Abstract In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.
A method of manufacturing a CCD solid state image sensing device comprising the steps of: (a) forming a first insulating layer made of SiO 2 on a P-type layer; (b) forming a second insulating layer made of Si 3 N 4 on said first insulating layer; (c) forming a third insulating layer made of SiO 2 on said second insulating layer; (d) removing said second and third insulating layers formed on a photo-sensitive section; (e) forming a transfer electrode on said third insulating layer; (f) implanting arsenic into said P-type layer to form a photo-sensitive region using said transfer electrode as a mask; and (g) carrying out a heat treatment in a nitrogen atmosphere to form said N-type impurity diffusion region.
Claim 2
Independent Claim
121 words
A method of manufacturing a CCD solid state image sensing device comprising the steps of: (a) forming a first insulating layer made of SiO 2 on a P-type layer; (b) forming a second insulating layer made of Si 3 N 4 on said first insulating layer; (c) forming a third insulating layer made of SiO 2 on said second insulating layer; (d) removing said second and third insulating layers formed on a photo-sensitive section; (e) forming a transfer electrode on said third insulating layer; (f) implanting arsenic into said P-type layer to form a photo-sensitive region using said transfer electrode as a mask; and (g) carrying out a heat treatment in a nitrogen atmosphere to form said N-type impurity diffusion region.
Claim 3
Dependent Claim
21 words
The method according to claim 1, in which said arsenic is implanted at a depth between 0.3 μm to 0.4 μm.