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US5273783A
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Chemical vapor deposition of titanium and titanium containing films using bis (2,4-dimethylpentadienyl) titanium as a precursor
Assignee: Micron Technology Inc
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Filing: 1993-03-24
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Granted: 1993-12-28
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Expires: 2013-03-24
Abstract
Abstract A process is disclosed for creating highly-conformal titanium-containing films via chemical vapor deposition using bis(2,4-dimethylpentadienyl) titanium, an analog thereof, or a Lewis-base-stabilized form thereof, as a precursor. The deposition process takes place in a low-pressure chamber. A substrate within the chamber, and on which the film is to be deposited, is heated to a temperature within a range of about 300-600° C. In one embodiment of the invention, titanium precursor compound vapor is admitted to the chamber either solely or in combination with one or more carrier gases. In another embodiment, titanium precursor compound vapor in combination with one or more carrier gases and/or other vapor phase reactants are admitted to the chamber.
Inventors
- 👤 Brenda D. Wanner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
98 words
A chemical vapor deposition process for depositing a titanium-containing film on a substrate comprising the steps of: (1) disposing the substrate within a chemical vapor deposition chamber; (2) introducing a vaporized organometallic precursor compound into said chamber, said precursor compound being selected from the group consisting of bis(2,4-dimethylpentadienyl)titanium, an analog of bis(2,4-dimethylpentadienyl)titanium, and bis(2,4-dimethylpentadienyl)titanium in combination with a Lewis base; and (3) heating the substrate to a temperature sufficient to cause said vaporized precursor compound to decompose at the surface of the substrate, thereby resulting in the deposition of the titanium-containing film on the surface of the substrate.
Claim 2
Dependent Claim
98 words
A chemical vapor deposition process for depositing a titanium-containing film on a substrate comprising the steps of: (1) disposing the substrate within a chemical vapor deposition chamber; (2) introducing a vaporized organometallic precursor compound into said chamber, said precursor compound being selected from the group consisting of bis(2,4-dimethylpentadienyl)titanium, an analog of bis(2,4-dimethylpentadienyl)titanium, and bis(2,4-dimethylpentadienyl)titanium in combination with a Lewis base; and (3) heating the substrate to a temperature sufficient to cause said vaporized precursor compound to decompose at the surface of the substrate, thereby resulting in the deposition of the titanium-containing film on the surface of the substrate.
Claim 3
Dependent Claim
30 words
The process of claim 1, wherein said Lewis base is selected from the group consisting of NH 3 , CN-, and H 2 N--CH 2 --CH 2 --NH 2 .
Claim 4
Dependent Claim
12 words
The process of claim 1, wherein said substrate is a semiconductor wafer.
Claim 5
Dependent Claim
26 words
The process of claim 1, wherein said substrate is positioned on a heated susceptor plate, and heat is transferred from said susceptor plate to said substrate.
Claim 6
Dependent Claim
23 words
The process of claim 1, wherein a reducing agent is introduced into said chamber simultaneously with the introduction of said vaporized precursor compound.
Claim 7
Dependent Claim
12 words
The process of claim 5, wherein said reducing agent is ammonia gas.
Claim 8
Dependent Claim
13 words
The process of claim 5, wherein said reducing agent is a silicon-containing compound.
Claim 9
Dependent Claim
11 words
The process of claim 5, wherein said reducing agent is chlorine.
Claim 10
Dependent Claim
11 words
The process of claim 5, wherein said reducing agent is fluorine.
Claim 11
Dependent Claim
11 words
The process of claim 5, wherein said reducing agent is hydrogen.
Claim 12
Dependent Claim
19 words
The process of claim 3, wherein said wafer is heated to a temperature within a range of 200-600° C.
Claim 13
Dependent Claim
17 words
The process of claim 11, wherein said wafer is heated to a temperature of about 420° C.
Claim 14
Dependent Claim
21 words
The process of claim 1, wherein said vaporized precursor compound is transported to the chamber via at least one carrier gas.
Claim 15
Dependent Claim
19 words
The process of claim 13, wherein said precursor compound is introduced into said carrier gas in a bubbler apparatus.
Claim 16
Dependent Claim
13 words
The process of claim 13, wherein said carrier gas is a noble gas.
Claim 17
Dependent Claim
16 words
The process of claim 13, wherein said at least one carrier gas is N 2 .
Claim 18
Dependent Claim
24 words
The process of claim 14, wherein said precursor compound within said bubbler apparatus is maintained at a temperature in excess of its sublimation temperature.
Claim 19
Dependent Claim
24 words
The process of claim 4, wherein reaction products from the decomposition of the precursor compound are removed from the chamber as the reaction proceeds.
Claim 20
Dependent Claim
24 words
The process of claim 4, wherein the walls of said chamber are maintained at a temperature that is insufficient to decompose the precursor compound.
Claim 21
Dependent Claim
24 words
The process of claim 4, wherein the pressure within the chamber is maintained at a pressure within a range of 0.1 to 1.0 torr.
Claim 22
Dependent Claim
20 words
The process of claim 20, wherein the pressure within the chamber is maintained at a pressure of about 0.5 torr.
Claim 23
Dependent Claim
11 words
The process of claim 7, wherein said silicon-containing compound is silane.
Claim 24
Dependent Claim
11 words
The process of claim 7, wherein said silicon-containing compound is disilane.
References Cited (Backward Citations)
US5130172A
Cited
US5192589A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-27 | 1997-06-28 | 1997-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-27 | 2001-06-28 | 2001-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-27 | 2005-06-28 | 2005-12-28 | $7700.00 | Window Closed / Lapsed |