US4494995A
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Dual species ion implantation of ternary compounds based on In-Ga-As
Assignee: United States Department of the Navy
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Filing: 1983-03-01
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Granted: 1985-01-22
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Expires: 2003-03-01
Abstract
Abstract A method for Ion implantation using multiple energy Be+ to produce p-type regions in n-In0.53Ga0.47As. A simple technique is used to develop capless annealing of InGaAs up to 700 DEG C. The ion implantation of silicon is then accomplished to create n+ layers in previously Be-implanted InGaAs epilayers. The active efficiency of 40% for 50 KeV Be implant has been found and efficiencies of 86% and 38% are found for the low and high energy Si implants respectively.
Inventors
- 👤 Kamal Tabatabaie-Alavi
- 👤 Abu N. M. M. Choudhury
- 👤 Nancy J. Slater Gabriel
- 👤 Clifton G. Fonstad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:29
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/206; H10P30/28
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
65 words
A method for ion implanting using multiple energy Be + to produce p-type regions in an n-In 0 .53 Ga 0 .47 As substrate and thereafter implanting Si in Be-implanted InGaAs epilayers to produce n + -p-n structure which includes the steps of: implanting Be + in said n-InGaAs substrate; annealing Be + implanted n-InGaAs substrate; and implanting Si in Be + implanted n-InGaAs substrate.
Claim 2
Independent Claim
65 words
A method for ion implanting using multiple energy Be + to produce p-type regions in an n-In 0 .53 Ga 0 .47 As substrate and thereafter implanting Si in Be-implanted InGaAs epilayers to produce n + -p-n structure which includes the steps of: implanting Be + in said n-InGaAs substrate; annealing Be + implanted n-InGaAs substrate; and implanting Si in Be + implanted n-InGaAs substrate.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein the step of implanting Be + in said n-InGaAs further includes using multiple Be + energy ions to obtain different types of p-type layers.
Claim 4
Dependent Claim
23 words
The method of claim 2 wherein the step of annealing further includes sandwiching the implanted InGaAs between two pieces of mechanically lapped InAs.
Claim 5
Dependent Claim
26 words
The method of claim 3 wherein the step of annealing further includes using a mixture of argon and hydrogen as a forming gas during the annealing.
Claim 6
Dependent Claim
26 words
The mcthod of claim 4 which further includes the step of plating Au-Zn-Au on n + -p-n structure to form ohmic contact to the p-type material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-22 | 1988-07-23 | 1989-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-22 | 1992-07-23 | 1993-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-22 | 1996-07-23 | 1997-01-22 | $7700.00 | Window Closed / Lapsed |