surrounding said wafer thereon; a conductive silicon ring on another portion of said exposed top surface of said metal pedestal, and surrounding said first ring of insulation; and a second ring of protective insulation material on another portion of said exposed top surface of said metal pedestal surrounding said conductive silicon ring; said silicon ring acting to inhibit arcing by electrical charges accumulating on said first and second rings of insulation material adjacent said wafer, said silicon ring being doped with a sufficient amount of one or more dopants selected from the class consisting of boron, phosphorus, antimony, and arsenic to provide a resistivity of not greater than about 20 ohm-cm.

Claim 30

Dependent Claim 161 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers having a metal pedestal at rf potential within said apparatus which supports said wafer, wherein the improvement comprises a first ring of protective insulation material covering a portion of an exposed top surface of said metal pedestal immediately surrounding said wafer thereon; a conductive silicon ring on another portion of said exposed top surface of said metal pedestal, and surrounding said first ring of insulation; and a second ring of protective insulation material on another portion of said exposed top surface of said metal pedestal surrounding said conductive silicon ring; said silicon ring acting to inhibit arcing by electrical charges accumulating on said first and second rings of insulation material adjacent said wafer, said silicon ring being doped with a sufficient amount of one or more dopants selected from the class consisting of boron, phosphorus, antimony, and arsenic to provide a resistivity of not greater than about 20 ohm-cm.

Claim 31

Dependent Claim 246 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers to inhibit arcing from electrical charge buildup on one or more protective surfaces on members at rf potential within said apparatus comprising: a) a metal pedestal having a top surface on which said wafer to be etched is supported; b) first insulation material located on a portion of said top surface of said metal pedestal; c) a clamping ring mechanism, comprising a metal clamping ring with one or more metal surfaces thereon, which urges said wafer against said metal pedestal, said one or more metal surfaces on said clamping ring covered with second insulation material to protect said clamping ring mechanism from attack from said plasma; and d) one or more conductive plug members comprising a conductive material selected from the group consisting of carbon, a silicide, titanium nitride, a carbide, and a semiconductor: i) one or more of said conductive plug members extending from a top surface of said first insulation material located on a portion of said top surface of said metal pedestal through said first insulation material to said top surface of said pedestal; and ii) one or more of said conductive plug members extending from a surface of said second insulation material on said clamping ring through said second insulation material to said one or more metal surfaces of said clamping ring; whereby arcing from electrical charge buildup on said first and second insulation material within said apparatus is inhibited.

Claim 32

Dependent Claim 246 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers to inhibit arcing from electrical charge buildup on one or more protective surfaces on members at rf potential within said apparatus comprising: a) a metal pedestal having a top surface on which said wafer to be etched is supported; b) first insulation material located on a portion of said top surface of said metal pedestal; c) a clamping ring mechanism, comprising a metal clamping ring with one or more metal surfaces thereon, which urges said wafer against said metal pedestal, said one or more metal surfaces on said clamping ring covered with second insulation material to protect said clamping ring mechanism from attack from said plasma; and d) one or more conductive plug members comprising a conductive material selected from the group consisting of carbon, a silicide, titanium nitride, a carbide, and a semiconductor: i) one or more of said conductive plug members extending from a top surface of said first insulation material located on a portion of said top surface of said metal pedestal through said first insulation material to said top surface of said pedestal; and ii) one or more of said conductive plug members extending from a surface of said second insulation material on said clamping ring through said second insulation material to said one or more metal surfaces of said clamping ring; whereby arcing from electrical charge buildup on said first and second insulation material within said apparatus is inhibited.

Claim 33

Dependent Claim 126 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers to inhibit arcing from electrical charge buildup on one or more protective insulator surfaces on members at rf potential within said apparatus comprising: a) a metal pedestal having a top surface on which said wafer to be etched is supported; b) insulation material located on a portion of said top surface of said metal pedestal immediately surrounding and adjacent said wafer; c) electrical resistance means having an electrical resistivity of less than about 100 ohm-cm located on a portion of said top surface of said metal pedestal spaced from said wafer and surrounding said insulation material; whereby arcing from electrical charge buildup on said surface of said insulation material within said apparatus is inhibited.

Claim 34

Dependent Claim 126 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers to inhibit arcing from electrical charge buildup on one or more protective insulator surfaces on members at rf potential within said apparatus comprising: a) a metal pedestal having a top surface on which said wafer to be etched is supported; b) insulation material located on a portion of said top surface of said metal pedestal immediately surrounding and adjacent said wafer; c) electrical resistance means having an electrical resistivity of less than about 100 ohm-cm located on a portion of said top surface of said metal pedestal spaced from said wafer and surrounding said insulation material; whereby arcing from electrical charge buildup on said surface of said insulation material within said apparatus is inhibited.

Claim 35

Dependent Claim 119 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein said apparatus includes a metal pedestal and a clamping ring mechanism at rf potential within said apparatus, said clamping ring mechanism including a metal clamping ring which urges said wafer against said metal pedestal and one or more surfaces on said clamping ring mechanism covered with insulation material to protect said clamping ring mechanism from attack by said plasma etching, wherein said improvement comprises one or more plugs constructed of conductive material which extend from the surface of said insulation material to at least the metal surface of said clamping ring for inhibiting arcing from electrical charge buildup on said insulation material on said clamping ring.

Claim 36

Dependent Claim 119 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein said apparatus includes a metal pedestal and a clamping ring mechanism at rf potential within said apparatus, said clamping ring mechanism including a metal clamping ring which urges said wafer against said metal pedestal and one or more surfaces on said clamping ring mechanism covered with insulation material to protect said clamping ring mechanism from attack by said plasma etching, wherein said improvement comprises one or more plugs constructed of conductive material which extend from the surface of said insulation material to at least the metal surface of said clamping ring for inhibiting arcing from electrical charge buildup on said insulation material on said clamping ring.

Claim 37

Dependent Claim 92 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein the improvement comprises a plurality of conductive silicon plug means each having an end portion located in one or more protective insulator members which are located on members at rf potential within said apparatus to inhibit arcing from electrical charges accumulating on said insulator members, said conductive silicon plug means extending through said one or more protective insulator members to said members at rf potential, said conductive silicon plug means having a resistivity of less than about 100 ohm-cm.

Claim 38

Dependent Claim 92 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers wherein the improvement comprises a plurality of conductive silicon plug means each having an end portion located in one or more protective insulator members which are located on members at rf potential within said apparatus to inhibit arcing from electrical charges accumulating on said insulator members, said conductive silicon plug means extending through said one or more protective insulator members to said members at rf potential, said conductive silicon plug means having a resistivity of less than about 100 ohm-cm.

Claim 39

Dependent Claim 32 words

The improved plasma etching apparatus of claim 28 wherein said conductive silicon plug means are doped with one or more dopants selected from the group consisting of boron, phosphorus, antimony, and arsenic.

Claim 40

Dependent Claim 38 words

The improved plasma etching apparatus of claim 29 wherein said conductive silicon plug means are doped with a sufficient amount of said one or more dopants to provide a resistivity of from about 0.001 to about 20 ohm-cm.

Claim 41

Dependent Claim 139 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers having a metal pedestal at rf potential within said apparatus which supports said wafer, wherein the improvement comprises a first ring of protective insulation material covering a portion of an exposed top surface of said metal pedestal immediately surrounding said wafer thereon; a conductive silicon ring on another portion of said exposed top surface of said metal pedestal, and surrounding said first ring of insulation; and a second ring of protective insulation material on another portion of said exposed top surface of said metal pedestal surrounding said conductive silicon ring; said conductive silicon ring acting to inhibit arcing by electrical charges accumulating on said first and second rings of insulation material adjacent said wafer, said conductive silicon ring having a resistivity of less than about 100 ohm-cm.

Claim 42

Dependent Claim 139 words

An improved plasma etching apparatus for the plasma etching of semiconductor wafers having a metal pedestal at rf potential within said apparatus which supports said wafer, wherein the improvement comprises a first ring of protective insulation material covering a portion of an exposed top surface of said metal pedestal immediately surrounding said wafer thereon; a conductive silicon ring on another portion of said exposed top surface of said metal pedestal, and surrounding said first ring of insulation; and a second ring of protective insulation material on another portion of said exposed top surface of said metal pedestal surrounding said conductive silicon ring; said conductive silicon ring acting to inhibit arcing by electrical charges accumulating on said first and second rings of insulation material adjacent said wafer, said conductive silicon ring having a resistivity of less than about 100 ohm-cm.

Claim 43

Dependent Claim 31 words

The improved plasma etching apparatus of claim 31 wherein said conductive silicon ring is doped with one or more dopants selected from the group consisting of boron, phosphorus, antimony, and arsenic.

Claim 44

Dependent Claim 37 words

The improved plasma etching apparatus of claim 32 wherein said conductive silicon ring is doped with a sufficient amount of said one or more dopants to provide a resistivity of from about 0.001 to about 20 ohm-cm.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1997-03-07	1997-09-06	1998-03-08	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2001-03-07	2001-09-06	2002-03-08	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2005-03-07	2005-09-06	2006-03-08	$7700.00	Window Closed / Lapsed

Plasma etching apparatus with conductive means for inhibiting arcing

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