US5116769A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a semiconductor laser by implanting impurities which suppress disordering
Assignee: Mitsubishi Electric Corp
•
Filing: 1991-03-22
•
Granted: 1992-05-26
•
Expires: 2011-03-22
Abstract
Abstract A semiconductor laser device including a substrate containing a groove through which the laser light is emitted, a first layer disposed between the substrate and an active layer including a superlattice region opposite the groove and having the same conductivity type as the region in the sides walls of the groove and a disordered region in the first layer adjacent the superlattice of a different conductivity type from that of the superlattice region for confining current flow from the substrate to the active layer. A method of producing the semiconductor laser device includes implanting impurity ions which change the conductivity type but suppress the disordering of the superlattice region after annealing. The ions are implanted through the groove and produce the desired conductivity type region in the side walls of the groove.
Inventors
- 👤 Yoshito Seiwa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 00:38
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18308; B; B82; B82Y; B82Y20/00; H01S5/02; H01S5/0206; H01S5/0207; H01S5/18305; H01S5/18322; H01S5/18327; H01S5/20; H01S5/2054; H01S5/2059; H01S5/2063; H01S5/2068
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
172 words
A method of producing a semiconductor laser device comprising: successively epitaxially growing an etching stopping layer, a first conductivity type superlattice structure, a second conductivity type cladding layer, an active layer, and a first conductivity type cladding layer on a substrate; producing a current confinement structure in said first conductivity type cladding layer; etching a groove in said substrate reaching said etching stopping layer opposite said current confinement structure; implanting dopant impurity ions which suppress disordering of said superlattice structure and are activated to a second conductivity type by annealing in the superlattice structure through said groove so that said dopant impurity ions reach said second conductivity type cladding layer opposite said groove but do not reach said first conductivity type cladding layer and remain in said substrate at the side walls of said groove; and annealing to disorder said superlattice structure at a region beyond the groove where said dopant impurity ions are not implanted and converting the region of the superlattice structure opposite the groove to the second conductivity type.
Claim 2
Independent Claim
172 words
A method of producing a semiconductor laser device comprising: successively epitaxially growing an etching stopping layer, a first conductivity type superlattice structure, a second conductivity type cladding layer, an active layer, and a first conductivity type cladding layer on a substrate; producing a current confinement structure in said first conductivity type cladding layer; etching a groove in said substrate reaching said etching stopping layer opposite said current confinement structure; implanting dopant impurity ions which suppress disordering of said superlattice structure and are activated to a second conductivity type by annealing in the superlattice structure through said groove so that said dopant impurity ions reach said second conductivity type cladding layer opposite said groove but do not reach said first conductivity type cladding layer and remain in said substrate at the side walls of said groove; and annealing to disorder said superlattice structure at a region beyond the groove where said dopant impurity ions are not implanted and converting the region of the superlattice structure opposite the groove to the second conductivity type.
Claim 3
Dependent Claim
37 words
A method of producing a semiconductor laser device as defined in claim 1 wherein said substrate comprises n type GaAs including growing AlGaAs as said etching stopping layer and AlGaAs/AlAs layers containing Si as said superlattice structure.
Claim 4
Dependent Claim
25 words
A method of producing a semiconductor laser device as defined in claim 2 including growing p type AlGaAs as said second conductivity type cladding layer.
Claim 5
Dependent Claim
27 words
A method of producing a semiconductor laser device as defined in claim 2 including growing a Be doped AlGaAs/AlAs superlattice as said second conductivity type cladding layer.
Claim 6
Dependent Claim
33 words
A method of producing a semiconductor laser device as defined in claim 2 wherein said second cladding layer comprises a Zn doped AlGaAs/AlAs superlattice layer including disordering the second cladding layer by annealing.
Claim 7
Dependent Claim
21 words
A method of producing a semiconductor laser device as defined in claim 2 including implanting Be as said dopant impurity ions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-26 | 1995-11-25 | 1996-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-26 | 1999-11-25 | 2000-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-26 | 2003-11-25 | 2004-05-26 | $7700.00 | Window Closed / Lapsed |