Patent US5262666A successfully refreshed from Google Patents.
US5262666A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with a nickel alloy protective resistor
Assignee: Denso Corp
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Filing: 1992-02-10
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Granted: 1993-11-16
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Expires: 2012-02-10
Abstract
Abstract A semiconductor device including a substrate, a semiconductor element formed on the substrate, a terminal formed on the substrate and electrically connected to the semiconductor element, and a protective resistor formed on the substrate and electrically connected between the semiconductor element and the terminal. The resistor is composed of a ferromagnetic magnetoresistive material including Ni alloy. The device may be extended to detect magnetism by adding a magnetoresistive element composed of a ferromagnetic magnetoresistive material including the same Ni alloy as for the protective resistor and deposited at the same time. The device is superior in an anti-noise characteristic and is integrated. Furthermore, the device for detecting magnetism is formed with a lower cost.
Inventors
- 👤 Yoshimi Yoshino
- 👤 Hideto Morimoto
- 👤 Kenichi Ao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:44
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/911; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; H10B; H10B61/00; H10N; H10N59/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
146 words
A semiconductor device comprising: a substrate; a first semiconductor element provided on a first area of said substrate and including at least one part which operates using ferromagnetic magnetoresistive material; terminal means, provided on said substrate, for connection to an external device so as to pass an electrical signal through said terminal means; a second semiconductor element provided on a second area of said substrate physically separated from said first area, said second semiconductor element including protective resistor means including a ferromagnetic magnetoresistive material which is physically separated from said first semiconductor element and connected in a noise attenuation circuit for absorbing electric noise inputted from said terminal means; and conductive wiring means, provided between said first semiconductor element and said terminal means and between said second semiconductor element and said terminal means, for electrically connecting said first and second semiconductor elements with said terminal means.
Claim 2
Dependent Claim
146 words
A semiconductor device comprising: a substrate; a first semiconductor element provided on a first area of said substrate and including at least one part which operates using ferromagnetic magnetoresistive material; terminal means, provided on said substrate, for connection to an external device so as to pass an electrical signal through said terminal means; a second semiconductor element provided on a second area of said substrate physically separated from said first area, said second semiconductor element including protective resistor means including a ferromagnetic magnetoresistive material which is physically separated from said first semiconductor element and connected in a noise attenuation circuit for absorbing electric noise inputted from said terminal means; and conductive wiring means, provided between said first semiconductor element and said terminal means and between said second semiconductor element and said terminal means, for electrically connecting said first and second semiconductor elements with said terminal means.
Claim 3
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein said protective resistor means is of a material selected from the group consisting of a Ni-Fe alloy and a Ni-Co alloy.
Claim 4
Dependent Claim
35 words
A semiconductor device according to claim 2, wherein said alloy of said protective resistor means has a weight ratio of Ni to its other component in a range of from 10 to 90 wt %.
Claim 5
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said first semiconductor element includes a bipolar transistor.
Claim 6
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said conductive wiring means is composed of aluminum.
Claim 7
Dependent Claim
164 words
A semiconductor device comprising: a substrate; a magnetism detecting means, including a magnetoresistive material, provided on a first area of said substrate, for generating an electric detecting signal in response to magnetism; a semiconductor element, provided on said substrate and electrically connected with said magnetism detecting means, for processing said detecting signal; terminal means, provided on said substrate, for connection to an external device so as to pass an electric signal through said terminal means; protective resistor means including a magnetoresistive material, provided on a second area of said substrate physically separated from said first area, said protective resistor means connected in a noise attenuation circuit for absorbing electric noise inputted from said terminal means; and conductive wiring means, provided between said semiconductor element and said terminal means and between said protective resistor means and said terminal means, for electrically connecting said semiconductor element with said terminal means at a first part of said wiring means, said first part being of a non-magnetoresistive material.
Claim 8
Dependent Claim
164 words
A semiconductor device comprising: a substrate; a magnetism detecting means, including a magnetoresistive material, provided on a first area of said substrate, for generating an electric detecting signal in response to magnetism; a semiconductor element, provided on said substrate and electrically connected with said magnetism detecting means, for processing said detecting signal; terminal means, provided on said substrate, for connection to an external device so as to pass an electric signal through said terminal means; protective resistor means including a magnetoresistive material, provided on a second area of said substrate physically separated from said first area, said protective resistor means connected in a noise attenuation circuit for absorbing electric noise inputted from said terminal means; and conductive wiring means, provided between said semiconductor element and said terminal means and between said protective resistor means and said terminal means, for electrically connecting said semiconductor element with said terminal means at a first part of said wiring means, said first part being of a non-magnetoresistive material.
Claim 9
Dependent Claim
32 words
A semiconductor device according to claim 6, wherein both said magnetism detecting means and said protective resistor means are composed of at least one of a Ni-Fe alloy and a Ni-Co alloy.
Claim 10
Dependent Claim
34 words
A semiconductor device according to claim 7, wherein said protective resistor means has Ni in a weight ratio with respect to its other element in a range of from 10 to 90 wt %.
Claim 11
Dependent Claim
15 words
A semiconductor device according to claim 6, wherein said semiconductor element includes a bipolar transistor.
Claim 12
Dependent Claim
16 words
A semiconductor device according to claim 6, wherein said conductive wiring means is composed of aluminum.
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| 3.5 Years (Year 4) | 1996-11-15 | 1997-05-17 | 1997-11-16 | $2000.00 | Window Closed / Lapsed |
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