Patent US5287237A successfully refreshed from Google Patents.
US5287237A
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Antiferromagnetic film superior in corrosion resistance, magnetoresistance-effect element and magnetoresistance-effect head including such thin film
Assignee: HGST Japan Ltd
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Filing: 1991-03-12
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Granted: 1994-02-15
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Expires: 2011-03-12
Abstract
Abstract In order to prevent generation of Barkhausen noise of a magnetoresistance-effect element, a thin antiferromagnetic film formed of Fe-Mn-X alloy containing a third alloying element X (which serves to improve corrosion resistance of Fe-Mn alloy) by 0.1 to 20 atomic % is disposed in adjacent to a thin permalloy film. The element X is selected from the group consisting of Ir, Ru, Zr, Nb, Si, Ge, V, Co, Pt and Pd. It is particularly recommended to employ Ir of 4 to 15 atomic % or Ru of 5.5 to 15 atomic % as the element X. When one or more alloying element selected from Ru, Rh, Pt, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge is added to Fe and Mn which are essential components of the Fe-Mn-X alloy in addition to the element X, corrosion resistance of the alloy is improved more sufficiently.
Inventors
- 👤 Masahiro Kitada
- 👤 Noboru Shimizu
- 👤 Hideo Tanabe
- 👤 Ryoichi Nakatani
- 👤 Isamu Yuito
- 👤 Naoki Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:53
CPC Classifications
G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; B; B82; B82Y; B82Y25/00; G11; G11B; G11B5/00; G11B5/127; G11B5/31; G11B5/3109; G11B5/3113; G11B5/33; G11B5/39; G11B5/3903; G11B5/3967; H; H01; H01F; H01F10/00; H01F10/002; H01F10/32; H01F10/3218; H10; H10N; H10N50/00; H10N50/10; G11B5/3163; Y; Y10; Y10T; Y10T428/00; Y10T428/11; Y10T428/1107; Y10T428/12; Y10T428/12493; Y10T428/12771; Y10T428/12861
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
117 words
A thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ir and the Fe-Mn-Ir alloy contains Ir within a range of from 4 to 15 atomic %; and the Fe-Mn-Ir alloy further contains at least one element selected from Ru, Rh and Pt in addition to Ir by 4 to 15 atomic % in total.
Claim 2
Dependent Claim
117 words
A thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ir and the Fe-Mn-Ir alloy contains Ir within a range of from 4 to 15 atomic %; and the Fe-Mn-Ir alloy further contains at least one element selected from Ru, Rh and Pt in addition to Ir by 4 to 15 atomic % in total.
Claim 3
Dependent Claim
42 words
A thin antiferromagnetic film according to claim 1 wherein the Fe-Mn-Ir alloy further contains at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni and Cu by 0.1 to 2 atomic %.
Claim 4
Dependent Claim
114 words
A thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ru and the Fe-Mn-Ru alloy contains Ru within a range of from 5.5 to 15 atomic %, and the Fe-Mn-Ru alloy further contains at least one of Rh and Pt in addition to Ru by 5.5 to 15 atomic % in total.
Claim 5
Dependent Claim
114 words
A thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ru and the Fe-Mn-Ru alloy contains Ru within a range of from 5.5 to 15 atomic %, and the Fe-Mn-Ru alloy further contains at least one of Rh and Pt in addition to Ru by 5.5 to 15 atomic % in total.
Claim 6
Dependent Claim
126 words
A thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ru and the Fe-Mn-Ru alloy contains Ru within a range of from 5.5 to 15 atomic %, and the Fe-Mn-Ru alloy further contains at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge by 0.1 to 2 atomic %.
Claim 7
Dependent Claim
126 words
A thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ru and the Fe-Mn-Ru alloy contains Ru within a range of from 5.5 to 15 atomic %, and the Fe-Mn-Ru alloy further contains at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge by 0.1 to 2 atomic %.
Claim 8
Dependent Claim
97 words
A magnetoresistance-effect element including a thin antiferromagnetic film formed of Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X wherein an atomic percentage ratio of Mn to Fe is within a range of from 15/85 to 70/30, wherein: the element X is Ir, and the antiferromagnetic thin film is formed of the Fe-Mn-Ir alloy containing Ir within a range from 4 to 15 atomic %, and the Fe-Mn-Ir alloy further contains at least one element selected from Ru, Rh and Pt in addition to Ir by 4 to 15 atomic % in total.
Claim 9
Dependent Claim
97 words
A magnetoresistance-effect element including a thin antiferromagnetic film formed of Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X wherein an atomic percentage ratio of Mn to Fe is within a range of from 15/85 to 70/30, wherein: the element X is Ir, and the antiferromagnetic thin film is formed of the Fe-Mn-Ir alloy containing Ir within a range from 4 to 15 atomic %, and the Fe-Mn-Ir alloy further contains at least one element selected from Ru, Rh and Pt in addition to Ir by 4 to 15 atomic % in total.
Claim 10
Dependent Claim
11 words
A magnetic head including the magnetic-resistance-effect element according to claim 5.
Claim 11
Dependent Claim
103 words
A magnetoresistance-effect element including a thin antiferromagnetic film formed of Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X wherein an atomic percentage ratio of Mn to Fe is within a range of from 15/85 to 70/30, wherein: the element X is Ir, and the antiferromagnetic thin film is formed of the Fe-Mn-Ir alloy containing Ir within a range from 4 to 15 atomic %, and the Fe-Mn-Ir alloy further contains at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni and Cu by 0.1 to 2 atomic %.
Claim 12
Dependent Claim
103 words
A magnetoresistance-effect element including a thin antiferromagnetic film formed of Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X wherein an atomic percentage ratio of Mn to Fe is within a range of from 15/85 to 70/30, wherein: the element X is Ir, and the antiferromagnetic thin film is formed of the Fe-Mn-Ir alloy containing Ir within a range from 4 to 15 atomic %, and the Fe-Mn-Ir alloy further contains at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni and Cu by 0.1 to 2 atomic %.
Claim 13
Dependent Claim
11 words
A magnetic head including the magneto-resistance-effect element according to claim 7.
Claim 14
Dependent Claim
124 words
A magnetoresistance-effect element including a thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ru, and the antiferromagnetic thin film is formed of the Fe-Mn-Ru alloy containing Ru within a range from 5.5 to 15 atomic %, and the Fe-Mn-Ru alloy further contains at least one of Rh and Pt in addition to Ru by 5.5 to 15 atomic % in total.
Claim 15
Dependent Claim
124 words
A magnetoresistance-effect element including a thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ru, and the antiferromagnetic thin film is formed of the Fe-Mn-Ru alloy containing Ru within a range from 5.5 to 15 atomic %, and the Fe-Mn-Ru alloy further contains at least one of Rh and Pt in addition to Ru by 5.5 to 15 atomic % in total.
Claim 16
Dependent Claim
11 words
A magnetic head including the magneto-resistance-effect element according to claim 9.
Claim 17
Dependent Claim
135 words
A magnetoresistance-effect element including a thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ru, and the antiferromagnetic thin film is formed of the Fe-Mn-Ru alloy containing Ru within a range from 5.5 to 15 atomic %, and the Fe-Mn-Ru alloy further contains at least one selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge by 0.1 to 2 atomic %.
Claim 18
Dependent Claim
135 words
A magnetoresistance-effect element including a thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein: the element X is Ru, and the antiferromagnetic thin film is formed of the Fe-Mn-Ru alloy containing Ru within a range from 5.5 to 15 atomic %, and the Fe-Mn-Ru alloy further contains at least one selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge by 0.1 to 2 atomic %.
Claim 19
Dependent Claim
11 words
A magnetic head including the magneto-resistance-effect element according to claim 11.
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