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US5275976A Expired / Lapsed US ⏱️ 0.0 years remaining

Process chamber purge module for semiconductor processing equipment

Assignee: Texas Instruments Inc
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Filing: 1990-12-27
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Granted: 1994-01-04
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Expires: 2010-12-27
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Abstract

Abstract A process chamber purge module (56) is provided, including a stack module (60) and a process chamber liner (62). The stack module comprises a plurality of quartz plates (100, 110, and 116) having flow apertures to permit radial and axial flow of a purge gas to the backside of a semiconductor wafer (18). The process chamber liner (62) isolates the process chamber walls from the process chamber process environment by flowing between the liner and the walls a portion of the purge gas. Process chamber liner (62) comprises a quartz cylindrical collar that operates to decouple the process chamber (16) process environment (20) from the process chamber collar walls (42). The stack module (60) decouples the process chamber optical/vacuum quartz window (64) from the semiconductor wafer (18) during a heated semiconductor wafer fabrication process. By flowing purge gas to the backside of the semiconductor wafer (18), the present invention prevents reactive process gas interaction with the semiconductor wafer backside.

Inventors

  • 👤 Mehrdad M. Moslehi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:58
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/481; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; C30B31/00; C30B31/06; C30B31/12; C30B31/16; Y; Y10; Y10S; Y10S438/00; Y10S438/905; Y10S438/909

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 118 words
A method for purging from a side of a semiconductor wafer reactive process gases when said wafer is positioned within a semiconductor wafer fabrication reactor process chamber, comprising the steps of: placing a layered stack of windows each operable for passing heat energy therethrough in a process chamber; flowing a purge gas through channels in said windows from one window to the next adjacent window; maintaining a gap between said windows and permitting a portion of said gas to move radially and axially within said gap; receiving said purge gas at an inlet port of said layered stack and passing at least a portion of said received purge gas through an outlet in said layered stack of windows.
Claim 2
Independent Claim 118 words
A method for purging from a side of a semiconductor wafer reactive process gases when said wafer is positioned within a semiconductor wafer fabrication reactor process chamber, comprising the steps of: placing a layered stack of windows each operable for passing heat energy therethrough in a process chamber; flowing a purge gas through channels in said windows from one window to the next adjacent window; maintaining a gap between said windows and permitting a portion of said gas to move radially and axially within said gap; receiving said purge gas at an inlet port of said layered stack and passing at least a portion of said received purge gas through an outlet in said layered stack of windows.
Claim 3
Dependent Claim 31 words
The method of claim 1, further comprising the step of passing at least a portion of said purge gas between a purge liner and the interior walls of said process chamber.
Claim 4
Dependent Claim 27 words
The method of claim 2, further comprising the step of isolating the optical window of a semiconductor device fabrication reactor process chamber from a heated semiconductor wafer.
Claim 5
Dependent Claim 28 words
The method of claim 1, further comprising the step of configuring said radial and axial flow distribution apertures to direct flow radially and axially to the semiconductor wafer.
Claim 6
Dependent Claim 16 words
The method of claim 1, wherein said layered stack of windows comprises an optically transparent material.
Claim 7
Dependent Claim 15 words
The method of claim 1, wherein said layered stack of windows comprises a quartz material.
Claim 8
Dependent Claim 14 words
The method of claim 1, wherein said purge liner comprises a pure inert material.
Claim 9
Dependent Claim 13 words
The method of claim 1, wherein said purge liner comprises a quartz material.
Claim 10
Dependent Claim 26 words
The method of claim 2, further comprising the step of purge pressing liner against said window stack with a compressive force to establish a seal therebetween.
Claim 11
Dependent Claim 26 words
The method of claim 1, further comprising the step of permitting variations in gas flow through said window stack with a variable purge gas flow aperture.

References Cited (Backward Citations)

US4503807A Cited
US4736705A Cited
US4792378A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-01-03 1997-07-05 1998-01-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-01-03 2001-07-05 2002-01-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-01-03 2005-07-05 2006-01-04 $7700.00 Window Closed / Lapsed

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