Preparation of fluorine-doped tungstic oxide

Claim 2

A process for preparing a layer of fluorine-doped tungstic oxide on a substrate by a chemical vapor deposition method, comprising reacting together at the surface of the substrate tungsten hexafluoride, an oxygen-containing compound, and a fluorine-containing compound at a temperature from about 350° C. to about 450° C. and for a time sufficient to form a layer of WO 3-x F x on the surface of the substrate, wherein x if from greater than zero to about less than one.

Claim 3

The process for preparing fluorine-doped tungstic oxide according to claim 1, wherein the oxygen-containing compound is selected from the group consisting of isopropyl alcohol and t-butyl alcohol.

Claim 4

The process for preparing fluorine-doped tungstic oxide according to claim 1, wherein the fluorine-containing compound is 1,1-difluoroethane.

Claim 5

The process according to claim 1, wherein said fluorine-containing compound is selected from the group consisting of 1,1-difluoroethane, 1,1,1-chlorodifluoroethane, 1,1-difluoroethylene, chlorotrifluoroethylene, carbonyl fluoride, sulfur hexafluoride, nitrogen trifluoride, trifluoroacetic acid, bromotrifluoromethane, trifluoroacetic anhydride, ethyl trifluoroacetoacetate, trifluoroethanol, ethyl trifluoroacetate, pentafluoropropionic acid, heptafluorobutyryle chloride, 1,1,1-trifluoroacetylacetone, Freon, 2-chloro-1,1,2-trifluoroethylmethyl ether, chlorodifluoroacetic acid, difluoroacetic acid, ethyl chlorofluoroacetate, methyl trifluoroacetate, ethyl-4,4,4-trifluoroacetoacetate, hydrofluoric acid, as well as mixtures and derivatives thereof.

Claim 6

The process for preparing fluorine-doped tungstic oxide according to claim 1, wherein the molar ratio of tungsten hexafluoride to oxygen-containing compound is from about 5:1 to about 1:2.

Claim 7

The process for preparing fluorine-doped tungstic oxide according to claim 1, wherein the fluorine-containing compound comprises from about 1% to about 50% by weight of the reaction mixture.

Claim 8

A process for preparing a layer of fluorine-doped tungstic oxide on a substrate by a chemical vapor deposition method, comprising reacting together at the surface of the substrate tungsten hexafluoride, an oxygen-containing compound selected from the group consisting of isopropyl alcohol and t-butyl alcohol, and 1,1-difluoroethane, the molar ratio of tungsten hexafluoride to oxygen-containing compound being from about 3:1 to about 1:2, the 1,1-difluoroethane being from about 5% to about 30% by weight of the reaction mixture, at a temperature from about 400° C. to about 425° C. and for a time sufficient to form WO 3-x F x , wherein x is from greater than zero to about less than one.

Claim 9

A process for preparing a layer of fluorine-doped tungstic oxide on a substrate by a chemical vapor deposition method, comprising reacting together at the surface of the substrate tungsten hexafluoride, an oxygen-containing compound selected from the group consisting of isopropyl alcohol and t-butyl alcohol, and 1,1-difluoroethane, the molar ratio of tungsten hexafluoride to oxygen-containing compound being from about 3:1 to about 1:2, the 1,1-difluoroethane being from about 5% to about 30% by weight of the reaction mixture, at a temperature from about 400° C. to about 425° C. and for a time sufficient to form WO 3-x F x , wherein x is from greater than zero to about less than one.

Claim 10

A process for coating glass by a chemical vapor deposition method, comprising the steps of: (a) providing a glass substrate, having a surface; and (B) reacting at the surface of the substrate tungsten hexafluoride, an oxygen-containing compound, and a fluorine-containing compound, at a temperature from about 350° C. to about 450° C. and for a time sufficient to form a layer of WO 3-x F x on the surface of the glass substrate, wherein x is greater than zero to about less than one.

Claim 11

A process for coating glass by a chemical vapor deposition method, comprising the steps of: (a) providing a glass substrate, having a surface; and (B) reacting at the surface of the substrate tungsten hexafluoride, an oxygen-containing compound, and a fluorine-containing compound, at a temperature from about 350° C. to about 450° C. and for a time sufficient to form a layer of WO 3-x F x on the surface of the glass substrate, wherein x is greater than zero to about less than one.

Claim 12

The process for coating glass according to claim 8, wherein the oxygen-containing compound is selected from the group consisting of isopropyl alcohol and t-butyl alcohol.

Claim 13

The process for coating glass according to claim 8, wherein the fluorine-containing compound is 1,1-difluoroethane.

Claim 14

The process for coating glass according to claim 8, wherein the molar ratio of tungsten hexafluoride to oxygen-containing compound is from about 5:1 to about 1:2.

Claim 15

The process for coating glass according to claim 8, wherein the fluorine-containing compound comprises from about 1% to about 50% by weight of the reaction mixture.

Claim 16

A process for preparing a blue tinted, electrically conductive, infrared radiation reflecting coated glazing for automotive or architectural use by a chemical vapor deposition method, comprising the steps of: (A) providing a glass substrate, having a surface; and (B) reacting at the surface of the substrate tungsten hexafluoride, an oxygen-containing compound selected from the group consisting of isopropyl alcohol and t-butyl alcohol, and 1,1-difluoroethane, the molar ratio of tungsten hexafluoride to oxygen-containing compound being from about 3:1 to about 1:1, the 1,1-difluoroethane being from about 5% to about 30% by weight of the reaction mixture, at a temperature from about 400° C. to about 425° C. and for a time sufficient to form a layer of WO 3-x F x on the surface of the glass substrate, wherein x is from greater than zero to about less than one.

Claim 17

A process for preparing a blue tinted, electrically conductive, infrared radiation reflecting coated glazing for automotive or architectural use by a chemical vapor deposition method, comprising the steps of: (A) providing a glass substrate, having a surface; and (B) reacting at the surface of the substrate tungsten hexafluoride, an oxygen-containing compound selected from the group consisting of isopropyl alcohol and t-butyl alcohol, and 1,1-difluoroethane, the molar ratio of tungsten hexafluoride to oxygen-containing compound being from about 3:1 to about 1:1, the 1,1-difluoroethane being from about 5% to about 30% by weight of the reaction mixture, at a temperature from about 400° C. to about 425° C. and for a time sufficient to form a layer of WO 3-x F x on the surface of the glass substrate, wherein x is from greater than zero to about less than one.