US5270231A
Expired / Lapsed
US
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Method of manufacturing device having ferroelectric film
Assignee: Rohm Co Ltd
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Filing: 1992-12-01
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Granted: 1993-12-14
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Expires: 2012-12-01
Abstract
Abstract A device having a ferroelectric film formed on the surface of a semiconductor substrate is manufactured. An oxide film having a window above a channel region is formed on the surface of the semiconductor substrate. The ferroelectric film is formed so as to cover the oxide film and the like. In addition, the surface of the ferroelectric film is flattened by a resist. The resist and the ferroelectric film are then etched back, to expose the oxide film. In this state, an unnecessary portion of the oxide film is selectively removed. If the oxide film is formed into a fine pattern, it is possible to form the ferroelectric film into a fine pattern.
Inventors
- 👤 Katsumi Sameshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 20:03
CPC Classifications
H; H10; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D30/00; H10D30/01; H10D30/021; H10D30/0413; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P95/00; H10P95/06
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
136 words
A method of manufacturing a device having a ferroelectric film, comprising the steps of: patterning on a substrate an underlying film, which is made of a material having a low selection ratio to said ferroelectric film in the first type of etching and having a high selection ratio to said ferroelectric film in the second type of etching, having a window in a region where said ferroelectric film is to be formed; forming said ferroelectric film so as to cover the surface of the substrate on which said underlying film is formed; forming a resist so as to flatten the surface of the ferroelectric film; etching back said resist and said ferroelectric film by said first type of etching until said underlying film is exposed; and removing said underlying film by said second type of etching.
Claim 2
Independent Claim
136 words
A method of manufacturing a device having a ferroelectric film, comprising the steps of: patterning on a substrate an underlying film, which is made of a material having a low selection ratio to said ferroelectric film in the first type of etching and having a high selection ratio to said ferroelectric film in the second type of etching, having a window in a region where said ferroelectric film is to be formed; forming said ferroelectric film so as to cover the surface of the substrate on which said underlying film is formed; forming a resist so as to flatten the surface of the ferroelectric film; etching back said resist and said ferroelectric film by said first type of etching until said underlying film is exposed; and removing said underlying film by said second type of etching.
Claim 3
Dependent Claim
21 words
The method according to claim 1, wherein said ferroelectric film is PZT, and said underlying film is a silicon oxide film.
Claim 4
Dependent Claim
33 words
The method according to claim 2, wherein said second type of etching is reactive-ion etching made under the conditions so set that the silicon oxide film is etched more easily than the PZT.
Claim 5
Dependent Claim
15 words
The method according to claim 2, wherein said first type of etching is dry etching.
Claim 6
Dependent Claim
13 words
The method according to claim 4, wherein said dry etching is ion milling.
Claim 7
Dependent Claim
15 words
The method according to claim 2, wherein said second type of etching is wet etching.
Claim 8
Dependent Claim
15 words
The method according to claim 6, wherein hydrofluoric acid is used for said wet etching.
Claim 9
Independent Claim
239 words
A method of manufacturing a semiconductor device having a ferroelectric film, comprising the steps of: forming impurity diffusion regions serving as a source and a drain on the surface of a semiconductor substrate so that the area between the impurity diffusion regions is a channel region; patterning on said semiconductor substrate an insulation film made of a material having a low selection ratio to said ferroelectric film in the first type of etching and having a high selection ratio to said ferroelectric film in the second type of etching so as to have a window above the channel region as well as to cover at least a source electrode forming position and a drain electrode forming position; forming said ferroelectric film so as to cover the surface of the semiconductor substrate on which said insulation film is formed; forming a resist so as to flatten the surface of the ferroelectric film; etching back said resist and said ferroelectric film by said first type of etching until said insulation film is exposed; forming a gate electrode on the surface of the ferroelectric film above said channel region; selectively removing the insulation film in said source electrode forming position and said drain electrode forming position by said second type of etching to form a source contact hole and a drain contact hole; forming a source electrode in said source contact hole; and forming a drain electrode in said drain contact hole.
Claim 10
Independent Claim
239 words
A method of manufacturing a semiconductor device having a ferroelectric film, comprising the steps of: forming impurity diffusion regions serving as a source and a drain on the surface of a semiconductor substrate so that the area between the impurity diffusion regions is a channel region; patterning on said semiconductor substrate an insulation film made of a material having a low selection ratio to said ferroelectric film in the first type of etching and having a high selection ratio to said ferroelectric film in the second type of etching so as to have a window above the channel region as well as to cover at least a source electrode forming position and a drain electrode forming position; forming said ferroelectric film so as to cover the surface of the semiconductor substrate on which said insulation film is formed; forming a resist so as to flatten the surface of the ferroelectric film; etching back said resist and said ferroelectric film by said first type of etching until said insulation film is exposed; forming a gate electrode on the surface of the ferroelectric film above said channel region; selectively removing the insulation film in said source electrode forming position and said drain electrode forming position by said second type of etching to form a source contact hole and a drain contact hole; forming a source electrode in said source contact hole; and forming a drain electrode in said drain contact hole.
Claim 11
Dependent Claim
44 words
The method according to claim 8, wherein in said step of selectively removing the insulation film in said source electrode forming position and said drain electrode forming position, the insulation film in portions between the gate electrode and the impurity diffusion regions is left.
Claim 12
Dependent Claim
21 words
The method according to claim 8, wherein said ferroelectric film is PZT, and said underlying film is a silicon oxide film.
Claim 13
Dependent Claim
33 words
The method according to claim 10, wherein said second type of etching is reactive-ion etching made under the conditions so set that the silicon oxide film is etched more easily than the PZT.
Claim 14
Dependent Claim
15 words
The method according to claim 10, wherein said first type of etching is dry etching.
Claim 15
Dependent Claim
13 words
The method according to claim 12, wherein said dry etching is ion milling.
Claim 16
Dependent Claim
15 words
The method according to claim 10, wherein said second type of etching is wet etching.
Claim 17
Dependent Claim
15 words
The method according to claim 14, wherein hydrofluoric acid is used for said wet etching.
References Cited (Backward Citations)
US4655874A
Cited
US5077234A
Cited
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