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US5262357A
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Low temperature thin films formed from nanocrystal precursors
Assignee: University of California
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Filing: 1991-11-22
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Granted: 1993-11-16
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Expires: 2011-11-22
Abstract
Abstract Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000° K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.
Inventors
- 👤 A. Paul Alivisatos
- 👤 Avery N. Goldstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 06:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/26; H10P14/265; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/2924; H10P14/3424; H10P14/3428; H10P14/3451; H10P14/3452; H10P14/3461
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
95 words
A process for forming a solid continuous thin film of a semiconductor material on a solid support surface comprising the steps of (a) depositing on the solid support surface a thin contiguous layer of nanocrystals of the semiconductor material, (b) exposing the nanocrystals to a temperature which is not greater than 250° K below the bulk melting point of the semiconductor material, which temperature nonetheless is adequate to melt the nanocrystals and cause them to fuse into a continuous thin film, and (c) cooling the continuous thin film to yield a solid continuous thin film.
Claim 2
Dependent Claim
95 words
A process for forming a solid continuous thin film of a semiconductor material on a solid support surface comprising the steps of (a) depositing on the solid support surface a thin contiguous layer of nanocrystals of the semiconductor material, (b) exposing the nanocrystals to a temperature which is not greater than 250° K below the bulk melting point of the semiconductor material, which temperature nonetheless is adequate to melt the nanocrystals and cause them to fuse into a continuous thin film, and (c) cooling the continuous thin film to yield a solid continuous thin film.
Claim 3
Dependent Claim
19 words
The process of claim 1 wherein the nanocrystals have an average diameter of from 1 to about 6 nm.
Claim 4
Dependent Claim
12 words
The process of claim 2 wherein the semiconductor is a II-VI material.
Claim 5
Dependent Claim
12 words
The process of claim 2 wherein the semiconductor is a III-V material.
Claim 6
Dependent Claim
23 words
The process of claim 2 wherein the temperature is not greater than 500° K below the bulk melting point of the semiconductor material.
Claim 7
Dependent Claim
10 words
The process of claim 2 wherein the semiconductor is GaAs.
Claim 8
Dependent Claim
10 words
The process of claim 2 wherein the semiconductor is CdS.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-15 | 1997-05-17 | 1997-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-15 | 2001-05-17 | 2001-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-15 | 2005-05-17 | 2005-11-16 | $7700.00 | Window Closed / Lapsed |