US5266813A
Expired / Lapsed
US
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Isolation technique for silicon germanium devices
Assignee: GlobalFoundries Inc
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Filing: 1992-01-24
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Granted: 1993-11-30
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Expires: 2012-01-24
Abstract
Abstract The present invention is an isolation structure for use with FET or bipolar devices incorporating a silicon-germanium layer in which the semiconductor devices are isolated by trench structures. A trench is etched through a pad layer, a single crystal silicon layer, a silicon-germanium layer, and finally, into the silicon substrate. The silicon-germanium layer is interposed between the single crystal silicon layer and the silicon substrate and the pad layer covers the single crystal silicon layer. The trench sidewall exposes the silicon-germanium layer. A single crystal silicon layer is formed as a trench liner. This silicon trench liner is then oxidized to passivate the trench isolation. The trench can then be filled with a dielectric without the devices being affected by parasitic leakage caused by the silicon-germanium layer exposed by the trench isolation.
Inventors
- 👤 James H. Comfort
- 👤 David L. Harame
- 👤 Scott R. Stiffler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:25
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/041; H10W10/10; H10W10/17; H10W10/40
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
51 words
A semiconductor device, comprising: a substrate having a silicon-germanium layer; said substrate having a trench formed in said substrate, said trench formed through said silicon-germanium layer and forming a sidewall in said substrate; said sidewall covered by a silicon layer wherein said silicon layer covers a surface of said silicon-germanium layer.
Claim 2
Dependent Claim
51 words
A semiconductor device, comprising: a substrate having a silicon-germanium layer; said substrate having a trench formed in said substrate, said trench formed through said silicon-germanium layer and forming a sidewall in said substrate; said sidewall covered by a silicon layer wherein said silicon layer covers a surface of said silicon-germanium layer.
Claim 3
Dependent Claim
42 words
A semiconductor device, as in claim 1, wherein: said substrate has a major surface lying substantially in a first plane, said sidewall has a major surface lying in a second plane, and said first plane is substantially perpendicular to said second plane.
Claim 4
Dependent Claim
42 words
A semiconductor device, as in claim 1, wherein: said substrate has a major surface lying substantially in a first plane, said sidewall has a major surface lying in a second plane, and said first plane is substantially non-perpendicular to said second plane.
Claim 5
Dependent Claim
22 words
A semiconductor device, as in claim 2, wherein: said substrate comprises a silicon-germanium layer interposed between first and second silicon substrate layers.
Claim 6
Dependent Claim
22 words
A semiconductor device, as in claim 3, wherein: said substrate comprises a silicon-germanium layer interposed between first and second silicon substrate layers.
Claim 7
Dependent Claim
20 words
A semiconductor device, as in claim 4, wherein: said silicon-germanium layer has a thickness between approximately 50 and 1,000 Å.
Claim 8
Dependent Claim
20 words
A semiconductor device, as in claim 5, wherein: said silicon-germanium layer has a thickness between approximately 50 and 1,000 Å.
Claim 9
Dependent Claim
61 words
A semiconductor device, comprising: a substrate having a silicon-germanium layer; said substrate having a trench formed in said substrate, said trench formed through said silicon-germanium layer and forming a sidewall in said substrate; said sidewall covered by a silicon layer having a thickness of between approximately 5 and 500 Å wherein said silicon layer covers a surface of said silicon-germanium layer.
Claim 10
Dependent Claim
61 words
A semiconductor device, comprising: a substrate having a silicon-germanium layer; said substrate having a trench formed in said substrate, said trench formed through said silicon-germanium layer and forming a sidewall in said substrate; said sidewall covered by a silicon layer having a thickness of between approximately 5 and 500 Å wherein said silicon layer covers a surface of said silicon-germanium layer.
Claim 11
Dependent Claim
42 words
A semiconductor device, as in claim 8, wherein: said substrate has a major surface lying substantially in a first plane, said sidewall has a major surface lying in a second plane, and said first plane is substantially perpendicular to said second plane.
Claim 12
Dependent Claim
42 words
A semiconductor device, as in claim 8, wherein: said substrate has a major surface lying substantially in a first plane, said sidewall has a major surface lying in a second plane, and said first plane is substantially non-perpendicular to said second plane.
Claim 13
Dependent Claim
22 words
A semiconductor device, as in claim 9, wherein: said substrate comprises a silicon-germanium layer interposed between first and second silicon substrate layers.
Claim 14
Dependent Claim
22 words
A semiconductor device, as in claim 10, wherein: said substrate comprises a silicon-germanium layer interposed between first and second silicon substrate layers.
Claim 15
Dependent Claim
20 words
A semiconductor device, as in claim 11, wherein: said silicon-germanium layer has a thickness between approximately 50 and 1,000 Å.
Claim 16
Dependent Claim
20 words
A semiconductor device, as in claim 12, wherein: said silicon-germanium layer has a thickness between approximately 50 and 1,000 Å.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-29 | 1997-05-31 | 1997-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-29 | 2001-05-31 | 2001-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-29 | 2005-05-31 | 2005-11-30 | $7700.00 | Window Closed / Lapsed |