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US5266116A Expired / Lapsed US ⏱️ 0.0 years remaining

Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers

Assignee: Canon Inc
•
Filing: 1992-03-27
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Granted: 1993-11-30
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Expires: 2012-03-27
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Abstract

Abstract An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. A sufficiently long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semi-conductor layer of a conductivity type in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.

Inventors

  • 👤 Yasushi Fujioka
  • 👤 Takashi Kurokawa
  • 👤 Masahiro Kanai
  • 👤 Masafumi Sano
  • 👤 Takehito Yoshino
  • 👤 Yuzo Kohda

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 04:07
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/507; C23C16/54; C23C16/545; Y; Y10; Y10S; Y10S438/00; Y10S438/907

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 119 words
An apparatus for continuously manufacturing a semiconductor device, comprising a plurality of glow discharge regions connected by gas gates, a sufficiently long belt-shaped substrate having a desired width arranged along a path in which said substrate sequentially penetrates said glow discharge regions, and said belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a conductivity-type semiconductor layer in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction, wherein a plurality of rotatable rollers in which a plurality of grooves were formed in the circumferential direction are disposed in a slit-shaped separating passage of said gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.
Claim 2
Independent Claim 119 words
An apparatus for continuously manufacturing a semiconductor device, comprising a plurality of glow discharge regions connected by gas gates, a sufficiently long belt-shaped substrate having a desired width arranged along a path in which said substrate sequentially penetrates said glow discharge regions, and said belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a conductivity-type semiconductor layer in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction, wherein a plurality of rotatable rollers in which a plurality of grooves were formed in the circumferential direction are disposed in a slit-shaped separating passage of said gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.
Claim 3
Dependent Claim 29 words
An apparatus according to claim 1, comprising means for allowing the belt-shaped substrate made of magnetic material to come into pressure contact with the rollers by a magnetic force.

References Cited (Backward Citations)

US4400409A Cited
US4462332A Cited
US4438724A Cited
US4450786A Cited
US4664951A Cited
US4763601A Cited
US4951602A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-11-29 1997-05-31 1997-11-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-11-29 2001-05-31 2001-11-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-11-29 2005-05-31 2005-11-30 $7700.00 Window Closed / Lapsed

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