Patent US5272111A successfully refreshed from Google Patents.
US5272111A
Expired / Lapsed
US
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Method for manufacturing semiconductor device contact
Assignee: Mitsubishi Electric Corp
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Filing: 1991-10-21
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Granted: 1993-12-21
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Expires: 2011-10-21
Abstract
Abstract An amorphous Ni-P layer which nullifies the effects of the crystallinity of a base metal layer is formed on the base metal layer in a metallic element of a field effect transistor by electroless plating. An electrolytic Au layer is deposited on the amorphous Ni-P layer. Thus, there are no luster nonuniformities in the electrolytic Au layer, whereby the position of an electrode pad or like metallic element is easily detected mechanically and automated bonding and packaging of the field effect transistor are simplified.
Inventors
- 👤 Katsuya Kosaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10W; H10W44/00; H10W44/20; H10W72/00; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/019; H10W72/01951; H10W72/01953; H10W72/01955; H10W72/20; H10W72/251; H10W72/252; H10W72/29; H10W72/90; H10W72/921; H10W72/923
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
140 words
A method for manufacturing a semi-conductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base metal layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer and a feeder metal layer as a cathode for electrolytic plating, and a Pd activated layer; forming a second mask by depositing a second resist film on said Pd activated layer and patterning said second resist film to include an opening exposing part of said Pd activated layer; forming an amorphous conductive buffer layer in the opening in said second resist film; and forming a plated gold layer on said conductive buffer layer in the opening in said second resist film by electrolytic plating.
Claim 2
Independent Claim
140 words
A method for manufacturing a semi-conductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base metal layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer and a feeder metal layer as a cathode for electrolytic plating, and a Pd activated layer; forming a second mask by depositing a second resist film on said Pd activated layer and patterning said second resist film to include an opening exposing part of said Pd activated layer; forming an amorphous conductive buffer layer in the opening in said second resist film; and forming a plated gold layer on said conductive buffer layer in the opening in said second resist film by electrolytic plating.
Claim 3
Dependent Claim
15 words
The method of claim 1 including forming said amorphous conductive buffer layer by electroless plating.
Claim 4
Dependent Claim
14 words
The method of claim 1 including forming said amorphous conductive buffer layer by sputtering.
Claim 5
Dependent Claim
15 words
The method of claim 1 including forming said amorphous conductive buffer layer by electrolytic plating.
Claim 6
Dependent Claim
13 words
The method of claim 1 including depositing titanium as said metal adhesion layer.
Claim 7
Dependent Claim
14 words
The method of claim 1 including forming Ni-P as said amorphous conductive buffer layer.
Claim 8
Independent Claim
130 words
A method for manufacturing a semiconductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base metal layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer, an amorphous metal layer as a conductive buffer layer, and a feeder metal layer as a cathode for electrolytic plating; forming a second mask by applying a second resist film on said feeder metal layer and patterning said second resist film to include an opening exposing part of said feeder metal layer; and forming a plated gold layer on said feeder metal layer in the opening in said second resist film by electrolytic plating.
Claim 9
Independent Claim
130 words
A method for manufacturing a semiconductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base metal layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer, an amorphous metal layer as a conductive buffer layer, and a feeder metal layer as a cathode for electrolytic plating; forming a second mask by applying a second resist film on said feeder metal layer and patterning said second resist film to include an opening exposing part of said feeder metal layer; and forming a plated gold layer on said feeder metal layer in the opening in said second resist film by electrolytic plating.
Claim 10
Dependent Claim
13 words
The method of claim 7 including depositing titanium as said metal adhesion layer.
Claim 11
Dependent Claim
13 words
The method of claim 7 including forming Ni-P as said amorphous meal layer.
Claim 12
Independent Claim
138 words
A method for manufacturing a semiconductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base metal layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer and a feeder metal layer as a cathode for electrolytic plating; forming a second mask by depositing a second resist film on said feeder metal layer and patterning said second resist film to include an opening exposing part of said feeder metal layer; forming an amorphous conductive buffer layer in the opening in said second resist film by electroless plating; and forming a plated gold layer on said conductive buffer layer in the opening in said second resist film by electrolytic plating.
Claim 13
Independent Claim
138 words
A method for manufacturing a semiconductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base metal layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer and a feeder metal layer as a cathode for electrolytic plating; forming a second mask by depositing a second resist film on said feeder metal layer and patterning said second resist film to include an opening exposing part of said feeder metal layer; forming an amorphous conductive buffer layer in the opening in said second resist film by electroless plating; and forming a plated gold layer on said conductive buffer layer in the opening in said second resist film by electrolytic plating.
Claim 14
Dependent Claim
13 words
The method of claim 10 including depositing titanium as said metal adhesion layer.
Claim 15
Dependent Claim
28 words
The method of claim 10 including depositing an amorphous conductive buffer layer selected from the group consisting of Ni-P, Co-P, Fe-P, Co-Ni-P, Co-W, Fe-W, Cr-W, Fe-Mo, and Cr-Fe.
Claim 16
Independent Claim
160 words
A method for manufacturing a semiconductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer and a feeder metal layer as a cathode for electrolytic plating; forming a second mask by depositing a second resist film on said feeder metal layer and patterning said second resist film to include an opening exposing part of said feeder metal layer; forming a palladium film as a conductive buffer layer in the opening in said second resist film by immersion in a PdCl 2 solution, the palladium film having an exposed surface and a crystalline grain size at the surface no larger than 0.3 micron; and forming a plated metal layer on said palladium film in the opening in said second resist film.
Claim 17
Independent Claim
160 words
A method for manufacturing a semiconductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer and a feeder metal layer as a cathode for electrolytic plating; forming a second mask by depositing a second resist film on said feeder metal layer and patterning said second resist film to include an opening exposing part of said feeder metal layer; forming a palladium film as a conductive buffer layer in the opening in said second resist film by immersion in a PdCl 2 solution, the palladium film having an exposed surface and a crystalline grain size at the surface no larger than 0.3 micron; and forming a plated metal layer on said palladium film in the opening in said second resist film.
Claim 18
Dependent Claim
13 words
The method of claim 13 including depositing titanium as said metal adhesion layer.
Claim 19
Independent Claim
183 words
A method for manufacturing a semiconductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base metal layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer and a feeder metal layer as a cathode for electrolytic plating; depositing on said feeder metal layer a second resist film and patterning said second resist film so that a plurality of rectangular parts of said second resist film each about 1 micron square arranged in a pattern are left on said feeder metal layer; implanting ions in said feeder metal layer using said second resist film as a mask and thereafter removing said second resist film; forming a second mask by depositing a third resist film on said feeder metal layer and patterning said third resist film to include an opening exposing part of said feeder metal layer; and plating a gold layer on said feeder metal layer in the opening in said third resist film.
Claim 20
Independent Claim
183 words
A method for manufacturing a semiconductor device contact comprising: forming a first mask on a base metal layer by depositing a first resist film and patterning said first resist film to expose part of said base metal layer; sequentially depositing on said base metal layer a metal adhesion layer strongly adherent to said base metal layer and a feeder metal layer as a cathode for electrolytic plating; depositing on said feeder metal layer a second resist film and patterning said second resist film so that a plurality of rectangular parts of said second resist film each about 1 micron square arranged in a pattern are left on said feeder metal layer; implanting ions in said feeder metal layer using said second resist film as a mask and thereafter removing said second resist film; forming a second mask by depositing a third resist film on said feeder metal layer and patterning said third resist film to include an opening exposing part of said feeder metal layer; and plating a gold layer on said feeder metal layer in the opening in said third resist film.
Claim 21
Dependent Claim
21 words
The method of claim 15 wherein said feeder metal layer is gold including implanting silicon ions in said feeder metal layer.
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JPS4871975A
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JPS61163664A
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JPS62210649A
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JPS62274673A
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JPS63318145A
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GB2212516A
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EP0382298A1
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-20 | 1997-06-21 | 1997-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-20 | 2001-06-21 | 2001-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-20 | 2005-06-21 | 2005-12-21 | $7700.00 | Window Closed / Lapsed |