Flash-type nonvolatile semiconductor memory having precise erasing levels

Claim 2

An electrically erasable nonvolatile semiconductor memory of a batch erasure type comprising: a plurality of word lines; a plurality of pairs of bit lines and source lines arranged perpendicular to said word lines; a matrix of memory cells arranged at intersections of said word lines and said pairs of said bit lines and said source lines, each of said memory cells including a floating gate, a control gate connected to one of said word lines, a first diffusion region connected to one of said bit lines and a second diffusion region connected to one of said source lines; a plurality of level judging circuits respectively arranged at said bit lines, each level judging circuit detects whether or not a selected memory cell connected to the selected word line turns ON when read voltages are applied to said selected memory cells and stores a switching signal corresponding to said detected result; and a plurality of source line switch circuits respectively arranged at said source lines, each of which circuits switches said source line to be connected to an erasing voltage source or to the ground according to said switching signal of the corresponding level judging circuit; wherein, an erasing operation is carried out with a first erasing process in which no memory cell is over-erased; a sensing process to detect and store a state of every selected memory cells in every level judging circuit; a re-erasing process to selectively apply erasing high voltages to source lines by being controlled with each source line switch circuit; a repeating process to repeat said sensing process and said re-erasing process until every selected memory cells connected to the selected word line turn ON when read voltages are applied to said selected memory cells; and a process to carry out said sensing process, said re-erasing process and said repeating process to every word line in a block of memory cells to which the erase operation being carried out.

Claim 3

A memory as set forth in claim 1, wherein, said erasing voltage source is compose of a plurality of erasing voltage source elements, and each of said erasing voltage source elements is arranged corresponding with said source line switch.

Claim 4

A memory as set forth in claim 1, said memory comprises one or more erasing voltage supply lines, and said source line switches are connected to one of said erasing voltage supply line.

Claim 5

A memory as set forth in claim 3, said source line switch includes a transfer gate transistor connected between said source line and said erasing voltage sipply line and a reset transistor connected between said source line and a ground, and an ON resistance of said transfer gate transistor is sufficiently larger than that of said reset transistor.

Claim 6

A memory as set forth in claim 1, wherein each of said level judging circuits comprises a flip-flop circuit and a dummy cell having a predetermined threshold level, said bit line and said dummy cell are respectively connected to two output nodes of said flip-flop circuit, and said switching signal can be obtained by detecting a difference of threshold levels between said selected memory cell and said dummy cell.

Claim 7

A memory as set forth in claim 5, wherein said level judging circuits are commonly use as sense amplifiers in a read operation.

Claim 8

A memory as set forth in claim 6, wherein said sense amplifiers are independently controllable, and voltage applications to bit lines in a writing operation are carried out by said sense amplifiers.

Claim 9

A memory as set forth in claim 6, wherein pairs of said sense amplifier and said source line switch circuit are arranged in both sides of said matrix of memory cells, and pairs of said bit line and said source line are mutually connected to said pairs of said sense amplifiers and said source line switches.

Claim 10

A memory as set forth in claim 1, wherein a minus voltage is applied to said control gate of each memory cell in an erasing operation.

Claim 11

A memory as set forth in claim 1, wherein, in a writing operation, a first voltage is applied to a selected word line; a second voltage is applied other word lines except said selected word line; said second voltage is applied to a selected bit line and a selected source line; a third voltage is applied to other bit lines and source lines except said selected bit line and said selected source line; and said third voltage is between said first voltage and said second voltage.

Claim 12

An electrically erasable nonvolatile semiconductor memory of a batch erasure type comprising: a plurality of word lines; a plurality of pairs of bit lines and source lines arranged perpendicular to said word lines; a matrix of memory cells arranged at intersections of said word lines and said pairs of said bit lines and said source lines, each of said memory cells including a floating gate, a control gate connected to one of said word lines, a first diffusion region connected to one of said bit lines and a second diffusion region connected to one of said source lines; a plurality of level judging circuits respectively arranged at said bit lines, each level judging circuit detects whether or not a selected memory cell connected to the selected word line turns ON when read voltages are applied to said selected memory cells and stores a switching signal corresponding to said detected result; and a plurality of source line switch circuits respectively arranged at said source lines, each of which circuits switches said source line to be connected to an erasing voltage source or to the ground according to said switching signal of the corresponding level judging circuit; wherein, a writing operation is carried out with a first writing process in which electrons are injected into said floating gate without no memory cell is over a predetermined level; a sensing process to detect and store a state of every selected memory cells in every level judging circuit; a re-writing process to selectively apply high voltages to source lines by being controlled with each source line switch circuit; a repeating process to repeat said sensing process and said re-wrising process until every selected memory cells connected to the selected word line turn ON when read voltages are applied to said selected memory cells; and a process to carry out said sensing process, said re-erasing process and said repeating process to every word line in a block of memory cells to which the erase operation being carried out, and in an erasing operation, electrons are injected into said floating gate.

Claim 13

An electrically erasable nonvolatile semiconductor memory of a batch erasure type comprising: a plurality of word lines; a plurality of pairs of bit lines and source lines arranged perpendicular to said word lines; a matrix of memory cells arranged at intersections of said word lines and said pairs of said bit lines and said source lines, each of said memory cells including a floating gate, a control gate connected to one of said word lines, a first diffusion region connected to one of said bit lines and a second diffusion region connected to one of said source lines; a plurality of level judging circuits respectively arranged at said bit lines, each level judging circuit detects whether or not a selected memory cell connected to the selected word line turns ON when read voltages are applied to said selected memory cells and stores a switching signal corresponding to said detected result; and a plurality of source line switch circuits respectively arranged at said source lines, each of which circuits switches said source line to be connected to an erasing voltage source or to the ground according to said switching signal of the corresponding level judging circuit; wherein, a writing operation is carried out with a first writing process in which electrons are injected into said floating gate without no memory cell is over a predetermined level; a sensing process to detect and store a state of every selected memory cells in every level judging circuit; a re-writing process to selectively apply high voltages to source lines by being controlled with each source line switch circuit; a repeating process to repeat said sensing process and said re-wrising process until every selected memory cells connected to the selected word line turn ON when read voltages are applied to said selected memory cells; and a process to carry out said sensing process, said re-erasing process and said repeating process to every word line in a block of memory cells to which the erase operation being carried out, and in an erasing operation, electrons are injected into said floating gate.