US5285099A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SiCr microfuses
Assignee: International Business Machines Corp
•
Filing: 1992-12-15
•
Granted: 1994-02-08
•
Expires: 2012-12-15
Abstract
Abstract A SiCr microfuse, deletable either by electrical voltage pulses or by laser pulses, for rerouting the various components in an integrated circuit, as where redundancy in array structures is implemented, and the method of fabricating same, at any wiring level of the chip, by utilizing a direct resist masking of the SiCr fuse layer to eliminate problems of mask damage and residual metal adjacent the fuse.
Inventors
- 👤 Roy A. Carruthers
- 👤 Fernand J. Dorleans
- 👤 John A. Fitzsimmons
- 👤 Richard Flitsch
- 👤 James A. Jubinsky
- 👤 Gerald R. Larsen
- 👤 Geraldine C. Schwartz
- 👤 Paul J. Tsang
- 👤 Robert W. Zielinski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:41
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10D; H10D84/00; H10D84/90; Y; Y10; Y10S; Y10S148/00; Y10S148/055
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
125 words
A microfuse structure fabricated within an integrated circuit (IC) which is deletable by either a low voltage electrical pulse or a laser pulse comprising: a substrate with a SiCr fuse deposited thereon having a target composition of approximately 28% Cr and 72% Si, said SiCr fuse being etched to a defined size and shape; a first layer of tungsten, W, having a thickness of between 50-200 nm and a layer of an aluminum (Al) alloy deposited over said SiCr fuse said W layer and Al alloy layer being etched to expose the SiCr fuse surface; a passivation layer deposited over the microfuse structure to a thickness of about 3.0 to 4.0 μm; and electrical contacts provided through said passivation layer to said Al alloy layer.
Claim 2
Dependent Claim
125 words
A microfuse structure fabricated within an integrated circuit (IC) which is deletable by either a low voltage electrical pulse or a laser pulse comprising: a substrate with a SiCr fuse deposited thereon having a target composition of approximately 28% Cr and 72% Si, said SiCr fuse being etched to a defined size and shape; a first layer of tungsten, W, having a thickness of between 50-200 nm and a layer of an aluminum (Al) alloy deposited over said SiCr fuse said W layer and Al alloy layer being etched to expose the SiCr fuse surface; a passivation layer deposited over the microfuse structure to a thickness of about 3.0 to 4.0 μm; and electrical contacts provided through said passivation layer to said Al alloy layer.
Claim 3
Dependent Claim
14 words
The microfuse structure of claim 1 wherein said Al alloy is a Ti/AlCu/Ti/AlCu alloy.
Claim 4
Dependent Claim
18 words
The microfuse structure of claim 1 wherein the thickness of the first W layer is approximately 100 nm.
Claim 5
Dependent Claim
56 words
The microfuse structure of claim 1 further comprising an intermediary W layer between said first W layer and the SiCr fuse, said intermediary W layer being initially etched to the size and shape of the microfuse and therafter being etched with said first W layer and said Al alloy layer to expose the SiCr fuse surface.
References Cited (Backward Citations)
US4951118A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-07 | 1997-08-09 | 1998-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-07 | 2001-08-09 | 2002-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-07 | 2005-08-09 | 2006-02-08 | $7700.00 | Window Closed / Lapsed |