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US5289017A
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Solid state imaging device having silicon carbide crystal layer
Assignee: Rohm Co Ltd
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Filing: 1992-12-21
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Granted: 1994-02-22
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Expires: 2012-12-21
Abstract
Abstract A solid state imaging device of claim 1, wherein the silicon carbide crystal layer is formed on a silicon substrate such that the insulating film is interposed between said silicon carbide crystal layer and said silicon substrate. Since the charge transfer part and the imaging part are formed in the silicon carbide layer, the device can normally operate even in a high-temperature or intensive radioactive ray environment the method for producing the device is also disclosed.
Inventors
- 👤 Keita Nii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 21:35
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D44/00; H10D44/40; H10D44/45; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1226
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
64 words
A solid state imaging device comprising a first-conductive type layer composed of a semiconductor crystal, a second conductive-type layer including a charge transfer part and an imaging part formed in the semiconductor crystal layer, and a charge transfer electrode part formed on said charge transfer part with an insulating film sandwiched therebetween, said semiconductor crystal layer being formed of a silicon carbide crystal layer.
Claim 2
Dependent Claim
64 words
A solid state imaging device comprising a first-conductive type layer composed of a semiconductor crystal, a second conductive-type layer including a charge transfer part and an imaging part formed in the semiconductor crystal layer, and a charge transfer electrode part formed on said charge transfer part with an insulating film sandwiched therebetween, said semiconductor crystal layer being formed of a silicon carbide crystal layer.
Claim 3
Dependent Claim
37 words
A solid state imaging device of claim 1, wherein the silicon carbide crystal layer is formed on a silicon substrate such that the insulating film is interposed between said silicon carbide crystal layer and said silicon substrate.
References Cited (Backward Citations)
JPS63133666A
Cited
JPS63302554A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-21 | 1997-08-23 | 1998-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-21 | 2001-08-23 | 2002-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-21 | 2005-08-23 | 2006-02-22 | $7700.00 | Window Closed / Lapsed |