US5281485A
Expired / Lapsed
US
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Structure and method of making Alpha-Ta in thin films
Assignee: International Business Machines Corp
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Filing: 1993-01-15
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Granted: 1994-01-25
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Expires: 2013-01-15
Abstract
Abstract The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.
Inventors
- 👤 Evan G. Colgan
- 👤 Peter M. Fryer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/045; C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10P; H10P14/00; H10P14/40; H10P14/418; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9335; Y10S428/938; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
96 words
A product made by forming an alpha-Ta layer that does not contain any detectable amount of nitrogen on a substrate comprising the steps of: (a) forming a seed layer of tantalum doped with nitrogen (Ta(N)), reactively sputtered in a nitrogen containing ambient, on said substrate, wherein said seed layer has a thickness of at least 20 angstroms, and (b) depositing a layer of alpha-Ta on said Ta(N) seed layer in a nitrogen free ambient, wherein said layer or alpha-Ta does not contain any detectable amount of nitrogen and has a resistivity of less than 50 micro-ohm-cm.
Claim 2
Dependent Claim
96 words
A product made by forming an alpha-Ta layer that does not contain any detectable amount of nitrogen on a substrate comprising the steps of: (a) forming a seed layer of tantalum doped with nitrogen (Ta(N)), reactively sputtered in a nitrogen containing ambient, on said substrate, wherein said seed layer has a thickness of at least 20 angstroms, and (b) depositing a layer of alpha-Ta on said Ta(N) seed layer in a nitrogen free ambient, wherein said layer or alpha-Ta does not contain any detectable amount of nitrogen and has a resistivity of less than 50 micro-ohm-cm.
Claim 3
Dependent Claim
98 words
An article of manufacture made by forming an alpha-Ta layer that does not contain any detectable amount of nitrogen on a substrate comprising the steps of: (a) forming a seed layer of tantalum doped with nitrogen (Ta(N)), reactively sputtered in a nitrogen containing ambient, on said substrate, wherein said seed layer has a thickness of at least 20 angstroms, and (b) depositing a layer of alpha-Ta on said (Ta(N) seed layer in a nitrogen free ambient, wherein said layer of alpha-Ta does not contain any detectable amount of nitrogen and has a resistivity of less than 50 micro-ohm-cm.
Claim 4
Dependent Claim
98 words
An article of manufacture made by forming an alpha-Ta layer that does not contain any detectable amount of nitrogen on a substrate comprising the steps of: (a) forming a seed layer of tantalum doped with nitrogen (Ta(N)), reactively sputtered in a nitrogen containing ambient, on said substrate, wherein said seed layer has a thickness of at least 20 angstroms, and (b) depositing a layer of alpha-Ta on said (Ta(N) seed layer in a nitrogen free ambient, wherein said layer of alpha-Ta does not contain any detectable amount of nitrogen and has a resistivity of less than 50 micro-ohm-cm.
Claim 5
Dependent Claim
60 words
A structure comprising a seed layer of tantalum doped with nitrogen (Ta(N)) on a substrate, wherein said seed layer has a thickness of at least 20 angstroms, and having a layer of alpha-Ta on said Ta(N) seed layer, wherein said layer of alpha-Ta does not contain any detectable amount of nitrogen and has a resistivity of less than 50 micro-ohm-cm.
Claim 6
Dependent Claim
60 words
A structure comprising a seed layer of tantalum doped with nitrogen (Ta(N)) on a substrate, wherein said seed layer has a thickness of at least 20 angstroms, and having a layer of alpha-Ta on said Ta(N) seed layer, wherein said layer of alpha-Ta does not contain any detectable amount of nitrogen and has a resistivity of less than 50 micro-ohm-cm.
Claim 7
Dependent Claim
16 words
The structure of claim 3, wherein said layer of alpha-Ta is at least 100 angstroms thick.
Claim 8
Dependent Claim
25 words
The structure of claim 3, wherein the total thickness of said Ta(N) seed layer and said alpha-Ta layer is between 100 angstroms and 4,000 angstroms.
Claim 9
Dependent Claim
25 words
The structure of claim 3, wherein the total thickness of said Ta(N) seed layer and said alpha-Ta layer is between 500 angstroms and 2,000 angstroms.
Claim 10
Dependent Claim
52 words
A structure comprising a seed layer of tantalum doped with nitrogen (Ta(N)) on a substrate, and having a layer of alpha-Ta on said Ta(N) seed layer, wherein said seed layer of Ta(N) is at least 20 angstroms thick, and wherein said layer of alpha-Ta has a resistivity of less than 50 micro-ohm-cm.
Claim 11
Dependent Claim
52 words
A structure comprising a seed layer of tantalum doped with nitrogen (Ta(N)) on a substrate, and having a layer of alpha-Ta on said Ta(N) seed layer, wherein said seed layer of Ta(N) is at least 20 angstroms thick, and wherein said layer of alpha-Ta has a resistivity of less than 50 micro-ohm-cm.
Claim 12
Dependent Claim
16 words
The structure of claim 7, wherein said layer of alpha-Ta is at least 100 angstroms thick.
Claim 13
Dependent Claim
25 words
The structure of claim 7, wherein the total thickness of aid Ta(N) seed layer and said alpha-Ta layer is between 100 angstroms and 4,000 angstroms.
Claim 14
Dependent Claim
25 words
The structure of claim 7, wherein the total thickness of said Ta(N) seed layer and said alpha-Ta layer is between 500 angstroms and 2,000 angstroms.
Claim 15
Dependent Claim
20 words
The structure of claim 3, wherein the resistivity of said alpha-Ta layer is equal to or less than 40 micro-ohm-cm.
Claim 16
Dependent Claim
20 words
The product of claim 1, wherein the resistivity of said alpha-Ta layer is equal to or less than 40 micro-ohm-cm.
Claim 17
Dependent Claim
22 words
The article of manufacture of claim 2, wherein the resistivity of said alpha-Ta layer is equal to or less than 40 micro-ohm-cm.
Claim 18
Dependent Claim
20 words
The structure of claim 7, wherein the resistivity of said alpha-Ta layer is equal to or less than 40 micro-ohm-cm.
Claim 19
Dependent Claim
20 words
The product of claim 1, wherein said seed layer of Ta(N) preferably contains between 0.1 and 50.0 atomic percent nitrogen.
Claim 20
Dependent Claim
22 words
The article of manufacture of claim 2, wherein said seed layer of Ta(N) preferably contains between 0.1 and 50.0 atomic percent nitrogen.
Claim 21
Dependent Claim
20 words
The structure of claim 3, wherein said seed layer of Ta(N) preferably contains between 0.1 and 50.0 atomic percent nitrogen.
Claim 22
Dependent Claim
20 words
The structure of claim 7, wherein said seed layer of Ta(N) preferably contains between 0.1 and 50.0 atomic percent nitrogen.
Claim 23
Dependent Claim
20 words
The structure of claim 3, wherein said seed layer of Ta(N) preferably contains between 0.1 and 35.0 atomic percent nitrogen.
Claim 24
Dependent Claim
20 words
The structure of claim 7, wherein said seed layer of Ta(N) preferably contains between 0.1 and 35.0 atomic percent nitrogen.
Claim 25
Dependent Claim
19 words
The product of claim 1, wherein said seed layer of Ta(N) contains between 1 and 35 atomic percent nitrogen.
Claim 26
Dependent Claim
21 words
The article of manufacture of claim 2, wherein said seed layer of Ta(N) contains between 1 and 35 atomic percent nitrogen.
Claim 27
Dependent Claim
19 words
The structure of claim 3, wherein said seed layer of Ta(N) contains between 1 and 35 atomic percent nitrogen.
Claim 28
Dependent Claim
19 words
The structure of claim 7, wherein said seed layer of Ta(N) contains between 1 and 35 atomic percent nitrogen.
Claim 29
Dependent Claim
19 words
The structure of claim 3, wherein said seed layer of Ta(N) contains between 0.1 and 1.0 atomic percent nitrogen.
Claim 30
Dependent Claim
19 words
The structure of claim 7, wherein said seed layer of Ta(N) contains between 0.1 and 1.0 atomic percent nitrogen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-01-24 | 1997-07-26 | 1998-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-24 | 2001-07-26 | 2002-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-24 | 2005-07-26 | 2006-01-25 | $7700.00 | Window Closed / Lapsed |