Semiconductor memory

Claim 2

A semiconductor memory, comprising: a plurality of word lines; a plurality of bit lines intersecting said word lines; a memory cell array comprising memory cells arranged at respective intersections of said word lines and bit lines; word line selecting circuits for selecting said word lines in accordance with an address signal; word line driving circuits connected to said word lines for driving selected word lines; and selective stress applying means for selectively applying stress, during a stress test, to word lines in one of a plurality of word line groups into which all said word lines are classified, said selective stress applying means comprising: first MOS transistors each having a source, a drain connected to a respective one of the word lines in a first word line group, and a gate; second MOS transistors each having a source, a drain connected to a respective one of the word lines in a second word line group, and a gate; a first pad connected to the gates of all of said first and second MOS transistors for receiving a gate voltage to be applied to said gates of all of said first and second MOS transistor; a second pad connected to the sources of all of said first MOS transistors for receiving a stress voltage to be applied to said sources of all of said first MOS transistors; and a third pad connected to the sources of all of said second MOS transistors for receiving a stress voltage to be applied to said sources of all of said second MOS transistors.

Claim 3

A semiconductor memory, comprising: a plurality of word lines; a plurality of bit lines intersecting said word lines; a memory cell array comprising memory cells arranged at respective intersections of said word lines and bit lines; word line selecting circuits for selecting said word lines in accordance with an address signal; word line driving circuits connected to said word lines for driving selected word lines; and selective stress applying means for selectively applying stress, during a stress test, to word lines in one of a plurality of word line groups into which all said word lines are classified, said selective stress applying means comprising: first MOS transistors each having a source, a drain connected to a respective one of the word lines in a first word line group, and a gate; second MOS transistors each having a source, a drain connected to a respective one of the word lines in a second word line group; and a gate; a first pad connected to the gates of all of said first MOS transistors for receiving a gate voltage to be applied to said gates of all of said first MOS transistors; a second pad connected to the gates of all of said second MOS transistors for receiving a gate voltage to be applied to said gates of all of said second MOS transistors; and a third pad connected to the sources of all of said first and second MOS transistors for receiving a stress voltage to be applied to said sources of all of said first and second MOS transistors.

Claim 4

A semiconductor memory, comprising: a plurality of word lines; a plurality of bit lines intersecting said word lines; a memory cell array comprising memory cells arranged at respective intersections of said word lines and bit lines; word line selecting circuits for selecting said word lines in accordance with an address signal; word line driving circuits connected to said word lines for driving selected word lines; and selective stress applying means for selectively applying stress, during a stress test, to word lines in one of a plurality of word line groups into which all said word lines are classified, said selective stress applying means comprising: first MOS transistors each having a source, a drain connected to a respective one of the word lines in a first word line group, and a gate; second MOS transistors each having a source, a drain connected to a respective one of the word lines in a second word line group; and a gate; a first pad connected to the gates of all of said first MOS transistors for receiving a gate voltage to be applied to said gates of all of said first MOS transistors; a second pad connected to the gates of all of said second MOS transistors for receiving a gate voltage to be applied to said gates of all of said second MOS transistors; and a third pad connected to the sources of all of said first and second MOS transistors for receiving a stress voltage to be applied to said sources of all of said first and second MOS transistors.

Claim 5

A semiconductor memory, comprising: a plurality of word lines; a plurality of bit lines intersecting said word lines; a memory cell array comprising memory cells arranged at respective intersections of said word lines and bit lines; word line selecting circuits for selecting said word lines in accordance with an address signal; word line driving circuits connected to said word lines for driving selected word lines; and selective stress applying means for selectively applying stress, during a voltage stress test, to word lines in one of a plurality of word line groups into which all said word lines are classified, said selective stress applying means comprising: first MOS transistors each having a source, a drain connected to a respective one of the word lines in a first word line group, and a gate; second MOS transistors each having a source, a drain connected to a respective one of the word lines in a second word line group, and a gate; a first pad connected to the gates of all of said first MOS transistors for receiving a gate voltage to be applied to said gates of all of said first MOS transistors; a second pad connected to the sources of all of said second MOS transistors for receiving a gate voltage to be applied to said gates of all of said second MOS transistors; a third pad connected to the sources of all of said first MOS transistors for receiving a voltage to be applied to all of said sources of said first MOS transistors; and a fourth pad connected to the sources of all of said second MOS transistors for receiving a voltage to be applied to all of said sources of said second MOS transistors.

Claim 6

A semiconductor memory, comprising: a plurality of word lines; a plurality of bit lines intersecting said word lines; a memory cell array comprising memory cells arranged at respective intersections of said word lines and bit lines; word line selecting circuits for selecting said word lines in accordance with an address signal; word line driving circuits connected to said word lines for driving selected word lines; and selective stress applying means for selectively applying stress, during a voltage stress test, to word lines in one of a plurality of word line groups into which all said word lines are classified, said selective stress applying means comprising: first MOS transistors each having a source, a drain connected to a respective one of the word lines in a first word line group, and a gate; second MOS transistors each having a source, a drain connected to a respective one of the word lines in a second word line group, and a gate; a first pad connected to the gates of all of said first MOS transistors for receiving a gate voltage to be applied to said gates of all of said first MOS transistors; a second pad connected to the sources of all of said second MOS transistors for receiving a gate voltage to be applied to said gates of all of said second MOS transistors; a third pad connected to the sources of all of said first MOS transistors for receiving a voltage to be applied to all of said sources of said first MOS transistors; and a fourth pad connected to the sources of all of said second MOS transistors for receiving a voltage to be applied to all of said sources of said second MOS transistors.

Claim 7

The semiconductor memory according to any of of claims 1 to 3, wherein word lines which are physically adjacent to each other are in different groups.

Claim 8

The semiconductor memory according to any one of claims 1 to 3, wherein each word line of said first group is adjacent to another word line of said first group and one word line of said second group.

Claim 9

The semiconductor memory according to any one of claims 1 to 3, wherein the word lines of said second group are on both sides of the word lines of said first group.

Claim 10

The semiconductor memory according to any one of claims 1 to 3, wherein said word line driving circuits are connected to first ends of said word lines, and said MOS transistors are connected to second ends of said word lines.

Claim 11

The semiconductor memory according to any one of claims 1 to 3, further comprising a bit line voltage applying circuit for changing a voltage to be applied to said bit lines at the time of a normal operation and at the time of a voltage stress test.

Claim 12

The semiconductor memory according to claim 8, wherein said bit line voltage applying circuit applies a voltage which is between a power source voltage and a ground voltage to said bit lines at the time of the normal operation, and the ground voltage to said bit lines at the time of the voltage stress test.

Claim 13

A semiconductor memory, comprising: a plurality of word lines; a plurality of bit lines intersecting said word lines; a memory cell array comprising memory cells arranged at respective intersections of said word lines and bit lines; word line selecting circuits responsive to address signals for selecting said word lines; word line driving circuits connected to said word lines for driving selected word lines; and stressing circuitry for selectively stressing word lines in one or the other of a first and a second word line group during a stress test, said stressing circuitry including: a plurality of test pads; first switching elements each having a first terminal connected to a respective one of the word lines in said first word line group, a second terminal, and a control terminal; and second switching elements each having a first terminal connected to a respective one of the word lines in said second word line group, a second terminal, and a control terminal, wherein said second terminals and said control terminals of said first switching elements are connected to test pads in a first group of test pads and said second terminals and said control terminals of said second switching elements are connected to a test pads in a second group of test pads, said second group of test pads including at least one test pad not in said first group of test pads.

Claim 14

A semiconductor memory, comprising: a plurality of word lines; a plurality of bit lines intersecting said word lines; a memory cell array comprising memory cells arranged at respective intersections of said word lines and bit lines; word line selecting circuits responsive to address signals for selecting said word lines; word line driving circuits connected to said word lines for driving selected word lines; and stressing circuitry for selectively stressing word lines in one or the other of a first and a second word line group during a stress test, said stressing circuitry including: a plurality of test pads; first switching elements each having a first terminal connected to a respective one of the word lines in said first word line group, a second terminal, and a control terminal; and second switching elements each having a first terminal connected to a respective one of the word lines in said second word line group, a second terminal, and a control terminal, wherein said second terminals and said control terminals of said first switching elements are connected to test pads in a first group of test pads and said second terminals and said control terminals of said second switching elements are connected to a test pads in a second group of test pads, said second group of test pads including at least one test pad not in said first group of test pads.