Semiconductor memory having redundancy circuit with means to switch power from a normal memory block to a spare memory block

Claim 2

In a semiconductor memory comprising: a plurality of memory blocks including a plurality of normal memory blocks and a plurality of spare memory blocks, each memory block including a plurality of memory cells; and means for replacing a defective memory block of said plurality of normal memory blocks with one memory block of said plurality of spare memory blocks thereby remedying said defective memory block, an improvement comprising: addressing means for generating address signals for selecting said normal memory blocks; a ROM for storing the address of said defective memory block of said plurality of normal memory blocks; comparing means for comparing the output of said ROM with said address signals; first switch means associated with said plurality of normal memory blocks for permitting or inhibiting a DC voltage supply and a control signal supply to each of said plurality of normal memory blocks according to the output of said ROM and said address signals; and second switch means associated with said plurality of spare memory blocks for permitting or inhibiting a DC voltage supply and a control signal supply to each of said plurality of spare memory blocks according to the output of said ROM and the output of said comparing means, wherein each of said plurality of normal memory blocks includes a normal sense circuit for sensing a signal appearing on a data line coupled with memory cells of a corresponding normal memory block, wherein each of said plurality of spare memory blocks includes a spare sense circuit for sensing a signal appearing on a data line coupled with memory cells of a corresponding spare memory block, wherein said control signal supplied from said first switch means to a respective normal memory block drives the normal sense circuit of said respective normal memory block, and wherein said control signal supplied from said second switch means to a respective spare memory block drives the spare sense circuit of said respective spare memory block.

Claim 3

A semiconductor memory according to claim 1, wherein said first switch means associated with said normal memory blocks includes first decoding means for decoding the output of said ROM, second decoding means for decoding said address signals, and switch circuits controlled by said first and second decoding means.

Claim 4

A semiconductor memory according to claim 1, wherein said plurality of normal memory blocks and said plurality of spare memory blocks comprise at least one normal memory mat and at least one spare memory mat, respectively.

Claim 5

A semiconductor memory according to claim 1, wherein said plurality of normal memory blocks comprise plural normal memory mats each of which includes a group of normal memory blocks corresponding to a numerical subdivision of said plurality of normal memory blocks.

Claim 6

A semiconductor memory according to claim 4, wherein said plurality of spare memory blocks comprise plural spare memory mats each of which includes a group of spare memory blocks corresponding to a numerical subdivision of said plurality of spare memory blocks.

Claim 7

A semiconductor memory according to claim 4, wherein said first switch means associated with said normal memory blocks includes first decoding means for decoding the output of said ROM, second decoding means for decoding said address signals, and switch circuits controlled by said first and second decoding means.

Claim 8

A semiconductor memory according to claim 5, wherein said first switch means includes plural pairs of first switch circuits each of which is associated with a respective one of said plural normal memory mats, and wherein said second switch means includes plural pairs of second switch circuits each of which is associated with a respective one of said plural spare memory mats.

Claim 9

In a semiconductor memory comprising: a plurality of memory blocks including a plurality of normal memory blocks and a plurality of spare memory blocks, each memory block including a plurality of memory cells; and means for replacing a defective memory block of said plurality of normal memory blocks with one memory block of said plurality of spare memory blocks thereby remedying said defective memory block, an improvement comprising: addressing means for generating address signals for selecting said normal memory blocks; a ROM for storing the address of said defective memory block of said plurality of normal memory blocks; comparing means for comparing the output of said ROM with said address signals; first switch means associated with said plurality of normal memory blocks for permitting or inhibiting a DC voltage supply and a control signal supply to each of said plurality of normal memory blocks according to the output of said ROM and said address signals and second switch means associated with said plurality of spare memory blocks for permitting or inhibiting a DC voltage supply and a control signal supply to each of said plurality of spare memory blocks according to the output of said ROM and the output of said comparing means, wherein each of said plurality of normal memory blocks includes a normal sense circuit for sensing a signal appearing on a data line coupled to memory cells of a corresponding normal memory block, wherein each of said plurality of spare memory blocks includes a spare sense circuit for sensing a signal appearing on a data line coupled to memory cells of a corresponding spare memory block, wherein said control signal supplied from said first switch means to a respective normal memory block drives the normal sense circuit of said respective normal memory block, wherein said control signal supplied from said second switch means to a respective spare memory block drives the spare sense circuit of said respective spare memory block, wherein each of said memory cells is a dynamic memory cell of one transistor/one capacitor type, and wherein said first and second switch means provided for said normal and spare memory blocks, respectively, permit or inhibit at least a plate voltage supply and a data line precharge supply as said DC voltage supplies and data line precharge control signals as other control signals to the corresponding memory block.

Claim 10

In a semiconductor memory comprising: a plurality of memory blocks including a plurality of normal memory blocks and a plurality of spare memory blocks, each memory block including a plurality of memory cells; and means for replacing a defective memory block of said plurality of normal memory blocks with one memory block of said plurality of spare memory blocks thereby remedying said defective memory block, an improvement comprising: addressing means for generating address signals for selecting said normal memory blocks; a ROM for storing the address of said defective memory block of said plurality of normal memory blocks; comparing means for comparing the output of said ROM with said address signals; first switch means associated with said plurality of normal memory blocks for permitting or inhibiting a DC voltage supply and a control signal supply to each of said plurality of normal memory blocks according to the output of said ROM and said address signals and second switch means associated with said plurality of spare memory blocks for permitting or inhibiting a DC voltage supply and a control signal supply to each of said plurality of spare memory blocks according to the output of said ROM and the output of said comparing means, wherein each of said plurality of normal memory blocks includes a normal sense circuit for sensing a signal appearing on a data line coupled to memory cells of a corresponding normal memory block, wherein each of said plurality of spare memory blocks includes a spare sense circuit for sensing a signal appearing on a data line coupled to memory cells of a corresponding spare memory block, wherein said control signal supplied from said first switch means to a respective normal memory block drives the normal sense circuit of said respective normal memory block, wherein said control signal supplied from said second switch means to a respective spare memory block drives the spare sense circuit of said respective spare memory block, wherein each of said memory cells is a dynamic memory cell of one transistor/one capacitor type, and wherein said first and second switch means provided for said normal and spare memory blocks, respectively, permit or inhibit at least a plate voltage supply and a data line precharge supply as said DC voltage supplies and data line precharge control signals as other control signals to the corresponding memory block.

Claim 11

A semiconductor memory according to claim 8, wherein said first switch means associated with said normal memory blocks includes first decoding means for decoding the output of said ROM, second decoding means for decoding said address signals, and switch circuits controlled by said first and second decoding means.

Claim 12

A semiconductor memory according to claim 8, wherein said plurality of normal memory blocks and said plurality of spare memory blocks comprise at least one normal memory mat and at least one spare memory mat, respectively.

Claim 13

A semiconductor memory according to claim 8, wherein said plurality of normal memory blocks comprise plural normal memory mats each of which includes a group of normal memory blocks corresponding to a numerical subdivision of said plurality of normal memory blocks.

Claim 14

A semiconductor memory according to claim 11, wherein said plurality of spare memory blocks comprise plural spare memory mats each of which includes a group of spare memory blocks corresponding to a numerical subdivision of said plurality of spare memory blocks.

Claim 15

A semiconductor memory according to claim 12, wherein said first switch means includes plural pairs of first switch circuits each of which is associated with a respective one of said plural normal memory mats, and wherein said second switch means includes plural pairs of second switch circuits each of which is associated with a respective one of said plural spare memory mats.