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US5282993A
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Light-stable semiconductor material based on amorphous germanium and a method for its production
Assignee: Siemens AG
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Filing: 1991-01-29
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Granted: 1994-02-01
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Expires: 2011-01-29
Abstract
Abstract An amorphous semiconductor material which does not age under the action of light is particularly suitable for red-sensitive photovoltaic components and is highly photosensitive. The amorphous semiconductor material is germanium based, particularly a silicon-germanium alloy. To this end, the semiconductor material has a compact, void-free structure, is manufactured in a glow discharge reactor by appropriate variation of the precipitation parameters, and contains one element from Group VI A of the periodic system.
Inventors
- 👤 Franz Karg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:29
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10F77/1665; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
81 words
A light-stable amorphous semiconductor material based on amorphous germanium, preferably for red-sensitive cells in photovoltaic components, consisting of 80 to 90 percent by atomic weight of Ge 1-x Si x , where 0≦×≦0.7, 5 to 20 percent by atomic weight of hydrogen, and oxygen in a concentration of 5×10 19 cm -3 to 2×10 21 cm -3 , the semiconductor material having a compact structure without demonstrable cavities and having a standardized photo-conductivity of more than 10 -7 cm 2 /Vs.
Claim 2
Dependent Claim
81 words
A light-stable amorphous semiconductor material based on amorphous germanium, preferably for red-sensitive cells in photovoltaic components, consisting of 80 to 90 percent by atomic weight of Ge 1-x Si x , where 0≦×≦0.7, 5 to 20 percent by atomic weight of hydrogen, and oxygen in a concentration of 5×10 19 cm -3 to 2×10 21 cm -3 , the semiconductor material having a compact structure without demonstrable cavities and having a standardized photo-conductivity of more than 10 -7 cm 2 /Vs.
Claim 3
Dependent Claim
21 words
The semiconductor material as claimed in claim 1, wherein the semiconductor material has an energy gap of 0.9 to 1.4 eV.
Claim 4
Dependent Claim
21 words
The semiconductor material as claimed in claim 1, wherein the semiconductor material contains no silicon, x being equal to zero [(X=0)].
Claim 5
Independent Claim
110 words
A method for producing a light-stable semiconductor material based on amorphous germanium on a substrate, preferably as a red-sensitive material for photovoltaic components, comprising the steps of: providing an atmosphere of at least 80 to 97.5 percent by atomic weight of hydrogen and 2.5 to 20 percent by atomic weight of germanium hydride at a pressure of 0.2 to 2 mbar and a substrate temperature of 100° to 300° C., carrying out a glow-discharge in such a manner that ion energy of ions impinging on the substrate is at least 100 eV, and subjecting the semiconductor material produced on the substrate to treatment with a gas containing at least oxygen.
Claim 6
Independent Claim
110 words
A method for producing a light-stable semiconductor material based on amorphous germanium on a substrate, preferably as a red-sensitive material for photovoltaic components, comprising the steps of: providing an atmosphere of at least 80 to 97.5 percent by atomic weight of hydrogen and 2.5 to 20 percent by atomic weight of germanium hydride at a pressure of 0.2 to 2 mbar and a substrate temperature of 100° to 300° C., carrying out a glow-discharge in such a manner that ion energy of ions impinging on the substrate is at least 100 eV, and subjecting the semiconductor material produced on the substrate to treatment with a gas containing at least oxygen.
Claim 7
Dependent Claim
26 words
The method as claimed in claim 4, wherein the glow-discharge is carried out in a glow discharge atmosphere which contains oxygen or a compound of oxygen.
Claim 8
Dependent Claim
35 words
The method as claimed in claim 4, wherein said treatment is carried out after deposition of the semiconductor material, and at a temperature in the region of the deposition temperature, for at least 10 minutes.
Claim 9
Dependent Claim
25 words
The method as claimed in claim 4, wherein said treatment is carried out after deposition of the semiconductor material, with a hydrogen plasma containing oxygen.
References Cited (Backward Citations)
JPS56122123A
Cited
DE3212184A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-01-31 | 1997-08-02 | 1998-02-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-31 | 2001-08-02 | 2002-02-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-31 | 2005-08-02 | 2006-02-01 | $7700.00 | Window Closed / Lapsed |