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Patent US5283545A successfully refreshed from Google Patents.
US5283545A
Expired / Lapsed
US
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Variable resistors
Assignee: Dow Silicones Corp
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Filing: 1992-07-20
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Granted: 1994-02-01
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Expires: 2012-07-20
Abstract
Abstract This invention relates to a voltage pulse controlled variable resistor in which at least 2 leads are placed in direct contact with a material containing silica derived from hydrogen silsesquioxane. The resistor is formed by depositing a silica film derived from hydrogen silsesquioxane resin between at least two electrodes. The resistance of the component is varied by applying voltage pulses to the leads.
Inventors
- 👤 Udo C. Pernisz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:43
CPC Classifications
H; H01; H01H; H01H1/00; H01H1/02; G; G06; G06N; G06N3/00; G06N3/02; G06N3/06; G06N3/063; H10; H10B; H10B63/00; H10B63/80; H10B63/82; H10N; H10N70/00; H10N70/011; H10N70/021; H10N70/20; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/883; Y; Y10; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
24 words
A variable resistor comprising: at least 2 electrodes in direct contact with an oxide material comprising silica derived from a precursor comprising hydrogen silsesquioxane.
Claim 2
Dependent Claim
24 words
A variable resistor comprising: at least 2 electrodes in direct contact with an oxide material comprising silica derived from a precursor comprising hydrogen silsesquioxane.
Claim 3
Dependent Claim
14 words
The resistor of claim 1 wherein the resistor is placed in a non-oxidizing atmosphere.
Claim 4
Dependent Claim
51 words
The resistor of claim 1 wherein the oxide material is in the form of a film deposited by a process which comprises coating a substrate with a solution comprising hydrogen silsesquioxane in a solvent, evaporating the solvent to form a coating and then pyrolyzing the coating to form the oxide material.
Claim 5
Dependent Claim
25 words
The resistor of claim 3 wherein the coating is pyrolyzed at a temperature in the range of from about 100° C. to about 600° C.
Claim 6
Dependent Claim
39 words
The resistor of claim 3 wherein the solution also contains a platinum, rhodium or copper catalyst composition in an amount of about 5 to about 1000 ppm platinum, rhodium or copper based on the weight of hydrogen silsesquioxane resin.
Claim 7
Dependent Claim
19 words
The resistor of claim 1 wherein the electrodes are separated by a distance of less than about 5000 nm.
Claim 8
Dependent Claim
19 words
The resistor of claim 1 wherein the oxide material has a density between about 0.9 and about 2.1 g/cc.
Claim 9
Dependent Claim
30 words
The resistor of claim 1 wherein the electrodes are made of a material selected from the group consisting of gold, aluminum, silver, copper, platinum, nickel, cobalt, gallium arsenide, and silicon.
Claim 10
Dependent Claim
34 words
The resistor of claim 3 wherein the substrate is selected from the group consisting of gold, aluminum, silver, copper, platinum, nickel, cobalt, gallium arsenide, silicon, silicon carbide, silica, alumina, aluminum nitride, and silicon nitride.
Claim 11
Dependent Claim
14 words
The resistor of claim 1 wherein at least one electrode is made of gold.
Claim 12
Dependent Claim
18 words
The resistor of claim 1 wherein the oxide material is between about 50 and about 5000 nm thick.
Claim 13
Dependent Claim
18 words
The resistor of claim 1 wherein the oxide material is between about 100 and about 600 nm thick.
Claim 14
Dependent Claim
18 words
The resistor of claim 1 wherein one or more modifying ceramic oxides are incorporated in the oxide material.
Claim 15
Dependent Claim
54 words
The resistor of claim 13 wherein the modifying ceramic oxide comprises an oxide of one or more elements selected from the group consisting of iron, titanium, zirconium, aluminum, tantalum, vanadium, niobium, boron and phosphorous and is present in an amount such that the coating contains 0.1 to 30 percent by weight modifying ceramic oxide.
Claim 16
Dependent Claim
29 words
In a thin film variable resistor comprising at least 2 electrodes attached to a resistive element, the improvement comprises: using hydrogen silsesquioxane to form the thin film resistive element.
Claim 17
Dependent Claim
29 words
In a thin film variable resistor comprising at least 2 electrodes attached to a resistive element, the improvement comprises: using hydrogen silsesquioxane to form the thin film resistive element.
Claim 18
Dependent Claim
14 words
The resistor of claim 15 wherein the resistor is placed in a non-oxidizing atmosphere.
Claim 19
Dependent Claim
51 words
The resistor of claim 15 wherein the resistive element is in the form of a film deposited by a process which comprises coating a substrate with a solution comprising hydrogen silsesquioxane in a solvent, evaporating the solvent to form a coating and then pyrolyzing the coating to form the resistive element.
Claim 20
Dependent Claim
25 words
The resistor of claim 17 wherein the coating is pyrolyzed at a temperature in the range of from about 100° C. to about 600° C.
Claim 21
Dependent Claim
39 words
The resistor of claim 17 wherein the solution also contains a platinum, rhodium or copper catalyst composition in an amount of about 5 to about 1000 ppm platinum, rhodium or copper based on the weight of hydrogen silsesquioxane resin.
Claim 22
Dependent Claim
19 words
The resistor of claim 15 wherein the electrodes are separated by a distance of less than about 5000 nm.
Claim 23
Dependent Claim
19 words
The resistor of claim 15 wherein the resistive element has a density between about 0.9 and about 2.1 g/cc.
Claim 24
Dependent Claim
30 words
The resistor of claim 15 wherein the electrodes are made of a material selected from the group consisting of gold, aluminum, silver, copper, platinum, nickel, cobalt gallium arsenide, and silicon.
Claim 25
Dependent Claim
34 words
The resistor of claim 17 wherein the substrate is selected from the group consisting of gold, aluminum, silver, copper, platinum, nickel, cobalt, gallium arsenide, silicon, silicon carbide, silica, alumina, aluminum nitride, and silicon nitride.
Claim 26
Dependent Claim
12 words
The resistor of claim 15 wherein the electrodes are made of gold.
Claim 27
Dependent Claim
18 words
The resistor of claim 15 wherein the resistive element is between about 50 and about 5000 nm thick.
Claim 28
Dependent Claim
18 words
The resistor of claim 15 wherein the resistive element is between about 100 and about 600 nm thick.
Claim 29
Dependent Claim
18 words
The resistor of claim 15 wherein one or more modifying ceramic oxides are incorporated in the resistive element.
Claim 30
Dependent Claim
57 words
The resistor of claim 27 wherein the modifying ceramic oxide comprises an oxide of one or more elements selected from the group consisting of iron, titanium, zirconium, aluminum, tantalum, vanadium, niobium, boron and phosphorous and is present in an amount such that the resistive element contains 0.1 to 30 percent by weight of the modifying ceramic oxide.
Claim 31
Dependent Claim
9 words
An electronic circuit containing the resistor of claim 1.
Claim 32
Dependent Claim
9 words
An electronic circuit containing the resistor of claim 15.
References Cited (Backward Citations)
US4600685A
Cited
US4847162A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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