US5264731A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1992-08-05
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Granted: 1993-11-23
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Expires: 2012-08-05
Abstract
Abstract A method of fabricating a semiconductor device by (1) forming a semiconductor device having electrodes on the semiconductor substrate, (2) immersing the substrate into a solution which contains a silane group surface active agent so that a monomolecular film is formed an a surface of the substrate, and (3) molding the substrate having the monomolecular film by a synthetic resin. The monomolecular film functions as a protection film for protecting the semiconductor device.
Inventors
- 👤 Hideharu Tamura
- 👤 Kazufumi Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; B; B05; B05D; B05D1/00; B05D1/18; B05D1/185; B82; B82Y; B82Y10/00; B82Y30/00; B82Y40/00; H10P14/63; H10P14/6326; H10P14/6342; H10W; H10W74/00; H10W74/40; H10W74/47; H10W74/476
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
76 words
A semiconductor device consisting essentially of a substrate having active semiconductive element(s) thereupon, on which an SiO 2 film and Al electrodes are formed, wherein the entire surface of said device is covered with a protective monomolecular or multi-monomolecular film having --CF 3 groups at the outermost surface and straight chain hydrocarbon groups and being covalently bonded to said semiconductor device via ##STR9## groups, said device molded by a synthetic resin covered over said protective film.
Claim 2
Dependent Claim
76 words
A semiconductor device consisting essentially of a substrate having active semiconductive element(s) thereupon, on which an SiO 2 film and Al electrodes are formed, wherein the entire surface of said device is covered with a protective monomolecular or multi-monomolecular film having --CF 3 groups at the outermost surface and straight chain hydrocarbon groups and being covalently bonded to said semiconductor device via ##STR9## groups, said device molded by a synthetic resin covered over said protective film.
Claim 3
Dependent Claim
30 words
A semiconductor device according to claim 1 in which the active semiconductor element(s) covered with the protective film is a bipolar transistor formed on the substrate of the semiconductor device.
Claim 4
Dependent Claim
37 words
The device of claim 1 wherein said protective monomolecular or the top layer of said multi-monomolecular film is composed of a material which contains a fluorocarbon group of the general formula: ##STR10## wherein n is an integer.
Claim 5
Dependent Claim
14 words
The device of claim 3 wherein n is an integer of 10 to 30.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-22 | 1997-05-24 | 1997-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-22 | 2001-05-24 | 2001-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-22 | 2005-05-24 | 2005-11-23 | $7700.00 | Window Closed / Lapsed |