US5275969A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Mitsubishi Electric Corp
•
Filing: 1993-04-07
•
Granted: 1994-01-04
•
Expires: 2013-04-07
Abstract
Abstract A method for diffusing a P type impurity into a semiconductor includes the steps of selectively implanting ions of a first P type impurity into a semiconductor substrate and thermally diffusing a second P type impurity into the semiconductor substrate containing at least a region where the first P type impurity ions are implanted. Therefore, the diffusion speed of the P type impurity is increased in the ion implantation region, whereby the P type impurity diffusion region which almost corresponds to the ion implantation region can be obtained and P type diffusion can be performed in high concentration with high precision.
Inventors
- 👤 Shogo Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:30
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/17; H10P32/174; Y; Y10; Y10S; Y10S148/00; Y10S148/035
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
117 words
A semiconductor laser of diffusion stripe (DS) type comprising: an n type semiconductor cladding layer, a semiconductor active layer, a p type semiconductor cladding layer, an n type semiconductor layer, and a p type semiconductor contact layer sequentially disposed on an n type semiconductor substrate; and a diffusion stripe penetrating said active layer and reaching said n type semiconductor cladding layer including implanted ions of a first dopant impurity producing P type conductivity, said implanted ions extending from said contact layer in an impurity ion implantation region and a second dopant impurity producing P type conductivity different from the first dopant impurity producing P type conductivity in a thermally diffused region within said impurity ion implantation region.
Claim 2
Dependent Claim
117 words
A semiconductor laser of diffusion stripe (DS) type comprising: an n type semiconductor cladding layer, a semiconductor active layer, a p type semiconductor cladding layer, an n type semiconductor layer, and a p type semiconductor contact layer sequentially disposed on an n type semiconductor substrate; and a diffusion stripe penetrating said active layer and reaching said n type semiconductor cladding layer including implanted ions of a first dopant impurity producing P type conductivity, said implanted ions extending from said contact layer in an impurity ion implantation region and a second dopant impurity producing P type conductivity different from the first dopant impurity producing P type conductivity in a thermally diffused region within said impurity ion implantation region.
Claim 3
Dependent Claim
39 words
The semiconductor laser in accordance with claim 1 wherein said substrate, said active layer, and said contact layer are GaAs and said n type cladding layer, said p type cladding layer, and said n type semiconductor layer are AlGaAs.
Claim 4
Dependent Claim
30 words
The semiconductor laser in accordance with claim 2 wherein said first dopant impurity producing P type conductivity is Be and said second dopant impurity producing P type conductivity is Zn.
References Cited (Backward Citations)
US4517674A
Cited
US4960730A
Cited
US5108949A
Cited
US4980313A
Cited
US5116769A
Cited
EP0480557A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-03 | 1997-07-05 | 1998-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-03 | 2001-07-05 | 2002-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-03 | 2005-07-05 | 2006-01-04 | $7700.00 | Window Closed / Lapsed |