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US5281844A
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Avalanche photodiode
Assignee: Mitsubishi Electric Corp
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Filing: 1992-04-06
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Granted: 1994-01-25
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Expires: 2012-04-06
Abstract
Abstract A novel avalanche photodiode includes an n-type semiconductor substrate, an n-type light-absorbing layer on the substrate, an n-type multiplication layer on the light-absorbing layer, and a p-type light-receiving layer. The multiplication layer includes a plurality of pairs of semiconductor layers, with each pair including one high dopant impurity concentration layer and one low dopant impurity concentration layer.
Inventors
- 👤 Shinji Funaba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:18
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F30/2255
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
143 words
An avalanche photodiode comprising: a semiconductor substrate of a first conductivity type; a semiconductor light-absorbing layer of the first conductivity type disposed on said substrate; a multiplication layer of the first conductivity type disposed on said light-absorbing layer, said multiplication layer comprising a plurality of pairs of first and second semiconductor layers, each first semiconductor layer containing a first dopant impurity concentration and each second semiconductor layer containing a second dopant impurity concentration smaller than the first dopant impurity concentration, each of said first semiconductor layers having a dopant impurity concentration of about 5×10 16 cm -3 and a thickness of about 0.07 μm, each of said second semiconductor layers having a dopant impurity concentration of about 1×10 16 cm -3 and a thickness of about 0.23 μm; and a semiconductor light-receiving layer of a second conductivity type disposed on said multiplication layer.
Claim 2
Dependent Claim
143 words
An avalanche photodiode comprising: a semiconductor substrate of a first conductivity type; a semiconductor light-absorbing layer of the first conductivity type disposed on said substrate; a multiplication layer of the first conductivity type disposed on said light-absorbing layer, said multiplication layer comprising a plurality of pairs of first and second semiconductor layers, each first semiconductor layer containing a first dopant impurity concentration and each second semiconductor layer containing a second dopant impurity concentration smaller than the first dopant impurity concentration, each of said first semiconductor layers having a dopant impurity concentration of about 5×10 16 cm -3 and a thickness of about 0.07 μm, each of said second semiconductor layers having a dopant impurity concentration of about 1×10 16 cm -3 and a thickness of about 0.23 μm; and a semiconductor light-receiving layer of a second conductivity type disposed on said multiplication layer.
Claim 3
Dependent Claim
31 words
An avalanche photodiode according to claim 1 wherein the first semiconductor layer in each pair of layers is closer to said light-absorbing layer than the second semiconductor layer in that pair.
Claim 4
Dependent Claim
20 words
An avalanche photodiode according to claim 1 wherein said multiplication layer comprises four pairs of first and second semiconductor layers.
Claim 5
Dependent Claim
22 words
An avalanche photodiode according to claim 1 wherein said substrate, said light-absorbing layer, said multiplication layer, and said light-receiving layer are InP.
References Cited (Backward Citations)
US4684969A
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JPS61226973A
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JPS6248079A
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JPS63281480A
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JPH01261874A
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US5075750A
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| 3.5 Years (Year 4) | 1997-01-24 | 1997-07-26 | 1998-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-24 | 2001-07-26 | 2002-01-25 | $3760.00 | Window Closed / Lapsed |
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