US5281547A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a field effect transistor
Assignee: Oki Electric Industry Co Ltd
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Filing: 1990-03-28
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Granted: 1994-01-25
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Expires: 2010-03-28
Abstract
Abstract A field effect transistor of the present invention has in a base layer (33) a difference in levels constituted by an upper main surface (35a) a wall surface (35b) and a lower main surface (35c), the wall surface (35b) having a gate insulating film (39) and a gate electrode (41) in a sequential order at least in a direction extending from the upper main surface (35a) to the lower main surface (35c), the wall surface (35b) being provided, on both sides of the portions thereof corresponding to the gate insulating film (39) and gate electrode (41), with inpurity diffusion regions for forming of source and drain, respectively. Accordingly, the gate electrode (41) is provided in a manner that the gate width which needs to have a relatively large size is set in a direction vertical to the upper main surface of the base layer. This makes it possible to improve the degree of integration effectively.
Inventors
- 👤 Akira Uchiyama
- 👤 Takahisa Hayashi
- 👤 Toshiyuki Ochiai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:09
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/00; H10D30/01; H10D30/021; H10D30/026; H10D30/60; H10D30/62; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
164 words
A method for manufacturing a field effect transistor comprising steps in the following order of: (1) forming a difference in levels constituted by an upper main surface, a wall surface and a lower main surface in a semiconductor substrate; (2) forming an electrically conductive layer along an entire surface of said semiconductor substrate; (3) removing a portion of said electrically conductive layer other than a corresponding portion to said wall surface of said difference in levels by anisotropic etching; (4) forming a mask layer, in a direction from said upper main surface to said lower main surface, at a specified region of said electrically conductive layer remained on said wall surface; (5) selectively removing said electrically conductive layer by anisotropic etching performed from above said semiconductor substrate, with said mask layer used as a mask, thereby forming a gate electrode on said wall surface; and (6) performing impurity ion implantation with respect to said wall surface by using said gate electrode as a mask.
Claim 2
Independent Claim
164 words
A method for manufacturing a field effect transistor comprising steps in the following order of: (1) forming a difference in levels constituted by an upper main surface, a wall surface and a lower main surface in a semiconductor substrate; (2) forming an electrically conductive layer along an entire surface of said semiconductor substrate; (3) removing a portion of said electrically conductive layer other than a corresponding portion to said wall surface of said difference in levels by anisotropic etching; (4) forming a mask layer, in a direction from said upper main surface to said lower main surface, at a specified region of said electrically conductive layer remained on said wall surface; (5) selectively removing said electrically conductive layer by anisotropic etching performed from above said semiconductor substrate, with said mask layer used as a mask, thereby forming a gate electrode on said wall surface; and (6) performing impurity ion implantation with respect to said wall surface by using said gate electrode as a mask.
Claim 3
Independent Claim
193 words
A method for manufacturing a field effect transistor comprising steps in the following order of: (1) forming a difference in levels constituted by an upper main surface, a wall surface and a lower main surface in a semiconductor substrate; (2) forming an oxide film on a surface of said wall surface through thermal oxidation; (3) forming an electrically conductive layer along an entire surface of said semiconductor substrate including said difference in levels; (4) removing a portion of said electrically conductive layer other than a corresponding portion to said wall surface of said difference in levels, by anisotropic etching; (5) forming a mask layer, in a direction from said upper main surface to said lower main surface, at a specified region of said electrically conductive layer remained on said wall surface; (6) selectively removing said electrically conductive layer and said oxide film by anisotropic etching performed from above said semiconductor substrate, with said mask layer used as a mask, thereby forming a gate oxide film and a gate electrode on said wall surface; and (7) performing impurity ion implantation with respect to said wall surface by using said gate electrode as a mask.
Claim 4
Independent Claim
193 words
A method for manufacturing a field effect transistor comprising steps in the following order of: (1) forming a difference in levels constituted by an upper main surface, a wall surface and a lower main surface in a semiconductor substrate; (2) forming an oxide film on a surface of said wall surface through thermal oxidation; (3) forming an electrically conductive layer along an entire surface of said semiconductor substrate including said difference in levels; (4) removing a portion of said electrically conductive layer other than a corresponding portion to said wall surface of said difference in levels, by anisotropic etching; (5) forming a mask layer, in a direction from said upper main surface to said lower main surface, at a specified region of said electrically conductive layer remained on said wall surface; (6) selectively removing said electrically conductive layer and said oxide film by anisotropic etching performed from above said semiconductor substrate, with said mask layer used as a mask, thereby forming a gate oxide film and a gate electrode on said wall surface; and (7) performing impurity ion implantation with respect to said wall surface by using said gate electrode as a mask.
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