Patent US5266116A successfully refreshed from Google Patents.
US5266116A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers
Assignee: Canon Inc
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Filing: 1992-03-27
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Granted: 1993-11-30
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Expires: 2012-03-27
Abstract
Abstract An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. A sufficiently long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semi-conductor layer of a conductivity type in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.
Inventors
- 👤 Yasushi Fujioka
- 👤 Takashi Kurokawa
- 👤 Masahiro Kanai
- 👤 Masafumi Sano
- 👤 Takehito Yoshino
- 👤 Yuzo Kohda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:48
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/507; C23C16/54; C23C16/545; Y; Y10; Y10S; Y10S438/00; Y10S438/907
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
119 words
An apparatus for continuously manufacturing a semiconductor device, comprising a plurality of glow discharge regions connected by gas gates, a sufficiently long belt-shaped substrate having a desired width arranged along a path in which said substrate sequentially penetrates said glow discharge regions, and said belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a conductivity-type semiconductor layer in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction, wherein a plurality of rotatable rollers in which a plurality of grooves were formed in the circumferential direction are disposed in a slit-shaped separating passage of said gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.
Claim 2
Independent Claim
119 words
An apparatus for continuously manufacturing a semiconductor device, comprising a plurality of glow discharge regions connected by gas gates, a sufficiently long belt-shaped substrate having a desired width arranged along a path in which said substrate sequentially penetrates said glow discharge regions, and said belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a conductivity-type semiconductor layer in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction, wherein a plurality of rotatable rollers in which a plurality of grooves were formed in the circumferential direction are disposed in a slit-shaped separating passage of said gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.
Claim 3
Dependent Claim
29 words
An apparatus according to claim 1, comprising means for allowing the belt-shaped substrate made of magnetic material to come into pressure contact with the rollers by a magnetic force.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-29 | 1997-05-31 | 1997-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-29 | 2001-05-31 | 2001-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-29 | 2005-05-31 | 2005-11-30 | $7700.00 | Window Closed / Lapsed |