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US5290394A
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Method of manufacturing a thin Hg1-x Cdx Te film
Assignee: NEC Corp
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Filing: 1992-09-18
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Granted: 1994-03-01
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Expires: 2012-09-18
Abstract
Abstract In a method of manufacturing a Hg1-xCdxTe (x=0 to 1) infrared detector using GaAs as a substrate, there is provided a method of depositing a HgCdTe film that has high crystalline quality. By changing the substrate temperature, it is possible to control the plane orientation of a CdTe buffer layer formed on a GaAs (211)B substrate. When the substrate temperature is high, the buffer layer is formed with plane orientation (133) and when the substrate temperature is low, the buffer layer is formed with plane orientation (211). In the former, it is possible to form a film having high crystalline quality as compared with that of a film in the latter.
Inventors
- 👤 Tokuhito Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:27
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B23/002; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3232; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/064
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
73 words
A method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film on a GaAs(211)B substrate through a CdTe buffer layer by molecular beam epitaxy, which comprises the steps of: heat treating said GaAs(211)B substrate at approximately 550° C. while exposing the surface thereof to a Te flux; and forming said CdTe buffer layer at a prescribed substrate temperature to control the plane orientation to result in a prescribed orientation.
Claim 2
Independent Claim
73 words
A method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film on a GaAs(211)B substrate through a CdTe buffer layer by molecular beam epitaxy, which comprises the steps of: heat treating said GaAs(211)B substrate at approximately 550° C. while exposing the surface thereof to a Te flux; and forming said CdTe buffer layer at a prescribed substrate temperature to control the plane orientation to result in a prescribed orientation.
Claim 3
Dependent Claim
52 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 1, wherein said CdTe buffer layer is formed at a substrate temperature of not less than 200° C. and less than 290° C. to control the surface orientation to be a (211)B orientation.
Claim 4
Dependent Claim
31 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 2, wherein said substrate temperature is between 270° C. and 290° C.
Claim 5
Dependent Claim
45 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 2, wherein said Hg 1-x Cd x Te film is formed on said CdTe buffer layer at a substrate temperature of 180° C. to 200° C.
Claim 6
Dependent Claim
47 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 1, wherein said CdTe buffer layer is formed at a substrate temperature between 300° C. and 360° C. to control the surface orientation to be a (133) orientation.
Claim 7
Dependent Claim
31 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 5, wherein said substrate temperature is between 310° C. and 330° C.
Claim 8
Dependent Claim
45 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 5, wherein said Hg 1-x Cd x Te film is formed on said CdTe buffer layer at a substrate temperature of 180° C. to 200° C.
Claim 9
Dependent Claim
45 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 5, wherein said CdTe buffer layer having the (133) orientation comprises CdTe having crystalline quality of a full width at half maximum of approximately 60 sec.
Claim 10
Independent Claim
97 words
A method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film on a GaAs(211)B substrate through a CdTe buffer layer by molecular beam epitaxy, which comprises the steps of: heat treating said GaAs(211)B substrate at approximately 550° C. while exposing the surface thereof to a Te flux, forming said CdTe buffer layer on the treated substrate surface at a substrate temperature of not less than 200° C. and less than 290° C., and then forming said Hg 1-x Cd x Te film on the CdTe buffer layer having a resulting (211)B growth orientation.
Claim 11
Independent Claim
97 words
A method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film on a GaAs(211)B substrate through a CdTe buffer layer by molecular beam epitaxy, which comprises the steps of: heat treating said GaAs(211)B substrate at approximately 550° C. while exposing the surface thereof to a Te flux, forming said CdTe buffer layer on the treated substrate surface at a substrate temperature of not less than 200° C. and less than 290° C., and then forming said Hg 1-x Cd x Te film on the CdTe buffer layer having a resulting (211)B growth orientation.
Claim 12
Dependent Claim
31 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 9, wherein said substrate temperature is between 270° C. and 290° C.
Claim 13
Dependent Claim
45 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 9, wherein said Hg 1-x Cd x Te film is formed on said CdTe buffer layer at a substrate temperature of 180° C. to 200° C.
Claim 14
Independent Claim
91 words
A method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film on a GaAs(211)B substrate through a CdTe buffer layer by molecular beam epitaxy, which comprises the steps of: heat-treating said GaAs(211)B substrate at approximately 550° C. while exposing the surface thereof to a Te flux, forming said CdTe buffer layer on the treated substrate surface at a substrate temperature between 300° C. and 360° C., and then forming said Hg 1-x Cd x Te film on the CdTe buffer layer having a resulting (133) growth orientation.
Claim 15
Independent Claim
91 words
A method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film on a GaAs(211)B substrate through a CdTe buffer layer by molecular beam epitaxy, which comprises the steps of: heat-treating said GaAs(211)B substrate at approximately 550° C. while exposing the surface thereof to a Te flux, forming said CdTe buffer layer on the treated substrate surface at a substrate temperature between 300° C. and 360° C., and then forming said Hg 1-x Cd x Te film on the CdTe buffer layer having a resulting (133) growth orientation.
Claim 16
Dependent Claim
31 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 12, wherein said substrate temperature is between 310° C. and 330° C.
Claim 17
Dependent Claim
45 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 12, wherein said Hg 1-x Cd x Te film is formed on said CdTe buffer layer at a substrate temperature of 180° C. to 200° C.
Claim 18
Dependent Claim
46 words
The method of manufacturing a thin Hg 1-x Cd x Te (x=0 to 1) film as defined in claim 12, wherein said CdTe buffer layer having the (133) growth orientation comprises CdTe having crystalline quality of a full width at half maximum of approximately 60 sec.
References Cited (Backward Citations)
US4960728A
Cited
JPH04312915A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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