US5286335A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Processes for lift-off and deposition of thin film materials
Assignee: Georgia Tech Research Corp
•
Filing: 1992-04-08
•
Granted: 1994-02-15
•
Expires: 2012-04-08
Abstract
Abstract Novel processes permit integrating thin film semiconductor materials and devices using epitaxial lift off, alignment, and deposition onto a host substrate. One process involves the following steps. An epitaxial layer(s) is deposited on a sacrificial layer situated on a growth substrate. Device layers may be defined in the epitaxial layer. All exposed sides of the epitaxial layer is coated with a transparent carrier layer. The sacrificial layer is then etched away to release the combination of the epitaxial layer and the transparent carrier layer from the growth substrate. The epitaxial layer can then be aligned and selectively deposited onto a host substrate. Finally, the transparent carrier layer is removed, thereby leaving the epitaxial layer on the host substrate. An alternative process involves substantially the same methodology as the foregoing process except that the growth substrate is etched away before the sacrificial layer.
Inventors
- 👤 Timothy J. Drabik
- 👤 Nan M. Jokerst
- 👤 Mark G. Allen
- 👤 Martin A. Brooke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:27
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/0198; H10P; H10P72/00; H10P72/70; H10P72/74; H10P72/7434; H10P72/744; H10W72/071; H10W72/073; H10W72/07331; Y; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S148/00; Y10S148/10; Y10S148/135
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
105 words
A process for lift-off of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination, preventing deformation of said epitaxial layer; and utilizing a carrier material for said carrier layer which permits dissociation of said epitaxial layer from said carrier layer after separating said combination without deformation of said epitaxial layer.
Claim 2
Dependent Claim
105 words
A process for lift-off of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination, preventing deformation of said epitaxial layer; and utilizing a carrier material for said carrier layer which permits dissociation of said epitaxial layer from said carrier layer after separating said combination without deformation of said epitaxial layer.
Claim 3
Dependent Claim
43 words
The process of claim 1, further comprising the steps of: placing said epitaxial layer over a position on a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 4
Dependent Claim
22 words
The process of claim 1, further comprising the step of selectively aligning said epitaxial layer with said position on a host substrate.
Claim 5
Dependent Claim
25 words
The process of claim 1, further comprising the step of defining device layers in said epitaxial layer by selectively removing regions of said epitaxial layer.
Claim 6
Dependent Claim
21 words
The process of claim 1, wherein said epitaxial layer comprises a thin film semiconductor measuring less than 20 micrometers in thickness.
Claim 7
Dependent Claim
13 words
The process of claim 1, wherein said carrier layer comprises a polymeric layer.
Claim 8
Dependent Claim
18 words
The process of claim 1, further comprising the step of depositing a metal layer on said epitaxial layer.
Claim 9
Dependent Claim
18 words
The process of claim 1, further comprising the step of depositing a dielectric layer on said epitaxial layer.
Claim 10
Dependent Claim
27 words
The process of claim 1, further comprising the step of altering the mechanical properties of said carrier layer to separate said epitaxial layer from said carrier layer.
Claim 11
Dependent Claim
111 words
A process for lift-off and alignable deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination, preventing deformation of said epitaxial layer; placing said epitaxial layer over a position on a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 12
Dependent Claim
111 words
A process for lift-off and alignable deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination, preventing deformation of said epitaxial layer; placing said epitaxial layer over a position on a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 13
Dependent Claim
22 words
The process of claim 10, further comprising the step of selectively aligning said epitaxial layer with said position on said host substrate.
Claim 14
Dependent Claim
25 words
The process of claim 10, further comprising the step of defining device layers in said epitaxial layer by selectively removing regions of said epitaxial layer.
Claim 15
Dependent Claim
21 words
The process of claim 10, wherein said epitaxial layer comprises a thin film semiconductor measuring less than 20 micrometers in thickness.
Claim 16
Dependent Claim
13 words
The process of claim 10, wherein said carrier layer comprises a polymeric layer.
Claim 17
Dependent Claim
18 words
The process of claim 10, further comprising the step of depositing a metal layer on said epitaxial layer.
Claim 18
Dependent Claim
18 words
The process of claim 10, further comprising the step of depositing a dielectric layer on said epitaxial layer.
Claim 19
Dependent Claim
27 words
The process of claim 10, further comprising the step of altering the mechanical properties of said carrier layer to separate said epitaxial layer from said carrier layer.
Claim 20
Dependent Claim
143 words
A process for lift-off and alignable deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said growth substrate to separate the combination of said sacrificial layer, said epitaxial layer, and said carrier layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination of said epitaxial layer and said carrier layer from said growth substrate, preventing deformation of said epitaxial layer; placing said epitaxial layer over a position on a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 21
Dependent Claim
143 words
A process for lift-off and alignable deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said growth substrate to separate the combination of said sacrificial layer, said epitaxial layer, and said carrier layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination of said epitaxial layer and said carrier layer from said growth substrate, preventing deformation of said epitaxial layer; placing said epitaxial layer over a position on a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 22
Dependent Claim
22 words
The process of claim 18, further comprising the step of selectively aligning said epitaxial layer with said position on said host substrate.
Claim 23
Dependent Claim
25 words
The process of claim 18, further comprising the step of defining device layers in said epitaxial layer by selectively removing regions of said epitaxial layer.
Claim 24
Dependent Claim
143 words
A process for lift-off of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate, said epitaxial layer being capable of separation from said carrier layer by altering the mechanical properties of said carrier layer; while separating said combination, maintaining the shape of said epitaxial layer so that said epitaxial layer remains substantially undisturbed; and utilizing a carrier material for said carrier layer which permits dissociation of said epitaxial layer from said carrier layer after separating said combination while maintaining said shape of said epitaxial layer so that said epitaxial layer remains undisturbed.
Claim 25
Dependent Claim
143 words
A process for lift-off of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate, said epitaxial layer being capable of separation from said carrier layer by altering the mechanical properties of said carrier layer; while separating said combination, maintaining the shape of said epitaxial layer so that said epitaxial layer remains substantially undisturbed; and utilizing a carrier material for said carrier layer which permits dissociation of said epitaxial layer from said carrier layer after separating said combination while maintaining said shape of said epitaxial layer so that said epitaxial layer remains undisturbed.
Claim 26
Dependent Claim
118 words
A process for lift-off and deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination, maintaining the shape of said epitaxial layer so that said epitaxial layer remains undisturbed; positioning said epitaxial layer over a position on a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 27
Dependent Claim
118 words
A process for lift-off and deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination, maintaining the shape of said epitaxial layer so that said epitaxial layer remains undisturbed; positioning said epitaxial layer over a position on a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 28
Dependent Claim
110 words
A process for lift-off and deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination, minimizing deformation of said epitaxial layer; positioning said epitaxial layer over a position on a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 29
Dependent Claim
110 words
A process for lift-off and deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination, minimizing deformation of said epitaxial layer; positioning said epitaxial layer over a position on a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 30
Dependent Claim
150 words
A process for lift-off and deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said growth substrate to separate the combination of said sacrificial layer, said epitaxial layer, and said carrier layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination of said epitaxial layer and said carrier layer from said growth substrate, maintaining the shape of said epitaxial layer so that said epitaxial layer remains undisturbed; positioning said epitaxial layer at a position over a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 31
Dependent Claim
150 words
A process for lift-off and deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said growth substrate to separate the combination of said sacrificial layer, said epitaxial layer, and said carrier layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination of said epitaxial layer and said carrier layer from said growth substrate, maintaining the shape of said epitaxial layer so that said epitaxial layer remains undisturbed; positioning said epitaxial layer at a position over a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 32
Dependent Claim
142 words
A process for lift-off and deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said growth substrate to separate the combination of said sacrificial layer, said epitaxial layer, and said carrier layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination of said epitaxial layer and said carrier layer from said growth substrate, minimizing deformation of said epitaxial layer; positioning said epitaxial layer at a position over a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
Claim 33
Dependent Claim
142 words
A process for lift-off and deposition of thin film epitaxial materials, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; coating all exposed sides of said epitaxial layer with a transparent carrier layer, thereby encapsulating said epitaxial layer; etching away said growth substrate to separate the combination of said sacrificial layer, said epitaxial layer, and said carrier layer; etching away said sacrificial layer to separate the combination of said epitaxial layer and said carrier layer from said growth substrate; while separating said combination of said epitaxial layer and said carrier layer from said growth substrate, minimizing deformation of said epitaxial layer; positioning said epitaxial layer at a position over a host substrate; and dissociating said carrier layer from said epitaxial layer to thereby deposit said epitaxial layer at said position on said host substrate.
References Cited (Backward Citations)
US3959045A
Cited
US4604160A
Cited
US4584039A
Cited
JPS62285432A
Cited
US4846931A
Cited
US5171712A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-14 | 1997-08-16 | 1998-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-14 | 2001-08-16 | 2002-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-14 | 2005-08-16 | 2006-02-15 | $7700.00 | Window Closed / Lapsed |