Microelectronic superconducting crossover and coil

Claim 2

A microelectronic device comprising a substrate; a first superconductor thin film layer of high T c superconductor metal oxide material capable of maintaining superconductivity at the boiling point of liquid nitrogen; a second insulating thin film layer covering at least a portion of said first superconductor thin film layer; said second insulating thin film layer being comprised of a material having high resistivity at temperatures below the T c of said first thin film, said second insulating thin film layer having a microstructure which is epitaxial or highly oriented sufficient to support epitaxial growth thereon of a third layer within a range of deposition temperatures, the third layer comprising a high T c superconductive material capable of maintaining superconductivity at the boiling point of liquid nitrogen, said second insulating thin film layer further having interdiffusion and chemical reactivity characteristics in relation to the material of said first superconductor thin film layer sufficient to maintain its insulating characteristics and not to degrade said first superconductor thin film layer when heated to a temperature within the range of deposition temperatures of the third layer, said second insulating thin film layer further having substantial coverage of and adhesion to said first superconductor thin film layer, and said second insulating thin film layer further having a high diffusion rate for oxygen in the range of deposition temperatures of the third layer.

Claim 3

A device according to claim 1 wherein said first superconductor thin film layer comprises a mixed metal superconductor oxide of yttrium, barium and copper, and wherein said second insulating thin film layer is selected from the group consisting of SrTiO 3 and yttrium stabilized zirconia.

Claim 4

A device according to claim 1 wherein said first superconductor thin film layer comprises YBa 2 Cu 3 O x .

Claim 5

A thin film microelectronic structure comprising a substrate, a first thin film epitaxial layer of a high T c superconductive material, a second thin film layer on the opposite side of said first thin film epitaxial layer from said substrate, said second thin film layer being comprised of a material having high resistivity at temperatures below the T c of said first thin film epitaxial layer, and a third thin film epitaxial layer of a high T c superconductive material formed at a selected deposition temperature on the opposite side of said second thin film layer from said first thin film epitaxial layer, each of the high T c superconductive materials of said first and third thin film epitaxial layers capable of maintaining superconductivity at the boiling point of liquid nitrogen, said second thin film layer having a microstructure which is epitaxial or highly oriented sufficient to support epitaxial growth thereon of said third thin film epitaxial layer, said second thin film layer further having interdiffusion and chemical reactivity characteristics in relation to the material of said first thin film epitaxial layer sufficient to maintain its insulating characteristics and not to degrade said first thin film epitaxial layer at said selected deposition temperature, said second thin film layer further having substantial coverage of and adhesion to said first thin film epitaxial layer, and said second thin film layer further having a high diffusion rate for oxygen at said selected deposition temperature of said third thin film epitaxial layer.

Claim 6

A thin film microelectronic structure comprising a substrate, a first thin film epitaxial layer of a high T c superconductive material, a second thin film layer on the opposite side of said first thin film epitaxial layer from said substrate, said second thin film layer being comprised of a material having high resistivity at temperatures below the T c of said first thin film epitaxial layer, and a third thin film epitaxial layer of a high T c superconductive material formed at a selected deposition temperature on the opposite side of said second thin film layer from said first thin film epitaxial layer, each of the high T c superconductive materials of said first and third thin film epitaxial layers capable of maintaining superconductivity at the boiling point of liquid nitrogen, said second thin film layer having a microstructure which is epitaxial or highly oriented sufficient to support epitaxial growth thereon of said third thin film epitaxial layer, said second thin film layer further having interdiffusion and chemical reactivity characteristics in relation to the material of said first thin film epitaxial layer sufficient to maintain its insulating characteristics and not to degrade said first thin film epitaxial layer at said selected deposition temperature, said second thin film layer further having substantial coverage of and adhesion to said first thin film epitaxial layer, and said second thin film layer further having a high diffusion rate for oxygen at said selected deposition temperature of said third thin film epitaxial layer.

Claim 7

A device according to claim 4 wherein said first thin film epitaxial layer comprises one or more strips and said third film epitaxial layer comprises one or more strips crossing over at least one of said strips of said first film epitaxial layer.

Claim 8

A device according to claim 4 including a superconducting contact extending between said first thin film epitaxial layer and said third thin film epitaxial layer.

Claim 9

A device according to claim 4 wherein said first thin film epitaxial layer comprises a mixed metal superconductor oxide of yttrium, barium and copper, said second thin film epitaxial layer comprises SrTiO 3 , and said third thin film epitaxial layer comprises a superconductor mixed metal oxide of yttrium, barium and copper.

Claim 10

A device according to claim 5 wherein each strip of said first thin film epitaxial layer has a thickness in the range of 0.1 to 0.6 μm and a width in the range of 0.1 to 10 mm; wherein said second thin film epitaxial layer comprises a thickness in the range of about 0.1 to 0.6 μm; and wherein each strip of said third thin film epitaxial layer comprises a thickness in the range of 0.1 to 0.6 μm and a width in the range of about 3 μm to 10 mm.

Claim 11

A device according to claim 4 comprising a multiturn coil wherein said first thin film epitaxial layer is electrically connected to said third thin film epitaxial layer at predetermined locations.

Claim 12

A device according to claim 9 wherein said coil comprises a flux transformer.

Claim 13

A device according to claim 4 wherein said first and third thin film epitaxial layers are comprised of YBa 2 Cu 3 O x .

Claim 14

A device according to claim 4 wherein said second thin film layer is comprised of SrTiO 3 .

Claim 15

A device according to claim 4 wherein said second thin film layer is comprised of yttrium stabilized zirconia.